Aug. 1999
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54585P/FP
8-UNIT 500m A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54585P and M54585FP are eight-circuit Darlington tran-
sistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
FEATURES
ÁHigh breakdown voltage (BV CEO ≥ 50V)
ÁHigh-current driving (Ic(max) = 500mA)
ÁWith clamping diodes
ÁDriving available with TTL output or with PMOS IC output
ÁW ide operating temperature range (Ta = –20 to +75°C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments such as LEDs and lamps, and MOS-bipolar logic IC
interfaces
FUNCTION
The M54585P and M54585FP each have eight circuits,
which are NPN Darlington transistors. Input transistors have
resistance of 2.7kΩ between the base and input pin. A spike-
killer clamping diode is provided between each output pin
and GND. Output transistor emitters are all connected to the
GND pin.
Collector current is 500mA maximum. The maximum collec-
tor-emitter voltage is 50V.
The M54585FP is enclosed in a molded small flat package,
enabling space-saving design.
CIRCUIT DIAGRAM
7.2K
3K
2.7K
COM
GND
INPUT
OUTPUT
The diode, indicated with the dotted line, is parasitic, and cannot
be used. Unit : Ω
The eight circuits share the COM and GND.
1IN1→
IN2→
IN3→
IN4→
IN5→
IN6→
IN7→
→COM COMMON
→O8
IN8→
GND
2
3
4
5
6
7
8
9
18
17
16
15
14
13
12
11
10
→O7
→O6
→O5
→O4
→O3
→O2
→O1
1NC
IN1→
IN2→
IN3→
IN4→
IN5→
IN6→
COMMON
→O8
IN7→
IN8→
2
3
4
5
6
7
8
9
20
19
18
17
16
15
14
13
12
→COM
GND 10 11
→O7
→O6
→O5
→O4
→O2
→O3
→O1
NC
NC : No connection
Package type 18P4G(P)
INPUT OUTPUT
INPUT OUTPUT
Package type 20P2N-A(FP)
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54585P/FP
8-UNIT 500m A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75 °C)
50
—
—
—
—
—
—
1000
—
1.3
1.0
0.95
8.7
1.5
—
2500
—
2.4
1.6
1.8
18
2.4
100
—
V
V
µA
—
V
mA
VCE (sat)
II
V
mA
V
mA
V
W
°C
°C
–0.5 ~ +50
500
–0.5 ~ +30
500
50
1.79(P)/1.10(FP)
–20 ~ +75
–55 ~ +125
V
V
VO
VIL
Parameter
—
—
—
—
0
3.85
3.4
0
50
0.6
Limits
Symbol Unit
IC
VIH
0
0
—
—
400
200
30
mA
V
Symbol UnitParameter Test conditions Limits
min typ+max
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
ns
ns
ton
toff
—
—12
240 —
—
Symbol UnitParameter Test conditions Limits
min typ max
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Ratings UnitSymbol Parameter Conditions
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
min typ max
Output voltage Duty Cycle
P : no more than 6%
FP : no more than 4%
IC ≤ 400mA
IC ≤ 200mA
“H” input voltage
“L” input voltage
Collector current
(Current per 1 cir-
cuit when 8 circuits
are coming on si-
multaneously)
Duty Cycle
P : no more than 34%
FP : no more than 20%
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)
V
(BR) CEO
VF
IR
hFE
ICEO = 100µA
VI = 3.85V, IC = 400mA
VI = 3.4V, IC = 200mA
VI = 3.85V
VI = 25V
IF = 400mA
VR = 50V
VCE = 4V, IC = 350mA, Ta = 25°C
Collector-emitter breakdown voltage
Clamping diode forward voltage
Clamping diode reverse current
DC amplification factor
Collector-emitter saturation voltage
Input current
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Turn-on time
Turn-off time CL = 15pF (note 1)
Aug. 1999
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54585P/FP
8-UNIT 500m A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
ton
50% 50%
50% 50%
toff
INPUT
OUTPUT
PG
50ΩCL
OPEN
VO
RL
INPUT
OUTPUT
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω
VI = 3.85V
(2) Input-output conditions : RL = 25Ω, VO = 10V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
Measured device
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics
Ambient temperature Ta (°C)
M54585FP
M54585P
Power dissipation Pd (W)
0
0
0.5
1.0
1.5
2.0
25 50 75 100
➆
➇
Duty cycle (%)
➀
➁
➃
➄
➅
➂
Collector current Ic (mA)
Duty-Cycle-Collector Characteristics
(M54585P)
0
200
100
300
400
500
020 40 60 80 100
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE
(sat) (V)
0
500
00.5 1.0 1.5 2.0
Collector current Ic (mA)
V
I
= 3.4V
Ta = 75°C Ta = –20°C
Ta = 25°C
400
300
200
100
➅
➇
Duty cycle (%)
➀
➂
➃
➄
➁
Collector current Ic (mA)
Duty-Cycle-Collector Characteristics
(M54585P)
0
200
100
300
400
500
020 40 60 80 100
➆
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 75°C
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54585P/FP
8-UNIT 500m A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
➄
➆
➅
➇
Duty cycle (%)
➀
➁
➃
➂
Collector current Ic (mA)
Duty-Cycle-Collector Characteristics
(M54585FP)
0
200
100
300
400
500
020 40 60 80 100
Input voltage V
I
(V)
Input current I
I
(mA)
0
4
2
6
8
10
05 10152025
➄
➆
➅
➇
Duty cycle (%)
➀
➁
➃
➂
Collector current Ic (mA)
Duty-Cycle-Collector Characteristics
(M54585FP)
0
200
100
300
400
500
020 40 60 80 100
DC Amplification Factor
Collector Current Characteristics
Input Characteristics
Collector current Ic (mA)
10
1
10
3
V
CE
= 4V
Ta = 75°C
Ta = –20°C
5
3
2
7
5
3
2
7
10
4
10
3
10
2
23 57 23 57
10
2
DC amplification factor h
FE
Ta = 25°C
V
I
= 3.4V
Ta = 75°C
Ta = –20°C
Ta = 25°C
Grounded Emitter Transfer Characteristics
Input voltage V
I
(V)
0
500
01234
Collector current Ic (mA)
V
CE
= 4V
Ta =–20°C
Ta = 75°C
Ta = 25°C
400
300
200
100
Clamping Diode Characteristics
Forward bias voltage V
F
(V)
0
500
00.5 1.0 1.5 2.0
Forward bias current I
F
(mA)
Ta = 75°C Ta = –20°C
Ta = 25°C
400
300
200
100
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 75°C
