To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FNA41560T2 Motion SPM 45 ® Series
April 2017
©2016 Semiconductor 1www.fairchildsemi.com
www.onsemi.com
FNA41560T2 Rev.1.0
FNA41560T2
Motion SPM® 45 Series
Features General Description
• UL Certified No. E209204 (UL1557)
• 600 V - 15 A 3-Phase IGBT Inverter with Integral Gate
Drivers and Protection
• Low Thermal Resistance Using Ceramic Substrate
• Low-Loss, Short-Circuit Rated IGBTs
• Built-In Bootstrap Diodes and De dicated Vs Pins Sim-
plify PCB Layout
• Built-In NTC Thermistor for Temperature Monitoring
• Separate Open-Emitter Pins from Low-Side IGBTs for
Three-Phase Current Sensing
• Single-Grounded Power Supply
• Isolation Rating: 2000 Vrms / min.
Applications
• Motion Control - Home Appliance / Industrial Motor
Related Resources
• AN-9084 - Smart Power Module, Motion SPM® 45 H
V3 Series User’s Guilde
• AN-9072 - Smart Power Module Motion SPM® in
SPM45H Thermal Performance Information
• AN-9071 - Smart Power Module Motion SPM® in
SPM45H Mounting Guidance
• AN-9760 - PCB Design Guidance for SPM®
FNA41560T2 is a Motion SPM® 45 module providing a
fully-featured, high-performance inverter output stage
for AC Induction, BLDC, and PMSM motors. These mod-
ules integrate optimized gate drive of the built-in IGBTs
to minimize EMI and losses, while also providing multi-
ple on-module protection features including under-volt-
age lockouts, over-current shutdown, thermal monitoring
of drive IC, and fault reporting. The built-in, high-speed
HVIC requires only a single supply voltage and trans-
lates the incoming logic-level gate inputs to the high-volt-
age, high-current drive sig nals required to properly drive
the module's internal IGBTs. Separate negative IGBT
terminals are available for each phase to support the
widest variety of control algorithms.
Package Mark ing and Ordering Information
Figure 1. 3D Package Drawing
(Click to Activate 3D Content)
Device Device Marking Package Packing Type Quantity
FNA41560T2 FNA41560T2 SPMAB-C26 Rail 12
FNA41560T2 Motion SPM 45 ® Series
©2016 Semiconductor 2www.fairchildsemi.com
www.onsemi.com
FNA41560T2 Rev.1.0
Integrated Power Functions
• 600 V - 15 A IGBT inverter for three-phase DC / AC power conversion (please refer to Figure 3)
Integrated Drive, Protection, and System Control Functions
• For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting
control circuit Under-Voltage Lock-Out Protection (UVLO)
Note: Available bootstrap circuit example is given in Figures 15.
• For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP)
control supply circuit Under-Voltage Lock-Out Protection (UVLO)
• Fault signaling: corresponding to UVLO (low-side supply) and SC faults
• Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input
Pin Configuration
Figure 2. Top View
FNA41560T2 Motion SPM 45 ® Series
©2016 Semiconductor 3www.fairchildsemi.com
www.onsemi.com
FNA41560T2 Rev.1.0
Pin Descriptions
Pin Number Pin Name Pin Description
1V
TH Thermistor Bias Voltage
2R
TH Series Resistor for the Use of Thermistor (Temperature Detection)
3 P Positive DC-Link Input
4 U Output for U-Phase
5 V Output for V-Phase
6 W Output for W-Phase
7N
UNegative DC-Link Input for U-Phase
8N
VNegative DC-Link Input for V-Phase
9N
WNegative DC-Link Input for W-Phase
10 CSC Shut Down Input for Short-circuit Current Detection Input
11 VFO Fault Output
12 IN(WL) Signal Input for Low-Side W-Phase
13 IN(VL) Signal Input for Low-Side V-Phase
14 IN(UL) Signal Input for Low-Side U-Phase
15 COM Common Supply Ground
16 VDD(L) Low-Side Common Bias Voltage for IC and IGBTs Driving
17 VDD(H) High-Side Common Bias Voltage for IC and IGBTs Driving
18 IN(WH) Signal Input for High-Side W-Phase
19 IN(VH) Signal Input for High-Side V-Phase
20 IN(UH) Signal Input for High-Side U-Phase
21 VS(W) High-Side Bias Voltage Ground for W-Phase IGBT Driving
22 VB(W) High-Side Bias Voltage for W-Phase IGBT Driving
23 VS(V) High-Side Bias Voltage Ground for V-Phase IGBT Driving
24 VB(V) High-Side Bias Voltage for V-Phase IGBT Driving
25 VS(U) High-Side Bias Voltage Ground for U-Phase IGBT Driving
26 VB(U) High-Side Bias Voltage for U-Phase IGBT Driving
FNA41560T2 Motion SPM 45 ® Series
©2016 Semiconductor 4www.fairchildsemi.com
www.onsemi.com
FNA41560T2 Rev.1.0
Internal Equivalent Circuit and Input/Output Pins
Figure 3. Internal Block Diagram
Note:
1. Inverter high-side is composed of three IGBTs, freewheeling diodes, and one control IC for each IGBT.
2. Inverter low-side is composed of three IGBTs, freewheeling diodes, and one control IC for each IGBT. It has gate drive and protection functions.
3. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals.
COM
VDD
IN(WL)
IN(VL)
IN(UL)
VFO
CSC OUT(WL)
OUT(VL)
OUT(UL)
NW(9)
NV(8)
NU(7)
W(6)
V (5)
U(4)
P (3)
(25) VS(U)
(26) VB(U)
(23) VS(V)
(24) VB(V)
(10) CSC
(11) VFO
(12) IN(WL)
(13) IN(VL)
(14) IN(UL)
(15) COM
UVB
OUT(UH)
UVS
IN(UH)
WVS
WVS
OUT(WH)
IN(WH)
COM
VDD
WVB
OUT(VH)
VVS
IN(VH)
VTH (1)
(19) IN(VH)
(20) IN(UH)
(21) VS(W)
(22) VB(W)
(17) VDD(H)
(18) IN(WH)
RTH (2)
Thermistor
UVS
VVS
VVB
(16) VDD(L)
FNA41560T2 Motion SPM 45 ® Series
©2016 Semiconductor 5www.fairchildsemi.com
www.onsemi.com
FNA41560T2 Rev.1.0
Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified.)
Inverter Part
Control Part
Bootstrap Diode Part
Total System
Thermal Resistance
Note:
4. These values had been made an acquisition by the c alculation considered to design f actor.
5. For the measurement point of case temperature (TC), please refer to Figure 2.
Symbol Parameter Conditions Rating Unit
VPN Supply Voltage Applied between P - NU, NV, NW450 V
VPN(Surge) Supply Voltage (Surge) Applied between P - NU, NV, NW500 V
VCES Collector - Emitter Voltage 600 V
± ICEach IGBT Collector Current TC = 25°C, TJ ＜150°C 15 A
± ICP Each IGBT Collector Current (Peak) TC = 25°C, TJ ＜ 150°C, Under 1 ms Pulse
Width (Note 4) 30 A
PCCollector Dissipation TC = 25°C per One Chip (Note 4) 38 W
TJOperating Junction Temperature - 40 ~ 150 °C
Symbol Parameter Conditions Rating Unit
VDD Control Supply Voltage Applied between VDD(H), VDD(L) - COM 20 V
VBS High - Side Control Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
20 V
VIN Input Signal Voltage Applied between IN(UH), IN(VH), IN(WH),
IN(UL), IN(VL), IN(WL) - COM -0.3 ~ VDD + 0.3 V
VFO Fault Output Supply Voltage Applied between VFO - COM -0.3 ~ VDD + 0.3 V
IFO Fault Output Current Sink Current at VFO pin 1 mA
VSC Current-Sensing Input Voltage Applied between CSC - COM -0.3 ~ VDD+ 0.3 V
Symbol Parameter Conditions Rating Unit
VRRM Maximum Repetitive Reverse Voltage 600 V
IFForward Current TC = 25°C, TJ ＜150°C 0.5 A
IFP Forward Current (Peak) TC = 25°C, TJ ＜ 150°C, Under 1 ms Pulse
Width (Note 4) 2.0 A
TJOperating Junction Temperature -40 ~ 150 °C
Symbol Parameter Conditions Rating Unit
VPN(PROT) Self-Protection Supply Voltage Limit
(Short-Circuit Protection Capability) VDD = VBS = 13.5 ~ 16.5 V
TJ = 150°C, Non-Repetitive, < 2 s400 V
TCModule Case Operation Temperature See Figure 2 -40 ~ 125 °C
TSTG Storage Temperature -40 ~ 125 °C
VISO Isolation Voltage 60 Hz, Sinusoidal, AC 1 Minute, Connect
Pins to Heat Sink Plate 2000 Vrms
Symbol Parameter Conditions Min. Typ. Max. Unit
Rth(j-c)Q Junction to Case Thermal Resistance
(Note 5) Inverter IGBT Part (per 1 / 6 module) - - 3.20 °C / W
Rth(j-c)F Inverter FWDi Part (per 1 / 6 module) - - 4.00 °C / W
FNA41560T2 Motion SPM 45 ® Series
©2016 Semiconductor 6www.fairchildsemi.com
www.onsemi.com
FNA41560T2 Rev.1.0
Electrical Characteristics (TJ = 25°C, unless otherwise specified.)
Inverter Part
Note:
6. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally.
For the detailed information, please see Figure 4.
Figure 4. Switching Time Definition
Symbol Parameter Conditions Min. Typ. Max. Unit
VCE(SAT) Collector - Emitter Saturation
Voltage VDD = VBS = 15 V
VIN = 5 V IC = 15 A, TJ = 25°C - 1.60 2.20 V
VFFWDi Forward Voltage VIN = 0 V IF = 15 A, TJ = 25°C - 2.00 2.60 V
HS tON Switching Times VPN = 300 V, VDD = VBS = 15 V, IC = 15 A
TJ = 25°C
VIN = 0 V 5 V, Inductive Load
(Note 6)
0.40 0.80 1.30 s
tC(ON) -0.200.50s
tOFF -0.851.35s
tC(OFF) -0.250.55s
trr -0.10- s
LS tON VPN = 300 V, VDD = VBS = 15 V, IC = 15 A
TJ = 25°C
VIN = 0 V 5 V, Inductive Load
(Note 6)
0.45 0.85 1.35 s
tC(ON) -0.250.55s
tOFF -0.901.40s
tC(OFF) -0.250.55s
trr -0.15- s
ICES Collector - Emitter Leakage
Current VCE = VCES --1mA
VCE IC
VIN
tON tC(ON)
VIN(ON)
10% IC
10% VCE
90% IC
100% IC
trr
100% IC
VCE
IC
VIN
tOFF tC(OFF)
VIN(OFF) 10% VCE 10% IC
(a ) tu rn -o n (b ) turn -o ff
FNA41560T2 Motion SPM 45 ® Series
©2016 Semiconductor 7www.fairchildsemi.com
www.onsemi.com
FNA41560T2 Rev.1.0
Figure 5. Switching Loss Characteristics (Typical)
Control Part
Note:
7. Short-circuit current protection is functioning only at the low-sides.
8. TTH is the temperature of thermistor itselt. To know case temperature (TC), please make the experiment considering your application.
Symbol Parameter Conditions Min. Typ. Max. Unit
IQDDH Quiescent VDD Supply
Current VDD(H) = 15 V, IN(UH,VH,WH) = 0 V VDD(H) - COM - - 0.10 mA
IQDDL VDD(L) = 15 V, IN(UL,VL, WL) = 0 V VDD(L) - COM - - 2.65 mA
IPDDH Operating VDD Supply
Current VDD(H) = 15 V, fPWM = 20 kHz, duty
= 50%, Applied to One PWM Sig-
nal Input for High-Side
VDD(H) - COM - - 0.15 mA
IPDDL VDD(L) = 15 V, fPWM = 20 kHz, duty
= 50%, Applied to One PWM Sig-
nal Input for Low-Side
VDD(L) - COM - - 4.00 mA
IQBS Quiescent VBS Supply
Current VBS = 15 V, IN(UH, VH, WH) = 0 V VB(U) - VS(U), VB(V) -
VS(V), VB(W) - VS(W)
- - 0.30 mA
IPBS Operating VBS Supply
Current VDD = VBS = 15 V, fPWM = 20 kHz,
Duty = 50%, Applied to One PWM
Signal Input for High-Side
VB(U) - VS(U), VB(V) -
VS(V), VB(W) - VS(W)
- - 2.00 mA
VFOH Fault Output Voltage VSC = 0 V, VFO Circuit: 4.7 k to 5 V Pull-up 4.5 - - V
VFOL VSC = 1 V, VFO Circuit: 4.7 k to 5 V Pull-up - - 0.5 V
VSC(ref) Short Circuit Trip Level VDD = 15 V (Note 7) CSC - COM 0.450.500.55 V
UVDDD Supply Circuit
Under-Voltage
Protection
Detection level 10.5 - 13.0 V
UVDDR Reset level 11.0 - 13.5 V
UVBSD Detection level 10.0 - 12.5 V
UVBSR Reset level 10.5 - 13.0 V
tFOD Fault-Out Pulse Width 30 - - s
VIN(ON) ON Threshold Voltage Applied between IN(UH, VH, WH) - COM,
IN(UL, VL, WL) - COM --2.6V
VIN(OFF) OFF Threshold Voltage 0.8 - - V
RTH Resistance of
Thermistor @TTH = 25°C, (Note 8) - 47 - k
@TTH = 100°C - 2.9 - k
0 5 10 15
0
200
400
600
800
1000
1200
1400
SWITCHING LOSS ESW [uJ]
COLLECTOR CURRENT, IC [AMPERES]
IGBT Turn-on, Eon
IGBT Tu rn- off, Eo ff
FRD Turn-off, Erec
Inductive Load, V PN = 300V, VDD=15V, TJ=25℃
0 5 10 15
0
200
400
600
800
1000
1200
1400
Inductive Load, VPN = 300V, VDD=15V, TJ=150℃
SWITCHING LOSS ESW [uJ]
COLLECTOR CURR ENT, IC [AMPERES]
IGBT Turn-on, Eon
IGBT Tu rn- off, Eoff
FRD Turn-off, Er e c
FNA41560T2 Motion SPM 45 ® Series
©2016 Semiconductor 8www.fairchildsemi.com
www.onsemi.com
FNA41560T2 Rev.1.0
Figure. 6. R-T Curve of The Built-In Thermistor
Bootstrap Diode Part
Figure 7. Built-In Bootstrap Diode Characteristic
Note:
9. Built-in bootstrap diode inclu des around 15 Ω resistance characteristic.
Symbol Parameter Conditions Min. Typ. Max. Unit
VFForward Voltage IF = 0.1 A, TC = 25°C - 2.5 - V
trr Reverse-Recovery Time IF = 0.1 A, dIF / dt = 50 A / s, TJ = 25°C - 80 - ns
-20-100 102030405060708090100110120
0
50
100
150
200
250
300
350
400
450
500
550
600 R-T Curve
Resistance[k]
Temperature TTH[]℃
50 60 70 80 90 100 110 120
0
4
8
12
16
20
Resistance[k]
Temperature [ ]℃
R-T Curve in 50 ~ 125℃℃
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0 Built-In Bootstrap Diode VF-IF C haracteristic
TC=25oC
IF [A]
VF [V]
FNA41560T2 Motion SPM 45 ® Series
©2016 Semiconductor 9www.fairchildsemi.com
www.onsemi.com
FNA41560T2 Rev.1.0
Recommended Operating Conditions
Note:
10. This product might not make response if input pulse width is less than the recommanded value.
Figure 8. Allowable Maximum Output Current
Note:
11. This allowable output current value is the reference data for the safe operation of this product. This may be different from the actual ap plication and operating condition.
Symbol Parameter Conditions Min. Typ. Max. Unit
VPN Supply Voltage Applied between P - NU, NV, NW- 300 400 V
VDD Control Supply Voltage Applied between VDD(H), VDD(L) - COM 13.5 15.0 16.5 V
VBS High-Side Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) -
VS(W)
13.0 15.0 18.5 V
dVDD / d t,
dVBS / dt Control Supply Variation -1 - 1 V / s
tdead Blanking Time for
Preventing Arm-Short For each input signal 1 - - s
fPWM PWM Input Signal -40C TC 125°C, -40C TJ 150°C - - 20 kHz
VSEN Voltage for Current
Sensing Applied between NU, NV, NW - COM
(Including Surge-Voltage) -4 4 V
PWIN(ON) Minimum Input Pulse
Width VDD = VBS = 15 V, IC 30 A, Wiring Inductance
between NU, V, W and DC Link N < 10nH (Note 10) 1.2 - - s
PWIN(OFF) 1.2 - -
TJJunction Temperature - 40 - 150 C
0 20406080100120140
0
3
6
9
12
15
VDC = 300 V, VDD = VBS = 15 V
Tj = 150℃ , TC = 125℃
M.I. = 0.9, P.F. = 0.8
Sinusoidal PWM
fSW = 15 kHz
fSW = 5 kHz
Allowable Output Current, IOrms [Arms]
Case Temperatu re, TC [℃]
FNA41560T2 Motion SPM 45 ® Series
©2016 Semiconductor 10 www.fairchildsemi.com
www.onsemi.com
FNA41560T2 Rev.1.0
Mechanical Characteristics and Ratings
Figure 9. Flatness Measurement Position
Figure 10. Mounting Screws Tor que Order
Note:
12. Do not make over torque when mounting screws. Much mounting torqu e may cause ceramic cracks, as well as bolts and Al heat-sink destruction.
13. Av oid one -sid ed ti ghten ing stress. Figure 1 0 show s the recom mende d tor que or der fo r mo unti ng scre ws. Une ven m ounti ng can cause the ceramic su bstrate o f p ackage to be
damaged. The pre-screwing torque is set to 20 ~ 30% of maximum torque rating.
Parameter Conditions Min. Typ. Max. Unit
Device Flatness See Figure 9 0-+ 120m
Mounting Torque Mounting Screw: M3
See Figure 10
Recommended 0.7 N • m 0.6 0.7 0.8 N • m
Recommended 7.1 kg • cm 6.2 7.1 8.1 kg • cm
Weight - 11.00 - g
1
2
Pre - Screwing : 1→2
Final Screwing : 2→1
1
2
Pre - Screwing : 1→2
Final Screwing : 2→1
FNA41560T2 Motion SPM 45 ® Series
©2016 Semiconductor 11 www.fairchildsemi.com
www.onsemi.com
FNA41560T2 Rev.1.0
Time Charts of Protective Function
Figure 11. Under-Voltage Protection (Low-Side)
a1 : Control supply voltage rises: After the voltage rises UVDDR, the circuits start to operate when next input is applied.
a2 : Normal operation: IGBT ON and carrying current.
a3 : Under voltage detection (UVDDD).
a4 : IGBT OFF in spite of control input condition.
a5 : Fault output operation starts with a fixed pulse width.
a6 : Under voltage reset (UVDDR).
a7 : Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH.
Figure 12. Under-Voltage Protection (High-Side)
b1 : Control supply voltage rises: After the voltage reaches UVBSR, the circuits start to operate when next input is applied.
b2 : Normal operation: IGBT ON and carrying current.
b3 : Under voltage detection (UVBSD).
b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.
b5 : Under voltage reset (UVBSR).
b6 : Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH.
Input Signal
Output Current
Fault Output Signal
Control
Supply Voltage
RESET
UVDDR
Protection
Circuit State SET RESET
UVDDD
a1 a3
a2 a4
a6
a5
a7
Input Signal
Output Current
Fault Output Signal
Control
Supply Voltage
RESET
UVBSR
Protection
Circuit State SET RESET
UVBSD
b1 b3
b2 b4 b6
b5
High-level (no fault output)
FNA41560T2 Motion SPM 45 ® Series
©2016 Semiconductor 12 www.fairchildsemi.com
www.onsemi.com
FNA41560T2 Rev.1.0
Figure 13. Short-Circuit Protection (Low-Side Operatio n Only)
(with the external sense resistance and RC filter connection)
c1 : Normal operation: IGBT ON and carrying current.
c2 : Short circuit current detection (SC trigger).
c3 : All low-side IGBT’s gate are hard interrupted.
c4 : All low-side IGBTs turn OFF.
c5 : Fault output operation starts with a fixed pulse width.
c6 : Input HIGH: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON.
c7 : Fault output operation finishes, but IGBT doesn’t turn on until triggering next signal from LOW to HIGH.
c8 : Normal operation: IGBT ON and carrying current.
Input/Output Interface Circuit
Figure 14. Recommended MCU I/O Interface Circuit
Note:
14. RC coupling at each input might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s print ed circuit board.
The input signal section of the Motion SPM 45 product integrates 5 k(typ.) pull-down re sis tor. Therefore , wh en u sin g an ex ternal filtering resistor, please pay attention to the
signal voltage drop at input terminal.
Lower Arms
Control Input
Output Current
Sensing Voltage
of Shunt Resistance
Fault Output Signal
SC Reference Voltage
CR Circuit Time
Constant Delay
SC
Protection
Circuit State SET RESET
c6 c7
c3
c2
c1
c8
c4
c5
Internal IGBT
Gate - Emitter Voltage
MCU
COM
+5 V (for MCU or Control power)
,,
IN(UL) IN(VL) IN(WL)
,,
IN(UH) IN(VH) IN(WH)
VFO
RPF = 10 kΩSPM
FNA41560T2 Motion SPM 45 ® Series
©2016 Semiconductor 13 www.fairchildsemi.com
www.onsemi.com
FNA41560T2 Rev.1.0
Figure 15. Typical Application Circuit
Note:
15. To avoid malfunction, the wiring of each input should be as short as possible (less than 2 - 3 cm).
16. VFO output is open-drain type. This signal line shou ld be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 1 mA.
17. CSP15 of around seven times larger than bootstrap capacitor CBS is recommended.
18. Input signal is active-HIGH type. The re is a 5 k resistor inside the IC to pull down each input signal line to GND. RC coupling circuits is recommanded for the prevention of
input signal oscillation. RSCPS time constant should be selected in the range 50 ~ 150 ns (recommended R S = 100 Ω, CPS = 1 nF).
19. To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible.
20. In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5 ~ 2 s. Do enough evaluaiton on the real system because short-circuit protection
time may vary wiring pattern layout and value of the RFCSC time constant.
21. The connection between control GND line and power GND line which includes the NU, NV, NW must be connected to only one point. Please do not connect the control GND
to the power GND by the broad pattern. Also, the wiring distance between control GND and power GND should be as short as possible.
22. Each capacitor should be mounted as close to the pins of th e Motion SPM 45 product as possible.
23. To prevent surge destr uction, the wiring between the smoothing capacitor and the P & GND pins should be as short as possible. The use of a high-frequency non-inductive
capacitor of around 0.1 ~ 0.22 F between the P and GND pins is recommended.
24. Relays are used in almost every systems of electrical equipment in home appliances. In these cases, there should be sufficient distance between the MCU and the relays.
25. The zener diode or transient voltage suppressor should be adopted for the protection of ICs from the surge destruction between each pair of control supply terminals
(recommanded zener diode is 22 V / 1 W, which has the lower zener impedance characteristic than about 15Ω).
26. Please choose the electrolytic capacitor with good temperature characteristic in CBS. Also, choose 0.1 ~ 0.2 F R-category ceramic capa citors with good temperature and
frequency characteristics in CBSC.
Fault
+15 V
CBS CBSC
CBS CBSC
CBS CBSC
CSP15 CSPC15
RPF
CBPF
RS
M
VDC
CDCS
Gating UH
Gating VH
Gating WH
Gating UL
Gating VL
Gating WL
CPF
M
C
U
RSW
RSV
RSU
U-Phase Current
V-Phase Current
W-Phase C urrent
RF
COM
VDD
IN(WL)
IN(VL)
IN(UL)
VFO
CSC
OUT(WL)
OUT(VL)
OUT(UL)
NW(9)
NV(8)
NU(7)
W (6)
V (5)
U (4)
P (3)
(25) VS(U)
(26) VB(U)
(23) VS(V)
(24) VB(V)
(10) CSC
(11) VFO
(14) IN(UL)
(13) IN(VL)
(12) IN(WL)
(20) IN(UH)
(19) IN(VH)
(21) VS(W)
(22) VB(W)
(17) VDD(H)
(18) IN(WH)
Input Signal for
Short-Circuit Protection
CSC
RS
RS
RS
RS
RS
RS
CPS
CPS
CPS
CPS
CPS CPS
IN(WH)
IN(VH)
IN(UH)
COM
VDD
VS(W)
VS(V)
VS(U)
VS(V)
VS(U)
VS(W)
VB(U)
VB(V)
VB(W)
(15) CO M
OUT(WH)
OUT(VH)
OUT(UH)
LVIC
HVIC
(1) VTH
(2) RTH
RTH THERMISTOR
Temp. Monitoring
(16) VDD(L)
+5 V
CSPC05 CSP05
FNA41560T2 Motion SPM 45 ® Series
©2016 Semiconductor 14 www.fairchildsemi.com
www.onsemi.com
FNA41560T2 Rev.1.0
Detailed Package Outline Drawings (FNA41560T2)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide therm and conditions,
specifically the the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor ’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MO/MOD26AA.pdf
©2016 Semiconductor 15 www.fairchildsemi.com
www.onsemi.com
FNA41560T2 Rev.1.0
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the
United States and/or other countries. ON Semiconductor owns the rights to a number of patents, tr ademarks, copyrights, trade secrets, and other intellectual property. A
listing of ON Semi cond uctor’s p rodu ct/pate nt cover age may be accessed a t www. onsemi. com/site /pdf/Pa tent- Marki ng.pdf . ON Semi conductor rese rves the right to make
changes withou t fur th er n otice to any products herein. ON Se m ico nd ucto r make s n o w a rr a nty, r epre s ent ation or guarantee regarding the suitab ility of its products for any
particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and
all li ability, including without limitation special, consequential or inci dental damages. Buyer is responsible for its products and applications using ON Semiconductor
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by
ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different appli cations and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
ON Semicondu ctor d oe s no t convey any license under it s pa tent rights nor the right s of others. ON Semiconductor pr o ducts are not designed, intended, or a uth or ized fo r
use as a critical component in life supp ort syst ems or an y FDA Class 3 med i cal de vices or medi cal devices with a same or similar classification in a foreign jurisdiction or
any devic es i nt end ed f or im pla n tat ion i n th e hu man bo dy. S hou ld Buy e r pur c has e or use ON Se mic ond uct o r p rodu c ts for a ny s uc h unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs,
damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or
unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
N. American T echnical Support: 800-282-9855 Toll Free
USA/Canada.
Europe, Middle East and Africa Technica l Su pport:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81-3-5817-1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
