2014-04-071
BFP193
1
2
3
4
Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain amplifiers up to 2 GHz
• For linear broadband amplifiers
• fT = 8 GHz, NFmin = 1 dB at 900 MHz
• Pb-free (RoHS compliant) package
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP193 RCs 1 = C 2 = E 3 = B 4 = E - - SOT143
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 12 V
Collector-emitter voltage VCES 20
Collector-base voltage VCBO 20
Emitter-base voltage VEBO 2
Collector current IC80 mA
Base current IB10
Total power dissipation1)
TS ≤ 72°C
Ptot 580 mW
Junction temperature TJ150 °C
Storage temperature TSt
g
-55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS 135 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
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BFP193
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 12 - - V
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
ICES - - 100 µA
Collector-base cutoff current
VCB = 10 V, IE = 0
ICBO - - 100 nA
Emitter-base cutoff current
VEB = 1 V, IC = 0
IEBO - - 1 µA
DC current gain
IC = 30 mA, VCE = 8 V, pulse measured
hFE 70 100 140 -
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BFP193
Electrical Characteristics at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 50 mA, VCE = 8 V, f = 500 MHz
fT6 8 - GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.59 0.9 pF
Collector emitter capacitance
VCE = 10 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.28 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 2.25 -
Minimum noise figure
IC = 10 mA, VCE = 8 V, ZS = ZSopt,
f = 900 MHz
f = 1.8 GHz
NFmin
-
-
1
1.6
-
-
dB
Power gain, maximum available1)
IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt,
f = 900 MHz
f = 1.8 GHz
Gma
-
-
18
12
-
-
Transducer gain
IC = 30 mA, VCE = 8 V, ZS = ZL = 50Ω,
f = 900 MHz
f = 1.8 GHz
|S21e|2
-
-
14.5
8.5
-
-
dB
Third order intercept point at output2)
IC = 30 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 900 MHz
IP3- 29.5 - dBm
1dB Compression point
IC = 30 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 900 MHz
P-1dB - 13 -
1Gma = |S21 / S12| (k-(k²-1)1/2)
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.2 MHz to 12 GHz
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BFP193
Total power dissipation Ptot = ƒ(TS)
0 20 40 60 80 100 120 °C 150
TS
0
50
100
150
200
250
300
350
400
450
500
mW
600
Ptot
2014-04-075
BFP193
Package SOT143
2014-04-076
BFP193
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
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Life support devices or systems are intended to be implanted in the human body or
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