AQW212EHA - PANASONIC ELECTRIC WORKS

GU-E PhotoMOS (AQW21PEH)

ds_x615_en_aqw21eh: 181206J

TYPES

*Indicate the peak AC and DC values.

Note: For space reasons, the SMD terminal shape indicator “A” and the package style indicator “X” or “Z” are not marked on the relay.

RATING

1. Absolute maximum ratings (Ambient temperature: 25°C 77°F)

General use and economy type.

DIP (2 Form A) 8-pin type.

Reinforced insulation

5,000V type.

GU-E PhotoMOS

(AQW21PEH)

Type I/O isolation

voltage

Output rating* Part No. Packing quantity

Through hole

terminal Surface-mount terminal

Load

voltage Load

current Tube packing style Tape and reel packing style Tube Tape and

reel

Picked from the

1/2/3/4-pin side Picked from the

5/6/7/8-pin side

AC/DC

type Reinforced

5,000 V

60 V 500 mA AQW212EH AQW212EHA AQW212EHAX AQW212EHAZ 1 tube contains

40 pcs.

1 batch contains

400 pcs. 1,000 pcs.

350 V 120 mA AQW210EH AQW210EHA AQW210EHAX AQW210EHAZ

400 V 100 mA AQW214EH AQW214EHA AQW214EHAX AQW214EHAZ

600 V 40 mA AQW216EH AQW216EHA AQW216EHAX AQW216EHAZ

Item Symbol AQW212EH(A) AQW210EH(A) AQW214EH(A) AQW216EH(A) Remarks

Input

LED forward current IF50mA

LED reverse voltage VR5V

Peak forward current IFP 1A f =100 Hz,

Duty factor = 0.1%

Power dissipation Pin 75mW

Output

Load voltage (peak AC) VL60 V 350 V 400 V 600 V

Continuous load current

(peak AC) IL0.5 A

(0.6 A) 0.12 A

(0.14 A) 0.1 A

(0.13 A) 0.04 A

(0.05 A) Peak AC, DC

( ): in case of using

only 1 channel

Peak load current Ipeak 1.5 A 0.36 A 0.3 A 0.15 A 100 ms (1 shot),

VL= DC

Power dissipation Pout 800mW

Total power dissipation PT850mW

I/O isolation voltage Viso 5,000 V AC

Temperature

limits Operating Topr –40°C to +85°C –40°F to +185°FNon-condensing at

low temperatures

Storage Tstg –40°C to +100°C –40°F to +212°F

TESTING

mm inch

3.2

6.4

9.86

2.9

6.4

9.86

.126

.252

.388

.114

.252

.388

FEATURES

1. Reinforced insulation 5,000 V type

More than 0. 4 mm inte rnal insulation

distance between inputs and outputs.

Con-forms to EN41003, EN60950

(reinforced insulation).

2. Compact 8-pin DIP size

The device comes in a compact

(W)6.4×(L)9.86×(H)3.2 mm

(W).252×(L).388×(H).126 inch, 8-pin DIP

size (through hole terminal type).

3. Applicable for 2 Form A use as well

as two independent 1 Form A use

4. Controls low-level analog sig nals

PhotoMOS relays feature extremely low

closed-circuit offset voltage to enable

control of low-level analog signals without

distortion.

5. High sensitivity, high speed

response.

Can control a maximum 0.14 A load

current with a 5 mA input current. Fast

operation speed of 0.5 ms (typical).

(AQW210EH)

6. Low-level off state leakage current

TYPICAL APPLICATIONS

• Modem

• Telephone equipment

• Security equipment

• Sensors

GU-E PhotoMOS (AQW21PEH)

2ds_x615_en_aqw21eh: 181206J

2. Electrical characteristics (Ambie nt temperature: 25°C 77°F)

Note: Recommendable LED forward current IF= 5 to 10mA. Type of connection

*Turn on/Turn off time

Q Dimensions

Q Schematic and Wiring Diagrams

Q Cautions for Use

REFERENCE DATA

Item Symbol AQW212EH(A) AQW210EH(A) AQW214EH(A) AQW216EH(A) Condition

Input

LED operate

current Typical IFon 1.2mA IL=Max.

Maximum 3.0mA

LED turn off

current Minimum IFoff 0.4mA IL=Max.

Typical 1.1mA

LED dropout

voltage Typical VF1.25 V (1.14 V at IF=5mA) IF=50mA

Maximum 1.5V

Output On resistance Typical Ron 0.83Ω18Ω26Ω52ΩIF=5mA

IL=Max.

Within 1 s on time

Maximum 2.5Ω25Ω35Ω120Ω

Off state leakage

current Maximum ILeak 1μAIF=0mA

VL=Max.

Transfer

characteristics

Turn on time* Typical Ton 1ms 0.5ms IF=5mA

IL=Max.

Maximum 4ms 2.0ms

Turn off time* Typical Toff 0.08ms 0.04ms IF=5mA

IL=Max.

Maximum 1.0ms

I/O capacitance Typical Ciso 0.8pF f =1MHz

VB =0V

Maximum 1.5pF

Initial I/O isolation

resistance Minimum Riso 1,000MΩ500V DC

Ton

Input

Output 10%

90%

Toff

1-(1). Load current vs. ambient temperature

characteristics

Allowable ambient temperature: –20°C to +85°C

–4°F to +185°F

1-(2). Load current vs. ambient temperature

characteristics

Allowable ambient temperature: –40°C to +85°C

–40°F to +185°F

1-(3). Load current vs. ambient temperature

characteristics

Allowable ambient temperature: –40°C to +85°C

–40°F to +185°F

200

150

100

0204060-20

8085

100-40

AQW210EH

(using only 1 channel)

AQW210EH

(using 2 channels)

AQW214EH

(using only 1 channel)

AQW214EH

(using 2 channels)

Load current, mA

Ambient temperature,

0.6

0.2

0.1

0.8

0.7

-40 -20 0 20 40 60

100

0.4

0.3

0.5

AQW212EH

(using only 1 channel)

AQW212EH

(using 2 channels)

Load current, mA

Ambient temperature,

0.06

0.02

0.01

0.07

-40 -20 0 20 40 60

100

0.04

0.03

0.05

AQW216EH

(using only 1 channel)

AQW216EH

(using 2 channels)

Load current, mA

Ambient temperature,

GU-E PhotoMOS (AQW21PEH)

ds_x615_en_aqw21eh: 181206J

2-(1). On resistance vs. ambient temperature

characteristics

Measured portion: between terminals 5 and 6, 7 and 8;

LED current: 5 mA; Load voltage: Max. (DC);

Continuous load current: Max. (DC)

2-(2). On resistance vs. ambient temperature

characteristics

Measured portion: between terminals 5 and 6, 7 and 8;

LED current: 5 mA; Load voltage: Max. (DC);

Continuous load current: Max. (DC)

2-(3). On resistance vs. ambient temperature

characteristics

Measured portion: between terminals 5 and 6, 7 and 8;

LED current: 5 mA; Load voltage: Max. (DC);

Continuous load current: Max. (DC)

-40

0-20 20 40 60 8085

AQW210EH

AQW214EH

On resistance, Ω

Ambient temperature,

0-40 -20

1.5

0.5

0204060

80 85

AQW212EH

On resistance, Ω

Ambient temperature,

0-40 -20

100

0204060

80 85

AQW216EH

On resistance, Ω

Ambient temperature,

3. Tu rn on time vs. ambient temperature

characteristics

Sample: All types

LED current: 5 mA; Load voltage: Max. (DC);

Continuous load current: Max. (DC)

4. Turn off time vs. ambient temperature

characteristics

Sample: All types

LED current: 5 mA; Load voltage: Max. (DC);

Continuous load current: Max. (DC)

5. LED operate current vs. ambient

temperature characteristics

Sample: All types; Load voltage: Max. (DC);

Continuous load current: Max. (DC)

0.5

1.5

-40 -20

2.5

0204060

80 85

AQW216EH

AQW212EH

AQW210EH

AQW214EH

Turn on time, ms

Ambient temperature, °C

0.05

0.1

0.15

0.2

0.3

-40 -20

0.25

0204060

80 85

AQW216EH

AQW212EH

AQW210EH

AQW214EH

Turn off time, ms

Ambient temperature, °C

-40

0-20 20 40 60

8085

LED operate current, mA

Ambient temperature,

6. LED turn off current vs. ambient temperature

characteristics

Sample: All types; Load voltage: Max. (DC);

Continuous load current: Max. (DC)

7. LED dropout voltage vs. ambient

temperature characteristics

Sample: All types; LED current: 5 to 50 mA

8-(1). Current vs. voltage characteristics of

output at MOS portion

Measured portion: between terminals 5 and 6, 7 and 8;

Ambient temperature: 25°C 77°F

-40

0-20 20 40 60

8085

LED turn off current, mA

Ambient temperature,

0-20-40 20 40 60

8085

1.5

1.4

1.3

1.2

1.1

1.0

5mA

50m

30m

20m

10m

LED dropout voltage, V

Ambient temperature,

-5 -3

140

120

-20

-40

-60

-80

-100

-120

-140

100

-2-4

AQW210EH

AQW214EH

-120

Current, mA

Voltage, V

8-(2). Current vs. voltage characteristics of

output at MOS portion

Measured portion: between terminals 3 and 4;

Ambient temperature : 25°C 77°F

8-(3). Current vs. voltage characteristics of

output at MOS portion

Measured portion: between terminals 3 and 4;

Ambient temperature: 25°C 77°F

9-(1). Off state leakage current vs. load voltage

characteristics

Measured portion: between terminals 5 and 6, 7 and 8;

Ambient temperature: 25°C 77°F

AQW212EH

-0.4

-0.6

-0.2

-0.5 0.5 1-1 0

0.6

0.4

0.2

Voltage, V

Current, A

AQW216EH

-0.04

-0.08

-0.06

-0.02

0-4-6 -2 624

0.08

0.04

0.06

0.02

Voltage, V

Current, A

060 100

20 40 80

AQW214EH

AQW210EH

10-3

10-6

10-9

10-12

Off state leakage current, A

Load voltage, V

GU-E PhotoMOS (AQW21PEH)

4ds_x615_en_aqw21eh: 181206J

9-(2). Off state leakage current vs. load volt age

characteristics

Measured portion: between terminals 5 and 6, 7 and 8;

Ambient temperature : 25°C 77°F

10. Turn on time vs. LED forward current

characteristics

Sample: All types

Measured portion: between terminals 5 and 6, 7 and 8;

Load voltage: Max. (DC); Continuous load current:

Max. (DC); Ambient temperat ure: 25°C 77°F

11. Turn off time vs. LED forward current

characteristics

Sample: All types

Measured portion: between terminals 5 and 6, 7 and 8;

Load voltage: Max. (DC); Contin uous load current:

Max. (DC); Ambient temperature: 25°C 77°F

806040200 100

AQW216EH

AQW212EH

-13

-11

-9

-7

-5

-3

Off state leakage current, A

Load voltage, V

0.5

1.5

2.5

10 20 30 40 50 60

AQW210EH

AQW214EH

Turn on time, ms

LED forward current, mA

AQW216EHAQW212EH

0.05

0.1

100203040

0.2

50 60

0.15

AQW216EH

AQW212EH

AQW210EH

AQW214EH

Turn off time, ms

LED forward current, mA

12-(1). Output capacitance vs. applied voltage

characteristics

Measured portion: between terminals 5 and 6, 7 and 8;

Frequency: 1 MHz; Ambient temperature: 25°C 77°F

12-(2). Output capacitance vs. applied volt age

characteristics

Measured portion: between terminals 5 and 6, 7 and 8;

Frequency: 1 MHz; Ambient temperature: 25°C 77°F

10 20 30 40 500

AQW216EH

Output capacitance, pF

Applied voltage, V

AQW210EH

AQW214EH

100

150

200

020530251510

AQW212EH

Output capacitance, pF

Applied voltage, V