Vishay Siliconix
SUD25N15-52
Document Number: 71768
S09-1501-Rev. D, 10-Aug-09
www.vishay.com
1
N-Channel 150-V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
• PWM Optimized
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)I
D (A)
150 0.052 at VGS = 10 V 25
0.060 at VGS = 6 V 23
TO-252
SGD
Top View
Drain Connected to Tab
Ordering Information:
SUD25N15-52-E3 (Lead (Pb)- free)
N-Channel MOSFET
G
D
S
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See SOA curve for voltage derating.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 150 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 175 °C)bTC = 25 °C ID
25
A
TC = 125 °C 14.5
Pulsed Drain Current IDM 50
Continuous Source Current (Diode Conduction) IS25
Avalanche Current IAR 25
Repetitive Avalanche Energy (Duty Cycle ≤ 1 %) L = 0.1 mH EAR 31 mJ
Maximum Power Dissipation
TC = 25 °C PD
136b
W
TA = 25 °C 3a
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Junction-to-Ambientat ≤ 10 s RthJA
15 18
°C/W
Steady State 40 50
Junction-to-Case (Drain) RthJC 0.85 1.1
www.vishay.com
2
Document Number: 71768
S09-1501-Rev. D, 10-Aug-09
Vishay Siliconix
SUD25N15-52
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ.a Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 150 V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 24
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 150 V, VGS = 0 V 1
µA
VDS = 150 V, VGS = 0 V, TJ = 125 °C 50
VDS = 150 V, VGS = 0 V, TJ = 175 °C 250
On-State Drain CurrentbID(on) V
DS = 5 V, VGS = 10 V 50 A
Drain-Source On-State ResistancebRDS(on)
VGS = 10 V, ID = 5 A 0.042 0.052
Ω
VGS = 10 V, ID = 5 A, TJ = 125 °C 0.109
VGS = 10 V, ID = 5 A, TJ = 175 °C 0.145
VGS = 6 V, ID = 5 A 0.047 0.060
Forward Transconductancebgfs VDS = 15 V, ID = 25 A 40 S
Dynamica
Input Capacitance Ciss
VGS = 0 V, VDS = 25 V, f = 1 MHz
1725
pFOutput Capacitance Coss 216
Reverse Transfer Capacitance Crss 100
Total Gate ChargecQg
VDS = 75 V, VGS = 10 V, ID = 25 A
33 40
nC
Gate-Source ChargecQgs 9
Gate-Drain ChargecQgd 12
Gate Resistance Rg13Ω
Tur n - O n D e l ay Timectd(on)
VDD = 50 V, RL = 3 Ω
ID ≅ 25 A, VGEN = 10 V, Rg = 2.5 Ω
15 25
ns
Rise Timectr70 100
Turn-Off Delay Timectd(off) 25 40
Fall Timectf60 90
Source-Drain Diode Ratings and Characteristics TC = 25 °C
Pulsed Current ISM 50 A
Diode Forward VoltagebVSD IF = 25 A, VGS = 0 V 0.9 1.5 V
Source-Drain Reverse Recovery Time trr IF = 25 A, dI/dt = 100 A/µs 95 140 ns
Document Number: 71768
S09-1501-Rev. D, 10-Aug-09
www.vishay.com
3
Vishay Siliconix
SUD25N15-52
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
Transconductance
Capacitance
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)ID
0
10
20
30
40
50
0246810
6 V
VGS = 10 V thru 7 V
4 V
5 V
0
10
20
30
40
50
60
0 1020304050
- Transconductance (S)g fs
TC = - 55 °C
25 °C
125 °C
ID- Drain Current (A)
0
500
1000
1500
2000
2500
0 30 60 90 120 150
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
oss
C
iss
C
rss
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
VGS - Gate-to-Source Voltage (V)
- D r a i n C urrent (A)ID
0
10
20
30
40
50
01234567
-55 °C
TC = 125 °C
25 °C
- On-Resistance (Ω)
ID
- Drain Current (A)
RDS(on)
0.00
0.02
0.04
0.06
0.08
0.10
0 1020304050
VGS = 10 V
VGS = 6 V
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0
4
8
12
16
20
0 102030405060
V
DS
= 75 V
I
D
= 25 A
www.vishay.com
4
Document Number: 71768
S09-1501-Rev. D, 10-Aug-09
Vishay Siliconix
SUD25N15-52
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71768.
On-Resistance vs. Junction Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
- 50 - 25 0 25 50 75 100 125 150 175
TJ- J unction Temperature ( )°C
VGS = 10 V
ID = 5 A
RDS(on) - On-Resistance
(Normalized)
Source-Drain Diode Forward Voltage
VSD - S o urce-to-Drain Voltage (V)
- S o urce Current (A)IS
100
10
1
0.3 0.6 0.9 1.2
TJ= 25 °C
TJ= 150 °C
0
Maximum Avalanche Drain Current
vs. Case Temperature
TC- Case Temperature (°C)
- Drain Current (A)
ID
0
5
10
15
20
25
30
0 25 50 75 100 125 150 175
Safe Operating Area
- Drain Current (A)ID
10
0.1 00010111.0
Limited by RDS(on)*
1
100
TC = 25 °C
Single Pulse
10 ms
100 ms
1 s, DC
100 µs
10 µs
100
1 ms
VDS - Drain-to-Source Voltage (V)
*VGS > minimumVGS at which RDS(on) is specified
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (s)
2
1
0.1
0.01 10-410-310-21010-11
Normalized Effective Transient
Thermal Impedance
0.2
0.1
Duty Cycle = 0.5
30
0.05
0.02
Single Pulse
Document Number: 71197 www.vishay.com
18-Apr-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-252AA CASE OUTLINE
Note
• Dimension L3 is for reference only.
L2
D
L1
L3
bb1
e1
E1
D1
A1
C
A2
gage plane height (0.5 mm)
e
b2
E
C1
A
L
H
MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX.
A 2.21 2.38 0.087 0.094
A1 0.89 1.14 0.035 0.045
A2 0.030 0.127 0.001 0.005
b 0.71 0.88 0.028 0.035
b1 0.76 1.14 0.030 0.045
b2 5.23 5.44 0.206 0.214
C 0.46 0.58 0.018 0.023
C1 0.46 0.58 0.018 0.023
D 5.97 6.22 0.235 0.245
D1 4.10 4.45 0.161 0.175
E 6.48 6.73 0.255 0.265
E1 4.49 5.50 0.177 0.217
e 2.28 BSC 0.090 BSC
e1 4.57 BSC 0.180 BSC
H 9.65 10.41 0.380 0.410
L 1.40 1.78 0.055 0.070
L1 0.64 1.02 0.025 0.040
L2 0.89 1.27 0.035 0.050
L3 1.15 1.52 0.040 0.060
ECN: T11-0110-Rev. L, 18-Apr-11
DWG: 5347
Application Note 826
Vishay Siliconix
Document Number: 72594 www.vishay.com
Revision: 21-Jan-08 3
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.420
(10.668)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.224
(5.690)
0.180
(4.572)
0.055
(1.397)
0.243
(6.180)
0.087
(2.202)
0.090
(2.286)
Return to Index
Return to Index
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
