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DATA SH EET
Product data sheet 2002 Sep 02
DISCRETE SEMICONDUCTORS
BAT74V
Schottky barrier double diode
M3D74
4
2002 Sep 02 2
NXP Semiconductors Product data sheet
Schottky barrier double diode BAT74V
FEATURES
•Low forward vo lta ge
•Low capacitan ce
•Ultra small SMD plastic pa c kage
•Flat leads: excellent coplanarity and improv ed thermal
behaviour.
APPLICATIONS
•Ultra high-speed switching
•Voltage clamping
•Line termination
•Inverse polarity protection.
DESCRIPTION
Planar Schottky barrier do uble diode with an integra t ed
guard ring for str es s protection.
Two separate dies enc ap sulated in a SOT666 ultra small
SMD plastic package.
PINNING
PIN DESCRIPTION
1anode 1
2not connected
3cathode 2
4anode 2
5not connected
6cathode 1
handbook, halfpage
123
46 5
Top view MAM461
64
3
1
Fig.1 Simplified outline (SOT666) and symbol.
Marking code: 74.
LIMITING VALUES
In accordance wi th the Absolute Max imum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRcontinuous revers e voltage −30 V
IFcontinuous forward current −200 mA
IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 −300 mA
IFSM non-repetitive peak forward current tp < 10 ms 600 mA
Ptot total power dissipation Tamb ≤ 25 °C−230 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −125 °C
Tamb operating ambient temperature −65 +125 °C
2002 Sep 02 3
NXP Semiconductors Pr oduct dat a shee t
Schottky barrier double diode BAT74V
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp = 300 μs; δ = 0.02.
THERMAL CHARACTE RISTICS
Note
1. Refer to SOT666 standard mounting conditions.
Soldering
The only recommended soldering method is reflow soldering .
SYMBOL PARAMETER CONDITIONS MAX. UNIT
VFcontinuous forward v oltage IF = 0.1 mA 240 mV
IF = 1 mA 320 mV
IF = 1 0 mA 400 mV
IF = 30 mA 500 mV
IF = 1 00 mA; note 1; see Fig.2 800 mV
IRreverse current VR = 25 V; note 1; see Fig.3 2μA
Cddiode capacit an ce VR = 1 V; f = 1 MHz; see Fig.4 10 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 416 K/W
2002 Sep 02 4
NXP Semiconductors Pr oduct dat a shee t
Schottky barrier double diode BAT74V
GRAPHICAL DATA
handbook, halfpage
10
IF
VF (V)
3
10
(mA)
2
10
1
10 11.20.80.40
MSA892
(3)(2)(1)
(3)(2)(1)
Fig.2 Forward current as a function of forward
voltage; typical values.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
0102030
V (V)
R
10
3
IR
(μA)
10
2
10
1
10
1
(1)
(2)
(3)
MSA893
Fig.3 Reverse current as a function of rev erse
voltage; typical values.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
handbook, halfpage
0102030
0
5
10
15
VR (V)
Cd
(pF)
MSA891
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tamb = 25 °C.
2002 Sep 02 5
NXP Semiconductors Pr oduct data sheet
Schottky barrier double diode BAT74V
PACKAGE OUTLINE
UNIT bpcDE e1HELpw
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
01-01-04
01-08-27
IEC JEDEC EIAJ
mm 0.27
0.17 0.18
0.08 1.7
1.5 1.3
1.1 0.5
e
1.0 1.7
1.5 0.1
y
0.1
DIMENSIONS (mm are the original dimensions)
0.3
0.1
SOT666
bp
pin 1 index
D
e1
e
A
Lp
detail X
HE
E
A
S
0 1 2 mm
scale
A
0.6
0.5
c
X
123
456
Plastic surface mounted package; 6 leads SOT66
6
YS
wMA
2002 Sep 02 6
NXP Semiconductors Pr oduct data sheet
Schottky barrier double diode BAT74V
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document befor e initiating or completing a design.
2. The product s ta tus of device(s ) described in this do cument may have changed since this do cument was publishe d
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
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of such information and shall have no liability for the
consequenc es of use of such information.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
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specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
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of an NXP Semiconductors product can reasonably be
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accepts no liability for inclusion and/or use of NXP
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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regulations. Export might require a prior authorization from
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this document does not form p art o f an y q uot ation or co nt ra ct, is believed to be accurate and relia ble and may be chan ged
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Printed in The Netherlands 613514/01/pp7 Date of release: 2002 Sep 02 Document orde r number: 9397 750 10101
