© Semiconductor Components Industries, LLC, 2013
May, 2013 Rev. 7
1Publication Order Number:
MBD301/D
MBD301G,
MMBD301LT1G,
MMBD301LT3G,
SMMBD301LT3G
Silicon Hot-Carrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for highefficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for lowcost, highvolume consumer
and industrial/commercial requirements. They are also available in a
Surface Mount package.
Features
Extremely Low Minority Carrier Lifetime 15 ps (Typ)
Very Low Capacitance 1.5 pF (Max) @ VR = 15 V
Low Reverse Leakage IR = 13 nAdc (Typ) MBD301, MMBD301
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage VR30 V
Forward Current (DC) IF200 (Max) mA
Total Device Dissipation
@ TA = 25°C
MBD301G
MMBD301LT1G, MMBD301LT3G,
SMMBD301LT3G
Derate above 25°C
MBD301G
MMBD301LT1G, MMBD301LT3G,
SMMBD301LT3G
PF
280
200
2.8
2.0
MW
mW/°C
Operating Junction
Temperature Range
TJ55 to
+125
°C
Storage Temperature Range Tstg 55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
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See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
30 VOLTS
SILICON HOTCARRIER
DETECTOR AND SWITCHING
DIODES
SOT23 (TO236)
CASE 318
STYLE 8
3
CATHODE
1
ANODE
2
CATHODE
1
ANODE
TO92 2Lead
CASE 182
STYLE 1
SOT23TO92
MARKING DIAGRAMS
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
1
4T M G
G
A = Assembly Location
Y = Year
WW = Work Week
4T = Device Code (SOT23)
M = Date Code*
G= PbFree Package
(Note: Microdot may be in either location)
MBD
301
AYWW G
G
SOT23TO92
MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R 30
V
Total Capacitance
(VR = 15 V, f = 1.0 MHz) Figure 1
CT
0.9 1.5
pF
Reverse Leakage
(VR = 25 V) Figure 3
IR
13 200
nAdc
Forward Voltage
(IF = 1.0 mAdc) Figure 4
VF
0.38 0.45
Vdc
Forward Voltage
(IF = 10 mAdc) Figure 4
VF
0.52 0.6
Vdc
ORDERING INFORMATION
Device Package Shipping
MBD301G TO92
(PbFree)
5,000 Units / Bulk
MMBD301LT1G SOT23
(PbFree)
3,000 / Tape & Reel
MMBD301LT3G SOT23
(PbFree)
10,000 / Tape & Reel
SMMBD301LT3G SOT23
(PbFree)
10,000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G
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3
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. Total Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Minority Carrier Lifetime
IF, FORWARD CURRENT (mA)
Figure 3. Reverse Leakage
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Forward Voltage
VF, FORWARD VOLTAGE (VOLTS)
, FORWARD CURRENT (mA)IF
, REVERSE LEAKAGE ( A)IRm
0.2 0.4 0.6 0.8 1.0 1.2
100
10
0 6.0 12 18 24
10
1.0
0.1
0.01
0.001
01020
500
0
0 3.0 6.0 9.0 12 15 21
1.6
3024 2718
1.2
0.8
0.4
f = 1.0 MHz
TA = -40°C
TA = 85°C
TA = 25°C
1.0
0.1
30 40 50 60 70 80 10090
KRAKAUER METHOD
0
2.8
2.4
2.0
30
TA = 100°C
75°C
25°C
, TOTAL CAPACITANCE (pF)CT
, MINORITY CARRIER LIFETIME (ps)t
400
300
200
100
SINUSOIDAL
GENERATOR
BALLAST
NETWORK
(PADS)
SAMPLING
OSCILLOSCOPE
(50 W INPUT)
PADS
CAPACITIVE
CONDUCTION
FORWARD
CONDUCTION
STORAGE
CONDUCTION
DUT
IF(PEAK)
IR(PEAK)
Figure 5. Krakauer Method of Measuring Lifetime
MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G
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4
PACKAGE DIMENSIONS
ÉÉ
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND ZONE R IS
UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
A
L
K
B
R
P
D
H
G
XX
SEATING
PLANE
12
V
N
C
N
SECTION XX
D
J
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.21
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.050 BSC 1.27 BSC
H0.100 BSC 2.54 BSC
J0.014 0.016 0.36 0.41
K0.500 --- 12.70 ---
L0.250 --- 6.35 ---
N0.080 0.105 2.03 2.66
P--- 0.050 --- 1.27
R0.115 --- 2.93 ---
V0.135 --- 3.43 ---
STYLE 1:
PIN 1. ANODE
2. CATHODE
TO92 (TO226AC)
CASE 18206
ISSUE L
MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G
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5
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AP
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10q°°°°
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different
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PUBLICATION ORDERING INFORMATION
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
MBD301/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: orderlit@onsemi.com
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a
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