GU-E PhotoMOS (AQW21PEH) TESTING General use and economy type. DIP (2 Form A) 8-pin type. Reinforced insulation 5,000V type. FEATURES 6.4 .252 9.86 .388 GU-E PhotoMOS (AQW21PEH) 3.2 .126 6.4 .252 9.86 .388 2.9 .114 mm inch 1 8 2 7 3 6 4 5 1. Reinforced insulation 5,000 V type More than 0.4 mm internal insulation distance between inputs and outputs. Con-forms to EN41003, EN60950 (reinforced insulation). 2. Compact 8-pin DIP size The device comes in a compact (W)6.4x(L)9.86x(H)3.2 mm (W).252x(L).388x(H).126 inch, 8-pin DIP size (through hole terminal type). 3. Applicable for 2 Form A use as well as two independent 1 Form A use 4. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion. 5. High sensitivity, high speed response. Can control a maximum 0.14 A load current with a 5 mA input current. Fast operation speed of 0.5 ms (typical). (AQW210EH) 6. Low-level off state leakage current TYPICAL APPLICATIONS * Modem * Telephone equipment * Security equipment * Sensors TYPES Part No. Output rating* Type AC/DC type I/O isolation voltage Reinforced 5,000 V Load voltage Load current Through hole terminal Packing quantity Surface-mount terminal Tape and reel packing style Tube packing style Tube Tape and reel 1 tube contains 40 pcs. 1 batch contains 400 pcs. 1,000 pcs. Picked from the Picked from the 1/2/3/4-pin side 5/6/7/8-pin side 60 V 500 mA AQW212EH AQW212EHA AQW212EHAX AQW212EHAZ 350 V 120 mA AQW210EH AQW210EHA AQW210EHAX AQW210EHAZ 400 V 100 mA AQW214EH AQW214EHA AQW214EHAX AQW214EHAZ 600 V 40 mA AQW216EH AQW216EHA AQW216EHAX AQW216EHAZ *Indicate the peak AC and DC values. Note: For space reasons, the SMD terminal shape indicator "A" and the package style indicator "X" or "Z" are not marked on the relay. RATING 1. Absolute maximum ratings (Ambient temperature: 25C 77F) Item Input Output Symbol AQW212EH(A) AQW210EH(A) AQW214EH(A) AQW216EH(A) LED forward current IF 50mA LED reverse voltage VR 5V Peak forward current IFP 1A Power dissipation Pin Load voltage (peak AC) VL 60 V 350 V 400 V 600 V Continuous load current (peak AC) IL 0.5 A (0.6 A) 0.12 A (0.14 A) 0.1 A (0.13 A) 0.04 A (0.05 A) Peak load current Ipeak 1.5 A 0.36 A 0.3 A 0.15 A Power dissipation Pout f =100 Hz, Duty factor = 0.1% 75mW PT 850mW I/O isolation voltage Viso 5,000 V AC Operating Topr -40C to +85C -40F to +185F Storage Tstg -40C to +100C -40F to +212F ds_x615_en_aqw21eh: 181206J Peak AC, DC ( ): in case of using only 1 channel 100 ms (1 shot), VL= DC 800mW Total power dissipation Temperature limits Remarks Non-condensing at low temperatures 1 GU-E PhotoMOS (AQW21PEH) 2. Electrical characteristics (Ambient temperature: 25C 77F) Item LED operate current Input Symbol AQW212EH(A) Typical Maximum LED turn off current Minimum LED dropout voltage Typical Typical Maximum IFon Off state leakage current Turn on time* Transfer characteristics Turn off time* I/O capacitance AQW216EH(A) 0.4mA IFoff IL=Max. 1.1mA 1.25 V (1.14 V at IF=5mA) VF IF=50mA 1.5V 0.83 18 26 52 2.5 25 35 120 IF=5mA IL=Max. Within 1 s on time Ron Maximum Typical Maximum Typical Maximum Typical Maximum Initial I/O isolation Minimum resistance ILeak IF=0mA VL=Max. 1A Ton 1ms 0.5ms 4ms 2.0ms IF=5mA IL=Max. 0.08ms Toff 0.04ms IF=5mA IL=Max. 1.0ms 0.8pF 1.5pF f =1MHz VB =0V 1,000M 500V DC Ciso Riso Condition IL=Max. 3.0mA Maximum Output AQW214EH(A) 1.2mA Typical On resistance AQW210EH(A) Note: Recommendable LED forward current IF= 5 to 10mA. Type of connection *Turn on/Turn off time Input 90% Output 10% Ton Toff Q Dimensions Q Schematic and Wiring Diagrams Q Cautions for Use REFERENCE DATA 1-(1). Load current vs. ambient temperature characteristics 1-(2). Load current vs. ambient temperature characteristics 1-(3). Load current vs. ambient temperature characteristics Allowable ambient temperature: -20C to +85C -4F to +185F Allowable ambient temperature: -40C to +85C -40F to +185F Allowable ambient temperature: -40C to +85C -40F to +185F AQW210EH AQW214EH (using only 1 channel) (using only 1 channel) 100 AQW214EH (using 2 channels) AQW210EH (using 2 channels) 50 0.7 0.6 0.07 0.06 AQW212EH (using only 1 channel) 0.5 0.4 Load current, mA 150 0.8 Load current, mA Load current, mA 200 AQW212EH (using 2 channels) 0.3 2 -20 0 20 40 60 8085 100 Ambient temperature, C 0 -40 AQW216EH (using only 1 channel) 0.04 AQW216EH (using 2 channels) 0.03 0.02 0.2 0.01 0.1 0 -40 0.05 -20 0 20 40 60 80 85 100 Ambient temperature, C 0 -40 -20 0 20 40 60 80 85 100 Ambient temperature, C ds_x615_en_aqw21eh: 181206J GU-E PhotoMOS (AQW21PEH) 2-(1). On resistance vs. ambient temperature characteristics 2-(2). On resistance vs. ambient temperature characteristics 2-(3). On resistance vs. ambient temperature characteristics Measured portion: between terminals 5 and 6, 7 and 8; LED current: 5 mA; Load voltage: Max. (DC); Continuous load current: Max. (DC) Measured portion: between terminals 5 and 6, 7 and 8; LED current: 5 mA; Load voltage: Max. (DC); Continuous load current: Max. (DC) Measured portion: between terminals 5 and 6, 7 and 8; LED current: 5 mA; Load voltage: Max. (DC); Continuous load current: Max. (DC) AQW214EH 30 AQW210EH 20 1.5 On resistance, 40 AQW212EH 1 0.5 10 0 100 2 On resistance, On resistance, 50 -40 -20 0 20 40 60 0 8085 80 60 AQW216EH 40 20 -40 -20 Ambient temperature, C 0 20 40 60 0 80 85 -40 -20 Ambient temperature,C 0 20 40 60 4. Turn off time vs. ambient temperature characteristics 5. LED operate current vs. ambient temperature characteristics Sample: All types LED current: 5 mA; Load voltage: Max. (DC); Continuous load current: Max. (DC) Sample: All types LED current: 5 mA; Load voltage: Max. (DC); Continuous load current: Max. (DC) Sample: All types; Load voltage: Max. (DC); Continuous load current: Max. (DC) 2.5 0.25 2 1.5 AQW212EH AQW210EH AQW214EH 1 -20 0 0.15 AQW212EH AQW210EH AQW214EH 20 40 60 4 3 2 1 0.05 AQW216EH -40 0.2 0.1 0.5 0 5 LED operate current, mA 0.3 Turn off time, ms Turn on time, ms 3. Turn on time vs. ambient temperature characteristics 3 80 85 Ambient temperature, C AQW216EH 0 8085 -40 -20 Ambient temperature, C 0 20 40 60 0 80 85 -40 -20 Ambient temperature, C 0 20 40 60 8085 Ambient temperature, C 6. LED turn off current vs. ambient temperature characteristics 7. LED dropout voltage vs. ambient temperature characteristics 8-(1). Current vs. voltage characteristics of output at MOS portion Sample: All types; Load voltage: Max. (DC); Continuous load current: Max. (DC) Sample: All types; LED current: 5 to 50 mA Measured portion: between terminals 5 and 6, 7 and 8; Ambient temperature: 25C 77F 4 3 2 1 0 1.4 1.3 -5 -4 1.2 50mA 30mA 20mA 10mA 5mA 1.1 1.0 -40 -20 0 20 40 60 8085 Ambient temperature, C 0 140 120 100 80 60 40 20 -3 -2 -1 Current, mA 1.5 LED dropout voltage, V LED turn off current, mA 5 -40 -20 0 20 40 60 8085 Ambient temperature, C AQW214EH 1 -20 -40 -60 -80 -100 -120 AQW210EH -140 2 3 4 Voltage, V 5 8-(2). Current vs. voltage characteristics of output at MOS portion 8-(3). Current vs. voltage characteristics of output at MOS portion 9-(1). Off state leakage current vs. load voltage characteristics Measured portion: between terminals 3 and 4; Ambient temperature: 25C 77F Measured portion: between terminals 3 and 4; Ambient temperature: 25C 77F Measured portion: between terminals 5 and 6, 7 and 8; Ambient temperature: 25C 77F 0.4 0.2 AQW212EH -1 -0.5 0 0 0.5 Voltage, V -0.2 1 -6 -4 -2 0.06 0.04 0.02 0 AQW216EH 2 4 6 Voltage, V -0.02 0 Off state leakage current, A 0.08 Current, A Current, A 0.6 10-3 10-6 10-9 AQW214EH -0.04 -0.4 -0.6 -0.06 -0.08 AQW210EH 10-12 0 20 40 60 80 100 Load voltage, V ds_x615_en_aqw21eh: 181206J 3 GU-E PhotoMOS (AQW21PEH) 9-(2). Off state leakage current vs. load voltage characteristics 10. Turn on time vs. LED forward current characteristics 11. Turn off time vs. LED forward current characteristics Measured portion: between terminals 5 and 6, 7 and 8; Ambient temperature: 25C 77F Sample: All types Measured portion: between terminals 5 and 6, 7 and 8; Load voltage: Max. (DC); Continuous load current: Max. (DC); Ambient temperature: 25C 77F Sample: All types Measured portion: between terminals 5 and 6, 7 and 8; Load voltage: Max. (DC); Continuous load current: Max. (DC); Ambient temperature: 25C 77F 3 0.2 10-7 10-9 10 -11 10-13 0 20 2 AQW210EH AQW214EH 1.5 AQW216EH 1 AQW212EH 0.5 40 60 80 Load voltage, V AQW212EH AQW216EH 10 20 30 40 50 60 12-(1). Output capacitance vs. applied voltage characteristics 12-(2). Output capacitance vs. applied voltage characteristics Measured portion: between terminals 5 and 6, 7 and 8; Frequency: 1 MHz; Ambient temperature: 25C 77F Measured portion: between terminals 5 and 6, 7 and 8; Frequency: 1 MHz; Ambient temperature: 25C 77F Output capacitance, pF Output capacitance, pF 30 20 0 0 10 20 30 40 50 60 0 AQW216EH 10 20 30 150 100 50 AQW210EH AQW214EH 10 40 Applied voltage, V 4 AQW212EH 0.05 200 40 0 AQW210EH AQW214EH 0.1 LED forward current, mA LED forward current, mA 50 0.15 AQW216EH 0 100 Turn off time, ms 2.5 10-5 Turn on time, ms Off state leakage current, A 10-3 50 0 AQW212EH 0 5 10 15 20 25 30 Applied voltage, V ds_x615_en_aqw21eh: 181206J