DMN63D8LDW-7 - DIODES INC - Datasheet.Directory

DMN63D8LDW

Document number: DS36021 Rev. 3 - 2 1 of 6

www.diodes.com November 2012

DMN63D8LDW

NEW PRODUCT

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V(BR)DSS R

DS(ON) ID

= 25°C

30V 4.2Ω @ VGS = 4.5V 200mA

2.8Ω @ VGS = 10V 260mA

Description

This new generation MOSFET has been designed to minimize the

on-state resistance (RDS(on)) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Applications

• DC-DC Converters

• Power management functions

• Battery Operated Systems and Solid-State Relays

• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc

Features

• Dual N-Channel MOSFET

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Small Surface Mount Package

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT363

• Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.006 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMN63D8LDW-7 SOT363 3000/Tape & Reel

DMN63D8LDW-13 SOT363 10000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes In corpor ated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

SOT363

Top View Top View

Internal Schematic

ESD PROTECTED

MM4 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: Z = 2012)

M = Month (ex: 9 = September)

MM4 YM

DMN63D8LDW

Document number: DS36021 Rev. 3 - 2 2 of 6

www.diodes.com November 2012

DMN63D8LDW

NEW PRODUCT

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage VDSS 30 V

Gate-Source Voltage VGSS ±20 V

Continuous Drain Current (Note 5) VGS = 10V Steady

State TA = +25°C

TA = +70°C ID 220

170 mA

Continuous Drain Current (Note 6) V GS = 10V Steady

State TA = +25°C

TA = +70°C ID 260

210 mA

Pulsed Drain Current (10μs pulse, duty cycle = 1%) IDM 800 mA

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Total Power Dissipation (Note 5) PD 300 mW

(Note 6) 400

Thermal Resistance, Junction to Ambient (Note 5) RθJA 435 °C/W

(Note 6) 330

Thermal Resistance, Junction to Case (Note 6) R

JC 139

Operating and Storage Temperature Range TJ, TSTG -55 to 150 °C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage BVDSS 30 ⎯ ⎯ V VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1.0 µA

VDS = 30V, VGS = 0V

Gate-Body Leakage IGSS ⎯ ⎯ ±10.0 μA VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage VGS

(

)

0.8 ⎯ 1.5 V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance RDS (ON)

⎯ ⎯ 2.8

VGS = 10.0V, ID =250mA

⎯ ⎯ 3.8 VGS = 5V, ID = 250mA

⎯ ⎯ 4.2 VGS = 4.5V, ID =250mA

⎯ ⎯ 4.5 VGS = 4.0V, ID =250mA

⎯ ⎯ 13 VGS = 2.5V, ID =10mA

Forward Transconductance gFS 80 ⎯ ⎯ mS VDS = 10V, ID = 0.115A

Diode Forward Voltage VSD - 0.8

1.2

V VGS = 0V, IS = 115mA

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance Ciss ⎯ 22.0 ⎯ pF VDS = 25V, VGS = 0V, f = 1.0MHz

Output Capacitance Coss ⎯ 3.2 ⎯

Reverse Transfer Capacitance Crss ⎯ 2.0 ⎯

Gate Resistance RG ⎯ 79.9 ⎯ Ω V

DS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge VGS = 10V Q

⎯ 0.87 ⎯

nC VGS = 10V, VDS = 30V,

ID = 150mA

Total Gate Charge VGS = 4.5V Q

⎯ 0.43 ⎯

Gate-Source Charge Q

s ⎯ 0.11 ⎯

Gate-Drain Charge Q

d ⎯ 0.11 ⎯

Turn-On Delay Time tD

(

)

⎯ 3.3 ⎯

nS VDD = 30V, ID = 0.115A, VGEN = 10V,

RGEN = 25Ω

Turn-On Rise Time t

⎯ 3.2 ⎯

Turn-Off Delay Time tD

(

off

)

⎯ 12.0 ⎯

Turn-Off Fall Time tf ⎯ 6.3 ⎯

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout

7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

DMN63D8LDW

Document number: DS36021 Rev. 3 - 2 3 of 6

www.diodes.com November 2012

DMN63D8LDW

NEW PRODUCT

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

012345

V , DRAIN-SOURCE VOLTAGE (V)

Fig ur e 1 Typical Output Characteristic

I, D

AIN

(A)

V= 2.0V

V= 2.5V

V= 3.0V

V= 4.0V

V= 4.5V

V = 10.0V

0.1

0.2

0.3

0.4

0.5

0.6

01 23 45

V , GATE-SOURCE VOLTAGE (V)

Fig ur e 2 Typical Transfer Char acterist i cs

I, D

(A)

V = 5.0V

T = 150°C

T = 125°C

T = 85°C

T = 25°C

T = -55°C

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

I , DRAIN-SOURCE CURRENT (A)

Figure 3 Typical On-Resistance vs.

Drain Current and G at e Voltage

, D

AIN-S

N-

ESISTANCE ( )

DS(ON)

V = 2.5V

V = 4.5V

V = 10V

1.5

2.5

3.5

4.5

0 5 10 15 20

1.0

2.0

3.0

4.0

5.0

V , GATE-SOURCE VOLTAGE (V)

Fig ure 4 Typi cal Drain-Source O n-Resi st ance

vs. Gate-Sou rce Volt a ge

, D

AIN-S

N-

ESIS

E ( )

DS(ON)

I = 250mA

I = 100mA

I= 10mA

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

I , DRAIN CURRENT (A)

Figure 5 Typical On-Resistance vs.

Drain Current and Temp er ature

, D

AIN-S

N-

ESISTANCE ( )

DS(ON)

T = -55°C

T = 25°C

T = 85°C

T = 125°C

T = 150°C

V = 4.5V

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

Fi gure 6 On - R esistanc e Variat ion wi t h Tem perat ure

0.6

0.8

1.0

1.2

1.4

1.6

, D

-S

ON-RESIST A NCE (NORMALIZED)

DS(ON)

V = 4.0V

I = 200mA

V=V

I = 300mA

5.0

DMN63D8LDW

Document number: DS36021 Rev. 3 - 2 4 of 6

www.diodes.com November 2012

DMN63D8LDW

NEW PRODUCT

1.5

2.5

3.5

4.5

, D

-S

ESIS

E ( )

DS(ON)

1.0

2.0

3.0

4.0

5.0

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

Figure 7 On-Resistance Variation wit h Temperature

V = 4.0V

I = 200mA

V=V

I = 300mA

5.0

0.6

0.8

1.2

1.4

1.6

1.8

LD V

E (V)

GS(th)

1.0

2.0

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

Figure 8 Gate Threshold Variation vs. Ambient Temperature

I= 1mA

I = 250µA

I , SOURCE CURRENT (A)

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0 0.3 0.6 0.9 1.2 1.5

V , SOURCE-DRAIN VOLTAGE (V)

Fi gure 9 Dio de For war d Vol t age vs . Cur r ent

T= 25°C

T = -55°C

T= 85°C

T = 125°C

T = 150°C

DMN63D8LDW

Document number: DS36021 Rev. 3 - 2 5 of 6

www.diodes.com November 2012

DMN63D8LDW

NEW PRODUCT

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

SOT363

Dim Min Max Typ

A 0.10 0.30 0.25

B 1.15 1.35 1.30

C 2.00 2.20 2.10

D 0.65 Typ

F 0.40 0.45 0.425

H 1.80 2.20 2.15

J 0 0.10 0.05

K 0.90 1.00 1.00

L 0.25 0.40 0.30

M 0.10 0.22 0.11

α 0° 8° -

All Dimensions in mm

Dimensions Value (in mm)

Z 2.5

G 1.3

X 0.42

Y 0.6

C1 1.9

C2 0.65

B C

DMN63D8LDW

Document number: DS36021 Rev. 3 - 2 6 of 6

www.diodes.com November 2012

DMN63D8LDW

NEW PRODUCT

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