MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54585P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54585P and M54585FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. FEATURES A High breakdown voltage (BV CEO 50V) A High-current driving (Ic(max) = 500mA) A With clamping diodes A Driving available with TTL output or with PMOS IC output A Wide operating temperature range (Ta = -20 to +75C) PIN CONFIGURATION INPUT IN1 1 18 O1 IN2 2 17 O2 IN3 3 16 O3 IN4 4 15 O4 IN5 5 14 O5 IN6 6 13 O6 IN7 7 12 O7 IN8 8 11 O8 GND 10 COM COMMON FUNCTION The M54585P and M54585FP each have eight circuits, which are NPN Darlington transistors. Input transistors have resistance of 2.7k between the base and input pin. A spikekiller clamping diode is provided between each output pin and GND. Output transistor emitters are all connected to the GND pin. Collector current is 500mA maximum. The maximum collector-emitter voltage is 50V. The M54585FP is enclosed in a molded small flat package, enabling space-saving design. OUTPUT 9 Package type 18P4G(P) NC APPLICATION Drives of relays and printers, digit drives of indication elements such as LEDs and lamps, and MOS-bipolar logic IC interfaces INPUT 1 20 NC IN1 2 19 O1 IN2 3 18 O2 IN3 4 17 O3 IN4 5 16 O4 IN5 6 15 O5 IN6 7 14 O6 IN7 8 13 O7 IN8 9 12 O8 GND 11 COM COMMON OUTPUT 10 Package type 20P2N-A(FP) NC : No connection CIRCUIT DIAGRAM COM OUTPUT INPUT 2.7K 7.2K 3K GND The eight circuits share the COM and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54585P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE ABSOLUTE MAXIMUM RATINGS Symbol (Unless otherwise noted, Ta = -20 ~ +75 C) Parameter Conditions VCEO IC Collector-emitter voltage Collector current VI IF Input voltage Clamping diode forward current VR Pd Clamping diode reverse voltage Power dissipation Topr Operating temperature Tstg Storage temperature Ta = 25C, when mounted on board RECOMMENDED OPERATING CONDITIONS Symbol VO IC VIH "H" input voltage VIL "L" input voltage Symbol V (BR) CEO Limits typ max 0 -- 50 0 -- 400 0 -- 200 3.85 -- 3.4 0 -- -- min Duty Cycle P : no more than 6% FP : no more than 4% Duty Cycle P : no more than 34% FP : no more than 20% IC 400mA IC 200mA ELECTRICAL CHARACTERISTICS mA V 500 50 mA V 1.79(P)/1.10(FP) -20 ~ +75 W C -55 ~ +125 C Unit V 30 V 0.6 V (Unless otherwise noted, Ta = -20 ~ +75C) Parameter Test conditions VF IR Clamping diode reverse current VR = 50V h FE DC amplification factor II 500 -0.5 ~ +30 mA Collector-emitter breakdown voltage ICEO = 100A VI = 3.85V, I C = 400mA Collector-emitter saturation voltage VI = 3.4V, IC = 200mA VI = 3.85V Input current VI = 25V Clamping diode forward voltage IF = 400mA VCE (sat) Unit V (Unless otherwise noted, Ta = -20 ~ +75C) Parameter Output voltage Collector current (Current per 1 circuit when 8 circuits are coming on simultaneously) Ratings -0.5 ~ +50 Output, H Current per circuit output, L VCE = 4V, IC = 350mA, Ta = 25C Limits typ+ -- max -- -- 1.3 2.4 -- 1.0 1.6 -- -- 0.95 8.7 1.8 18 min 50 Unit V V mA -- 1.5 2.4 V -- -- 100 1000 2500 -- A -- + : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol Parameter ton Turn-on time toff Turn-off time Test conditions CL = 15pF (note 1) Limits typ max -- 12 -- ns -- 240 -- ns min Unit Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54585P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT VO 50% Measured device 50% INPUT RL OPEN OUTPUT PG OUTPUT 50 CL 50% 50% ton toff (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VI = 3.85V (2) Input-output conditions : RL = 25, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 500 2.0 VI = 3.4V Collector current Ic (mA) Power dissipation Pd (W) M54585P 1.5 M54585FP 1.0 0.5 400 300 200 Ta = 25C 100 Ta = -20C Ta = 75C 0 0 25 50 75 0 100 0 Duty-Cycle-Collector Characteristics (M54585P) 200 0 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 0 20 40 60 Duty cycle (%) 80 2.0 100 500 Collector current Ic (mA) Collector current Ic (mA) 300 100 1.5 Duty-Cycle-Collector Characteristics (M54585P) 400 1.0 Output saturation voltage VCE (sat) (V) Ambient temperature Ta (C) 500 0.5 400 300 200 100 0 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 75C 0 20 40 60 80 100 Duty cycle (%) Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54585P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE Duty-Cycle-Collector Characteristics (M54585FP) Duty-Cycle-Collector Characteristics (M54585FP) 500 500 300 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 100 0 0 20 40 60 80 Collector current Ic (mA) Collector current Ic (mA) 400 400 200 100 0 100 300 0 20 40 Duty cycle (%) Grounded Emitter Transfer Characteristics VCE = 4V Ta = 75C 3 2 103 7 Ta = -20C 5 Ta = 25C 3 Collector current Ic (mA) DC amplification factor hFE 100 5 400 300 200 Ta = 75C Ta = 25C 100 Ta =-20C 2 102 1 10 2 3 5 7 102 2 0 5 7 103 3 0 Collector current Ic (mA) 10 6 Ta = 25C 4 Ta = 75C 2 10 15 Input voltage VI (V) 20 25 Forward bias current IF (mA) Ta = -20C 5 3 4 Clamping Diode Characteristics VI = 3.4V 0 2 500 8 0 1 Input voltage VI (V) Input Characteristics Input current II (mA) 80 500 VCE = 4V 7 60 Duty cycle (%) DC Amplification Factor Collector Current Characteristics 104 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 75C 400 300 200 Ta = 25C 100 Ta = -20C Ta = 75C 0 0 0.5 1.0 1.5 2.0 Forward bias voltage VF (V) Aug. 1999