ISO9001 Certified
POWER COMPONENTS
>Suitable for General Purpose AC Switching
>Alternistor/No Snubber Versions
for Inductive Loads
>Logic Level Available for use with
Microcontrollers and Low Level Devices
>IGT Range 5-50 mA (Q1)
>V
DRM
/V
RMM
400, 600, 800, 1000V
G
A2
A1
TO-220AB Isolated
(CTA08)
TO-220AB Non-Isolated
(CTB08)
G
A2
A2
A1
G
A2
A1
Applications
• Phase Control
• Static Switching
• Light Dimming
• Motor Speed Control
• Kitchen Equipment
• Power Tools
• Solenoid Valve Controls:
• Dishwashers
• Washing Machines
GENERAL NOTES
1. Minimum IGT is guaranted at 5% of IGT max.
2. For both polarities of A2 referenced to A1
3. All parameters at 25 degrees C unless otherwise specified.
CTA/CTB08
8Amp - 400/600/800/1000V - TRIAC
Absolute Maximum Ratings
CONDITIONS SYMBOL RATING
RMS On-State Current (full sine wave) Tc = 110˚C TO-220AB IT(RMS) 8A
Tc = 100˚C TO-220AB Iso
Non Repetitive Surge Peak On-State Current F =50 Hz 80A
(Full Cycle, Tj Initial = 25˚C) F =60 Hz ITSM 84A
I2t Value for fusing tp = 10 ms I2t36A
2s
Critical rate of rise of on-state current
IG=2 x IGT, tr<100 ns, Tj = 125˚Cdi/dt 100A/µs
Peak Gate Current @ Tj = 125˚C tp = 20 µs IGM 4A
Average Gate Power Dissipation @ Tj = 125˚CP
G(AV) 1W
Storage Temperature Range Tstg -40 to +150˚C
Operating Junction Temperature Range Tj -40 to +125˚C
Isolation Voltage (CTA Series only) VISO 2500 VRMS
Electrical Characteristics
ALTERNISTOR/NO SNUBBER AND LOGIC LEVEL (3 Quadrants) TW SW CW BW
IGT MAX @ VD=12 V, RL= 30ΩNOTE 1 QI-II-III 5mA 10mA 35mA 50mA
VGT MAX @ VD=12 V, RL= 30ΩQI-II-III 1.3V 1.3V 1.3V 1.3V
VGD MIN @ VD=VDRM, RL= 3.3kΩTj = 125˚C QI-II-III 0.2V 0.2V 0.2V 0.2V
IHMAX @ IT= 500 mA NOTE 2 10mA 15mA 35mA 50mA
ILMAX @ IG= 1.2 IGT QI-III 10mA 25mA 50mA 70mA
ILMAX @ IG= 1.2 IGT Q-II 15mA 30mA 60mA 80mA
dv/dt MIN @ VD= 67%VDRM (gate open) NOTE 2 Tj = 125˚C 20V/µs 40V/µs 400V/µs 1000V/µs
(di/dt)c MIN @ (dv/dt)c = 0.1 V/ms NOTE 2 Tj = 125˚C 3.5A/ms 5.4A/ms
(di/dt)c MIN @ (dv/dt)c = 10 V/ms NOTE 2 Tj = 125˚C 1.5A/ms 2.8A/ms
(di/dt)c MIN without Snubber NOTE 2 Tj = 125˚C 4.5A/ms 7A/ms
STANDARD (4 Quadrants) C B
IGT MAX @ VD=12 V, RL= 30ΩNOTE 1 QI-II-III 25mA 50mA
IGT MAX @ VD=12 V, RL= 30ΩNOTE 1 QIV 50mA 100mA
VGT MAX @ VD=12 V, RL= 30ΩQ-All 1.3V
VGD MIN @ VD=VDRM, RL= 3.3kΩTj = 125˚C Q-All 0.2V
IHMAX @ IT= 500 mA NOTE 2 25mA 50mA
ILMAX @ IG= 1.2 IGT QI-III-IV 40mA 50mA
ILMAX @ IG= 1.2 IGT Q-II 80mA 100mA
dv/dt MIN @ VD= 67%VDRM (gate open) NOTE 2 Tj = 125˚C 200V/µs 400V/µs
(dv/dt)c MIN @ (di/dt)c = 3.5 A/ms NOTE 2 Tj = 125˚C 5V/µs 10V/µs