1
FEATURES APPLICATIONS
DCUPACKAGE
(TOP VIEW)
1
2
3
8
6
COM
EN
GND NO
V+
7NC
Logic
Control
4 5 INGND
2
YZP PACKAGE
(BOTTOMVIEW)
GND
GND
EN
COM
NC
NO
IN
V+
1
A1
B1
C1
D1
3
4
8
7
5
6
Logic
Control
A2
B2
C2
D2
DESCRIPTION/ORDERING INFORMATION
TS5A3153
www.ti.com
..................................................................................................................................................... SCDS215A – OCTOBER 2005 – REVISED JULY 2008
5-V/3.3-V SINGLE-CHANNEL 2:1 MULTIPLEXER/DEMULTIPLEXER
•Cell Phones2
•Isolation in the Powered-Off Mode, V
+
= 0
•PDAs•Specified Break-Before-Make Switching
•Portable Instrumentation•Low ON-State Resistance (1 Ω)
•Audio and Video Signal Routing•Control Inputs Are 5.5-V Tolerant
•Low-Voltage Data-Acquisition Systems•Low Charge Injection
•Communication Circuits•Excellent ON-State Resistance Matching
•Modems•Low Total Harmonic Distortion (THD)
•Hard Drives•1.65-V to 5.5-V Single-Supply Operation
•Computer Peripherals•Latch-Up Performance Exceeds 100 mA Per
•Wireless Terminals and PeripheralsJESD 78, Class II•ESD Performance Tested Per JESD 22– 2000-V Human-Body Model(A114-B, Class II)– 1000-V Charged-Device Model (C101)
The TS5A3153 is a single-pole double-throw (SPDT) analog switch that is designed to operate from 1.65 V to5.5 V. The device offers a low ON-state resistance and an excellent on-resistance matching with thebreak-before-make feature, to prevent signal distortion during the transferring of a signal from one channel toanother. The device has an excellent total harmonic distortion (THD) performance and consumes very lowpower. These features make this device suitable for portable audio applications.
ORDERING INFORMATION
T
A
PACKAGE
(1) (2)
ORDERABLE PART NUMBER TOP-SIDE MARKING
(3)
NanoStar™ – WCSP (DSBGA)0.23-mm Large Bump – YZP Reel of 3000 TS5A3153YZPR _ _ _J57– 40 ° C to 85 ° C
(Pb-free)
SSOP – DCU Reel of 3000 TS5A3153DCUR JCD_
(1) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging .(2) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TIwebsite at www.ti.com .(3) DCU: The actual top-side marking has one additional character that designates the assembly/test site.YZP: The actual top-side marking has three preceding characters to denote year, month, and sequence code, and one followingcharacter to designate the assembly/test site. Pin 1 identifier indicates solder-bump composition (1 = SnPb, • = Pb-free).
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2NanoStar is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Copyright © 2005 – 2008, Texas Instruments IncorporatedProducts conform to specifications per the terms of the TexasInstruments standard warranty. Production processing does notnecessarily include testing of all parameters.
TS5A3153
SCDS215A – OCTOBER 2005 – REVISED JULY 2008 .....................................................................................................................................................
www.ti.com
FUNCTION TABLE
NC TO COM, NO TO COM,EN IN
COM TO NC COM TO NO
L L ON OFFL H OFF ONH X OFF OFF
Summary of Characteristics
(1)
Single-Pole, Double-ThrowConfiguration
2:1 Multiplexer/Demultiplexer (SPDT)
Number of channels 1ON-state resistance (r
on
) 1.1 Ω
ON-state resistance match ( Δr
on
) 0.1 Ω
ON-state resistance flatness (r
on(flat)
) 0.15 Ω
Turn-on/turn-off time (t
ON
/t
OFF
) 20 ns/15 nsMake-before-break time (t
MBB
) 12 nsCharge injection (Q
C
) 36 pCBandwidth (BW) 100 MHzOFF isolation (O
ISO
) – 65 dB at 1 MHzCrosstalk (X
TALK
) – 68 dB at 1 MHzTotal harmonic distortion (THD) 0.01%Leakage current (I
COM(OFF)
/I
NC(OFF)
) ± 20 nAPower-supply current (I
+
) 0.1 µAPackage option 8-pin SSOP or DSBGA
(1) V
+
= 5 V, T
A
= 25 ° C
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ABSOLUTE MINIMUM AND MAXIMUM RATINGS
(1) (2)
TS5A3153
www.ti.com
..................................................................................................................................................... SCDS215A – OCTOBER 2005 – REVISED JULY 2008
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
V
+
Supply voltage range
(3)
– 0.5 6.5 VV
NC
,V
NO
, Analog voltage range
(3) (4) (5)
– 0.5 V
+
+ 0.5 VV
COM
I
K
Analog port diode current V
NC
, V
NO
, V
COM
< 0 or V
NO
, V
NC
, V
COM
> V
+
– 50 mAI
NC
, On-state switch current – 200 200I
COM
, V
NC
, V
NO
, V
COM
= 0 to V
+
mAOn-state peak switch current
(6)
– 400 400I
NO
V
I
Digital input voltage range
(3) (4)
– 0.5 6.5 VI
IK
Digital input clamp current V
I
< 0 – 50 mAI
+
Continuous current through V
+
100 mAI
GND
Continuous current through GND – 100 100 mADCU package 227θ
JA
Package thermal impedance
(7)
° C/WYZP package 102T
stg
Storage temperature range – 65 150 ° C
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods maydegrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyondthose specified is not implied.(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum(3) All voltages are with respect to ground, unless otherwise specified.(4) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.(5) This value is limited to 5.5 V maximum.(6) Pulse at 1-ms duration < 10% duty cycle.(7) The package thermal impedance is calculated in accordance with JESD 51-7.
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ELECTRICAL CHARACTERISTICS FOR 5-V SUPPLY
(1)
TS5A3153
SCDS215A – OCTOBER 2005 – REVISED JULY 2008 .....................................................................................................................................................
www.ti.com
V
+
= 4.5 V to 5.5 V, T
A
= – 40 ° C to 85 ° C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Analog Switch
Analog signal V
COM
, V
NO
,
0 V
+
Vrange V
NC
25 ° C 0.9 1.1Peak ON 0 ≤(V
NO
or V
NC
)≤V
+
, Switch ON,r
peak
4.5 V Ωresistance I
COM
= – 100 mA, See Figure 13
Full 1.325 ° C 0.8 0.9ON-state V
NO
or V
NC
= 2.5 V, Switch ON,r
on
4.5 V Ωresistance I
COM
= – 100 mA, See Figure 13
Full 1.1ON-state 25 ° C 0.05 0.1resistance
V
NO
or V
NC
= 2.5 V, Switch ON,matching Δr
on
4.5 V ΩI
COM
= – 100 mA, See Figure 13
Full 0.1between
channels
25 ° C 0.150≤(V
NO
or V
NC
)≤V
+
, Switch ON,I
COM
= – 100 mA, See Figure 13ON-state Fullresistance r
on(flat)
4.5 V ΩV
NO
or V
NC
= 1 V, 1.5 V, 25 ° C 0.09 0.15Switch ON,flatness
2.5 V,
See Figure 13
Full 0.15I
COM
= – 100 mA,V
NC
or V
NO
= 1 V, 25 ° C – 20 2 20V
COM
= 4.5 V,I
NC(OFF)
, Switch OFF,or 5.5 V nANC, NO
I
NO(OFF)
See Figure 14
Full – 150 150V
NC
or V
NO
= 4.5 V,OFF leakage
V
COM
= 1 V,current
25 ° C – 5 0.7 5I
NC(PWROFF)
, V
NC
or V
NO
= 0 to 5.5 V, Switch OFF,
0 V µAI
NO(PWROFF)
V
COM
= 5.5 V to 0, See Figure 14
Full – 25 25V
NC
or V
NO
= 1 V, 25 ° C – 20 2 20NC, NO V
COM
= Open,I
NC(ON)
, Switch ON,ON leakage or 5.5 V nAI
NO(ON)
See Figure 15
Full – 150 150current V
NC
or V
NO
= 4.5 V,V
COM
= Open,V
COM
= 1 V, V
NC
or 25 ° C – 20 2 20V
NO
= 4.5 V,
Switch OFF,I
COM(OFF)
or 5.5 V nACOM
See Figure 14
Full – 150 150V
COM
= 4.5 V,OFF leakage
V
NC
or V
NO
= 1 V,current
25 ° C – 5 0.7 5V
NC
or V
NO
= 0 to 5.5 V, Switch OFF,I
COM(PWROFF)
0 V µAV
COM
= 5.5 V to 0, See Figure 14
Full – 25 25V
COM
= 1 V, 25 ° C – 20 2 20COM V
NC
or V
NO
= Open,
Switch ON,ON leakage I
COM(ON)
or 5.5 V nASee Figure 15
Full – 150 150current V
COM
= 4.5 V,V
NC
or V
NO
= Open,
Digital Control Inputs (IN, EN)
(2)
Input logic high V
IH
Full 2.4 5.5 VInput logic low V
IL
Full 0 0.8 V25 ° C – 100 25 100Input leakage
I
IH
, I
IL
V
I
= 5.5 V or 0 V 5.5 V nAcurrent
Full – 100 100
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.(2) All unused digital inputs of the device must be held at V
+
or GND to ensure proper device operation. Refer to the TI application report,Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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TS5A3153
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..................................................................................................................................................... SCDS215A – OCTOBER 2005 – REVISED JULY 2008
ELECTRICAL CHARACTERISTICS FOR 5-V SUPPLY (continued)V
+
= 4.5 V to 5.5 V, T
A
= – 40 ° C to 85 ° C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Dynamic
25 ° C 5 V 1 12.5 16V
COM
= V
+
, C
L
= 35 pF,Turn-on time t
ON
ns4.5 V toR
L
= 50 Ω, See Figure 17
Full 1 17.55.5 V25 ° C 5 V 2.5 8.5 15V
COM
= V
+
, C
L
= 35 pF,Turn-off time t
OFF
ns4.5 V toR
L
= 50 Ω, See Figure 17
Full 2 185.5 V25 ° C 5 V 1 7 12Break-before- V
COM
= V
+
, C
L
= 35 pF,t
MBB
ns4.5 V tomake time R
L
= 50 Ω, See Figure 18
Full 0.5 155.5 VV
GEN
= 0, C
L
= 1 nF,Charge injection Q
C
25 ° C 5 V 12 pCR
GEN
= 0, See Figure 22NC, NO
C
NC(OFF)
, Switch OFF,OFF V
NC
or V
NO
= V
+
or GND, 25 ° C 5 V 19 pFC
NO(OFF)
See Figure 16capacitance
NC, NO
C
NC(ON)
, Switch ON,ON V
NC
or V
NO
= V
+
or GND, 25 ° C 5 V 57 pFC
NO(ON)
See Figure 16capacitance
COM OFF Switch ON,C
COM(OFF)
V
COM
= V
+
or GND, 25 ° C 5 V 36 pFcapacitance See Figure 16COM ON Switch ON,C
COM(ON)
V
COM
= V
+
or GND, 25 ° C 5 V 57 pFcapacitance See Figure 16Digital input
C
I
V
I
= V
+
or GND, See Figure 16 25 ° C 5 V 2 pFcapacitance
Switch ON,Bandwidth BW R
L
= 50 Ω, 25 ° C 5 V 97 MHzSee Figure 19R
L
= 50 Ω, Switch OFF,OFF isolation O
ISO
25 ° C 5 V – 64 dBf = 1 MHz, See Figure 20R
L
= 50 Ω, Switch ON,Crosstalk X
TALK
25 ° C 5 V – 64 dBf = 1 MHz, See Figure 21Total harmonic R
L
= 600 Ω, f = 20 Hz to 20 kHz,THD 25 ° C 5 V 0.004 %distortion C
L
= 50 pF, See Figure 23
Supply
25 ° C 0.02 0.1Positive supply
I
+
V
I
= V
+
or GND, Switch ON or OFF 5.5 V µAcurrent
Full 0.5
Copyright © 2005 – 2008, Texas Instruments Incorporated Submit Documentation Feedback 5
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ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY
(1)
TS5A3153
SCDS215A – OCTOBER 2005 – REVISED JULY 2008 .....................................................................................................................................................
www.ti.com
V
+
= 3 V to 3.6 V, T
A
= – 40 ° C to 85 ° C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V+ MIN TYP MAX UNIT
Analog
Switch
Analog signal V
COM
, V
NO
,
0 V
+
Vrange V
NC
25 ° C 1.3 1.6Peak ON 0 ≤(V
NO
or V
NC
)≤V
+
, Switch ON,r
peak
3 V Ωresistance I
COM
= – 100 mA, See Figure 13
Full 1.825 ° C 1.2 1.5ON-state V
NO
or V
NC
= 2 V, Switch ON,r
on
3 V Ωresistance I
COM
= – 100 mA, See Figure 13
Full 1.7ON-state 25 ° C 0.08 0.15resistance
V
NO
or V
NC
= 2 V, 0.8 V Switch ON,match Δr
on
3 V ΩI
COM
= – 100 mA, See Figure 13
Full 0.15between
channels
25 ° C 0.20≤(V
NO
or V
NC
)≤V
+
, Switch ON,ON-state
I
COM
= – 100 mA, See Figure 13
Fullresistance r
on(flat)
3 V Ω25 ° C 0.09 0.15V
NO
or V
NC
= 2 V, 0.8 V, Switch ON,flatness
I
COM
= – 100 mA, See Figure 13
Full 0.15V
NC
or V
NO
= 1 V, V
COM
= 3 V, 25 ° C – 20 2 20I
NC(OFF)
, Switch OFF,or 3.6 V nANC, NO
I
NO(OFF)
See Figure 14
Full – 50 50V
NC
or V
NO
= 3 V, V
COM
= 1 V,OFF leakage
current 25 ° C – 1 0.2 1I
NC(PWROFF)
, V
NC
or V
NO
= 0 to 3.6 V, Switch OFF,
0 V µAI
NO(PWROFF)
V
COM
= 3.6 V to 0 V, See Figure 14
Full – 15 15NC, NO V
NC
or V
NO
= 1 V, V
COM
= Open, 25 ° C – 20 2 20I
NC(ON)
, Switch ON,ON leakage or 3.6 V nAI
NO(ON)
See Figure 15
Full – 50 50current V
NC
or V
NO
= 3 V, V
COM
= Open,V
COM
= 1 V, V
NC
or V
NO
= 3 V, 25 ° C – 20 2 20Switch OFF,I
COM(OFF)
or 3.6 V nACOM
See Figure 14
Full – 50 50V
COM
= 3 V, V
NC
or V
NO
= 1 V,OFF leakage
current 25 ° C – 1 0.2 1V
NC
or V
NO
= 0 to 3.6 V, Switch OFF,I
COM(PWROFF)
0 V µAV
COM
= 3.6 V to 0, See Figure 14
Full – 15 15COM V
COM
= 1 V, V
NC
or V
NO
= Open, 25 ° C – 20 2 20Switch ON,ON leakage I
COM(ON)
or 3.6 V nASee Figure 15
Full – 50 50current V
COM
= 3 V, V
NC
or V
NO
= Open
Digital Control Inputs (IN, EN)
(2)
Input logic high V
IH
Full 2 5.5 VInput logic low V
IL
Full 0 0.8 V25 ° C – 100 25 100Input leakage
I
IH
, I
IL
V
I
= 5.5 V or 0 3.6 V nAcurrent
Full – 100 100
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.(2) All unused digital inputs of the device must be held at V
+
or GND to ensure proper device operation. Refer to the TI application report,Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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TS5A3153
www.ti.com
..................................................................................................................................................... SCDS215A – OCTOBER 2005 – REVISED JULY 2008
ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY (continued)V
+
= 3 V to 3.6 V, T
A
= – 40 ° C to 85 ° C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V+ MIN TYP MAX UNIT
Dynamic
25 ° C 3.3 V 1 17 22V
COM
= V
+
, C
L
= 35 pF,Turn-on time t
ON
ns3 V toR
L
= 50 Ω, See Figure 17
Full 1 243.6 V25 ° C 3.3 V 4.3 9.5 16V
COM
= V
+
, C
L
= 35 pF,Turn-off time t
OFF
ns3 V toR
L
= 50 Ω, See Figure 17
Full 4 193.6 V25 ° C 3.3 V 2 12 22Break-before- V
COM
= V
+
, C
L
= 35 pF,t
MBB
ns3 V tomake time R
L
= 50 Ω, See Figure 18
Full 1 253.6 VCharge V
GEN
= 0, C
L
= 1 nF,Q
C
25 ° C 3.3 V 8 pCinjection R
GEN
= 0, See Figure 22NC, NO
C
NC(OFF)
, Switch OFF,OFF V
NC
or V
NO
= V
+
or GND, 25 ° C 3.3 V 19 pFC
NO(OFF)
See Figure 16capacitance
NC, NO
C
NC(ON)
, Switch ON,ON V
NC
or V
NO
= V
+
or GND, 25 ° C 3.3 V 57 pFC
NO(ON)
See Figure 16capacitance
COM OFF Switch ON,C
COM(OFF)
V
COM
= V
+
or GND, 25 ° C 3.3 V 36 pFcapacitance SeeCOM
Switch ON,ON C
COM(ON)
V
COM
= V
+
or GND, 25 ° C 3.3 V 57 pFSee Figure 16capacitance
Digital input
C
I
V
I
= V
+
or GND, See Figure 16 25 ° C 3.3 V 2 pFcapacitance
Switch ON,Bandwidth BW R
L
= 50 Ω, 25 ° C 3.3 V 97 MHzSee Figure 19R
L
= 50 Ω, Switch OFF,OFF isolation O
ISO
25 ° C 3.3 V – 64 dBf = 1 MHz, See Figure 20R
L
= 50 Ω, Switch ON,Crosstalk X
TALK
25 ° C 3.3 V – 64 dBf = 1 MHz, See Figure 21f = 20 Hz to 20Total harmonic R
L
= 600 Ω,THD kHz, 25 ° C 3.3 V 0.01 %distortion C
L
= 50 pF,
See Figure 23
Supply
25 ° C 0.01 0.1Positive supply Switch ON orI
+
V
I
= V
+
or GND, 3.6 V µAcurrent OFF
Full 0.25
Copyright © 2005 – 2008, Texas Instruments Incorporated Submit Documentation Feedback 7
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ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY
(1)
TS5A3153
SCDS215A – OCTOBER 2005 – REVISED JULY 2008 .....................................................................................................................................................
www.ti.com
V
+
= 3 V to 3.6 V, T
A
= – 40 ° C to 85 ° C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Analog Switch
Analog signal V
COM
, V
NO
,
0 V
+
Vrange V
NC
25 ° C 1.9 2.5Peak ON 0 ≤(V
NO
or V
NC
)≤V
+
, Switch ON,r
peak
2.3 V Ωresistance I
COM
= – 8 mA, See Figure 13
Full 2.725 ° C 1.6 2.1ON-state V
NO
or V
NC
= 1.8 V, Switch ON,r
on
2.3 V Ωresistance I
COM
= – 8 mA, See Figure 13
Full 2.5ON-state 25 ° C 0.12 0.2resistance
V
NO
or V
NC
= 1.8 V, Switch ON,matching Δr
on
2.3 V ΩI
COM
= – 8 mA, See Figure 13
Full 0.2between
channels
0≤(V
NO
or V
NC
)≤V
+
, Switch ON,
25 ° C 0.65ON-state
I
COM
= – 8 mA, See Figure 13resistance r
on(flat)
2.3 V Ω25 ° C 0.5 1V
NO
or V
NC
= 0.8 V, 1.8 V, Switch ON,flatness
I
COM
= – 8 mA, See Figure 13
Full 1V
NC
or V
NO
= 0.5 V, 25 ° C – 20 2 20V
COM
= 2.2 V,I
NC(OFF)
, Switch OFF,or 2.7 V nANC, NO
I
NO(OFF)
See Figure 14
Full – 50 50V
NC
or V
NO
= 2.2 V,OFF leakage
V
COM
= 0.5 V,current
25 ° C – 1 0.1 1I
NC(PWROFF)
, V
NC
or V
NO
= 0 to 2.7 V, Switch OFF,
0 V µAI
NO(PWROFF)
V
COM
= 2.7 V to 0, See Figure 14
Full – 10 10V
NC
or V
NO
= 0.5 V, 25 ° C – 20 20NC, NO V
COM
= Open,I
NC(ON)
, Switch ON,ON leakage or 2.7 V nAI
NO(ON)
See Figure 15
Full – 50 50current V
NC
or V
NO
= 2.2 V,V
COM
= Open,V
COM
= 0.5 V, V
NC
or 25 ° C – 20 20V
NO
= 2.2 V,
Switch OFF,I
COM(OFF)
or 2.7 V nACOM
See Figure 14
Full – 50 50V
COM
= 2.2 V, V
NC
orOFF leakage
V
NO
= 0.5V,current
25 ° C – 1 1V
NC
or V
NO
= 0 to 2.7 V, Switch OFF,I
COM(PWROFF)
0 V µAV
COM
= 2.7 V to 0, See Figure 14
Full – 10 10V
COM
= 0.5 V, V
NC
or 25 ° C – 20 20COM V
NO
= Open,
Switch ON,ON leakage I
COM(ON)
or 2.7 V nASee Figure 15
Full – 50 50current V
COM
= 2.2 V, V
NC
orV
NO
= Open,
Digital Control Inputs (IN, EN)
(2)
Input logic high V
IH
Full 1.8 5.5 VInput logic low V
IL
Full 0 0.6 V25 ° C – 100 25 100Input leakage
I
IH
, I
IL
V
I
= 5.5 V or 0 2.7 V nAcurrent
Full – 100 100
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.(2) All unused digital inputs of the device must be held at V
+
or GND to ensure proper device operation. Refer to the TI application report,Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
8Submit Documentation Feedback Copyright © 2005 – 2008, Texas Instruments Incorporated
Product Folder Link(s): TS5A3153
TS5A3153
www.ti.com
..................................................................................................................................................... SCDS215A – OCTOBER 2005 – REVISED JULY 2008
ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY (continued)V
+
= 3 V to 3.6 V, T
A
= – 40 ° C to 85 ° C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Dynamic
25 ° C 2.5 V 1.7 24 31V
COM
= V
+
, C
L
= 35 pF,Turn-on time t
ON
ns2.3 V toR
L
= 50 Ω, See Figure 17
Full 1.5 33.52.7 V25 ° C 2.5 V 5.2 10.5 17V
COM
= V
+
, C
L
= 35 pF,Turn-off time t
OFF
ns2.3 V toR
L
= 50 Ω, See Figure 17
Full 5 202.7 V25 ° C 2.5 V 3 10 30Break-before- V
COM
= V
+
, C
L
= 35 pF,t
MBB
ns2.3 V tomake time R
L
= 50 Ω, See Figure 18
Full 2 402.7 VV
GEN
= 0, C
L
= 1 nF,Charge injection Q
C
25 ° C 2.5 V 6 pCR
GEN
= 0, See Figure 22NC, NO
C
NC(OFF)
, Switch OFF,OFF V
NC
or V
NO
= V
+
or GND, 25 ° C 2.5 V 19 pFC
NO(OFF)
See Figure 16capacitance
NC, NO
C
NC(ON)
, Switch ON,ON V
NC
or V
NO
= V
+
or GND, 25 ° C 2.5 V 57 pFC
NO(ON)
See Figure 16capacitance
COM OFF Switch ON,C
COM(OFF)
V
COM
= V
+
or GND, 25 ° C 2.5 V 36 pFcapacitance See Figure 16COM ON Switch ON,C
COM(ON)
V
COM
= V
+
or GND, 25 ° C 2.5 V 57 pFcapacitance See Figure 16Digital input
C
I
V
I
= V
+
or GND, See Figure 16 25 ° C 2.5 V 2 pFcapacitance
Switch ON,Bandwidth BW R
L
= 50 Ω, 25 ° C 2.5 V 100 MHzSee Figure 19R
L
= 50 Ω, Switch OFF,OFF isolation O
ISO
25 ° C 2.5 V – 64 dBf = 1 MHz, See Figure 20R
L
= 50 Ω, Switch ON,Crosstalk X
TALK
25 ° C 2.5 V – 64 dBf = 1 MHz, See Figure 21Total harmonic R
L
= 600 Ω, f = 20 Hz to 20 kHz,THD 25 ° C 2.5 V 0.020 %distortion C
L
= 50 pF, See Figure 23
Supply
25 ° C 0.001 0.05Positive supply
I
+
V
I
= V
+
or GND, Switch ON or OFF 2.7 V µAcurrent
Full 0.15
Copyright © 2005 – 2008, Texas Instruments Incorporated Submit Documentation Feedback 9
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ELECTRICAL CHARACTERISTICS FOR 1.8-V SUPPLY
(1)
TS5A3153
SCDS215A – OCTOBER 2005 – REVISED JULY 2008 .....................................................................................................................................................
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V
+
= 1.65 V to 1.95 V, T
A
= – 40 ° C to 85 ° C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Analog
Switch
Analog signal V
COM
, V
NO
,
0 V
+
Vrange V
NC
25 ° C 5.2 15Peak ON 0 ≤(V
NO
or V
NC
)≤V
+
, Switch ON,r
peak
1.65 V Ωresistance I
COM
= – 2 mA, See Figure 13
Full 2025 ° C 2 2.7ON-state V
NO
or V
NC
= 1.5 V, Switch ON,r
on
1.65 V Ωresistance I
COM
= – 2 mA, See Figure 13
Full 3.1ON-state 25 ° C 0.16 0.3resistance
V
NO
or V
NC
= 1.5 V, Switch ON,matching Δr
on
1.65 V ΩI
COM
= – 2 mA, See Figure 13
Full 0.3between
channels
0≤(V
NO
or V
NC
)≤V
+
, Switch ON,
25 ° C 3ON-state
I
COM
= – 2 mA, See Figure 13resistance r
on(flat)
1.65 V Ω25 ° C 3 6V
NO
or V
NC
= 0.6 V, 1.5 V, Switch ON,flatness
I
COM
= – 2 mA, See Figure 13
Full 8V
NC
or V
NO
= 0.3 V, 25 ° C – 20 1.5 20V
COM
= 1.65 V,I
NC(OFF)
, Switch OFF,or 1.95 V nANC, NO
I
NO(OFF)
See Figure 14
Full – 50 50V
NC
or V
NO
= 1.65 V,OFF leakage
V
COM
= 0.3 V,current
25 ° C – 1 0.1 1I
NC(PWROFF)
, V
NC
or V
NO
= 0 to 1.95 V, Switch OFF,
0 V µAI
NO(PWROFF)
V
COM
= 1.95 V to 0, See Figure 14
Full – 10 10V
NC
or V
NO
= 0.3 V, 25 ° C – 20 1.5 20NC, NO V
COM
= Open,I
NC(ON)
, Switch ON,ON leakage or 1.95 V nAI
NO(ON)
See Figure 15
Full – 50 50current V
NC
or V
NO
= 1.65 V,V
COM
= Open,V
NC
or V
NO
= 1.65 V, 25 ° C – 20 1.5 20V
COM
= 0.3 V,
Switch OFF,I
COM(OFF)
or 1.95 V nACOM
See Figure 14
Full – 50 50V
NC
or V
N O
= 0.3 V,OFF leakage
V
COM
= 1.65 V,current
25 ° C – 1 0.06 1V
NC
or V
NO
= 1.95 V to 0, Switch OFF,I
COM(PWROFF)
0 V µAV
COM
= 0 to 1.95 V, See Figure 14
Full – 10 10V
NC
or V
NO
= Open, 25 ° C – 20 1.5 20COM V
COM
= 0.3 V,
Switch ON,ON leakage I
COM(ON)
or 1.95 V nASee Figure 15
Full – 50 50current V
NC
or V
NO
= Open,V
COM
= 1.65 V,
Digital Control Inputs (IN, EN)
(2)
Input logic high V
IH
Full 1.5 5.6 VInput logic low V
IL
Full 0 0.6 V25 ° C – 100 25 100Input leakage
I
IH
, I
IL
V
I
= 5.5 V or 0 1.95 V nAcurrent
Full – 100 100
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum(2) All unused digital inputs of the device must be held at V
+
or GND to ensure proper device operation. Refer to the TI application report,Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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..................................................................................................................................................... SCDS215A – OCTOBER 2005 – REVISED JULY 2008
ELECTRICAL CHARACTERISTICS FOR 1.8-V SUPPLY (continued)V
+
= 1.65 V to 1.95 V, T
A
= – 40 ° C to 85 ° C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Dynamic
25 ° C 5 V 4.5 45 61V
COM
= V
+
, C
L
= 35 pF,Turn-on time t
ON
ns1.65 V toR
L
= 50 Ω, See Figure 17
Full 4 631.95 V25 ° C 5 V 5.4 12 19V
COM
= V
+
, C
L
= 35 pF,Turn-off time t
OFF
ns1.65 V toR
L
= 50 Ω, See Figure 17
Full 5 211.95 V25 ° C 5 V 4 31 60Break-before- V
COM
= V
+
, C
L
= 35 pF,t
BBM
ns1.65 V tomake time R
L
= 50 Ω, See Figure 18
Full 3 651.95 VCharge V
GEN
= 0, C
L
= 1 nF,Q
C
25 ° C 1.8 V 4 pCinjection R
GEN
= 0, See Figure 22NC, NO
C
NC(OFF)
, Switch OFF,OFF V
NC
or V
NO
= V
+
or GND, 25 ° C 1.8 V 19 pFC
NO(OFF)
See Figure 16capacitance
NC, NO
C
NC(ON)
, Switch ON,ON V
NC
or V
NO
= V
+
or GND, 25 ° C 1.8 V 57 pFC
NO(ON)
See Figure 16capacitance
COM OFF Switch ON,C
COM(OFF)
V
COM
= V
+
or GND, 25 ° C 1.8 V 36 pFcapacitance See Figure 16COM ON Switch ON,C
COM(ON)
V
COM
= V
+
or GND, 25 ° C 1.8 V 57 pFcapacitance See Figure 16Digital input
C
I
V
I
= V
+
or GND, See Figure 16 25 ° C 1.8 V 2 pFcapacitance
Switch ON,Bandwidth BW R
L
= 50 Ω, 25 ° C 1.8 V 100 MHzSee Figure 19R
L
= 50 Ω, Switch OFF,OFF isolation O
ISO
25 ° C 1.8 V – 64 dBf = 1 MHz, See Figure 20R
L
= 50 Ω, Switch ON,Crosstalk X
TALK
25 ° C 1.8 V – 64 dBf = 1 MHz, See Figure 21f = 20 Hz to 20Total harmonic R
L
= 600 Ω,THD kHz, 25 ° C 1.8 V 0.060 %distortion C
L
= 50 pF,
See Figure 23
Supply
25 ° C 0.001 0.05Positive supply
I
+
V
I
= V
+
or GND, Switch ON or OFF 1.95 V µAcurrent
Full 0.1
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TYPICAL PERFORMANCE
r ( )
on Ω
T = 25°C
A
T = 85°C
A
r ( )
on Ω
T = 25°C
A
T = –40°C
A
0
5
10
15
20
25
30
35
40
45
50
TA(°C)
LeakageCurrent(nA)
−40 25 85
ICOM(OFF)
INO/NC(OFF)
ICOM(ON)
INO/NC(ON)
T = 85°C
A
r ( )
on Ω
T = 25°C
A
T = –40°C
A
−70
−60
−50
−40
−30
−20
−10
0
10
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VCOM (V)
ChargeInjection(Q)
C
V+=5V
V+=3V
0
10
20
30
40
50
0 1 2 3 4 5
V+(V)
tON/tOFF (ns)
tON
tOFF
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SCDS215A – OCTOBER 2005 – REVISED JULY 2008 .....................................................................................................................................................
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Figure 1. r
on
vs V
COM
Figure 2. r
on
vs V
COM
(V
+
= 3 V)
Figure 3. r
on
vs V
COM
(V
+
= 5 V) Figure 4. Leakage Current vs Temperature(V
+
= 5.5 V)
Figure 5. Charge Injection (Q
C
) vs V
COM
Figure 6. t
ON
and t
OFF
vs Supply Voltage
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0
2
4
6
8
10
12
14
16
−40 25 85
tON/tOFF (ns)
TA(C)
tON
tOFF
−14
−12
−10
−8
−6
−4
−2
0
Gain(dB)
0.1 1 100010 100
Frequency(Mhz)
−90
−80
−70
−60
−50
−40
−30
−20
−10
0
Gain(dB)
Frequency(MHz)
0.1 1 100010 100
0.000
0.001
0.002
0.003
0.004
0.005
0.006
0.007
0.008
0.009
0.010
0
THD +Noise(%)
Frequency(kHz)
0.001 0.1 1001 10
V+=3V
V+=5V
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..................................................................................................................................................... SCDS215A – OCTOBER 2005 – REVISED JULY 2008
TYPICAL PERFORMANCE (continued)
Figure 7. t
ON
and t
OFF
vs Temperature (V
+
= 5 V) Figure 8. Logic-Level Threshold vs V
+
Figure 9. Bandwidth (V
+
= 5 V) Figure 10. OFF Isolation and Crosstalk (V
+
= 5 V)
Figure 11. Total Harmonic Distortion (THD) Figure 12. Power Supply Current vs Temperaturevs Frequency (V
+
= 5 V)
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SCDS215A – OCTOBER 2005 – REVISED JULY 2008 .....................................................................................................................................................
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PIN DESCRIPTION
PIN NO. NAME DESCRIPTION
1 COM Common2 EN Enable control input3 GND Digital ground4 GND Digital ground5 IN Digital control to connect the COM to NO or NC6 NO Normally open7 NC Normally closed8 V
+
Power supply
PARAMETER DESCRIPTION
SYMBOL DESCRIPTION
V
COM
Voltage at COMV
NC
Voltage at NCV
NO
Voltage at NOr
on
Resistance between COM and NC or COM and NO ports when the channel is ONr
peak
Peak on-state resistance over a specified voltage range
Δr
on
Difference of r
on
between channels in a specific devicer
on(flat)
Difference between the maximum and minimum value of r
on
in a channel over the specified range of conditionsLeakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF state underI
NC(OFF)
worst-case input and output conditionsI
NC(PWROFF)
Leakage current measured at the NC port during the power-off condition, V
+
= 0Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state underI
NO(OFF)
worst-case input and output conditionsI
NO(PWROFF)
Leakage current measured at the NO port during the power-off condition, V
+
= 0Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the outputI
NC(ON)
(COM) openLeakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the outputI
NO(ON)
(COM) openLeakage current measured at the COM port, with the corresponding channel (COM to NO or COM to NC) in the ON stateI
COM(ON)
and the output (NC or NO) openLeakage current measured at the COM port, with the corresponding channel (COM to NO or COM to NC) in the OFFI
COM(OFF)
state and the output (NC or NO) openI
COM(PWROFF)
Leakage current measured at the COM port during the power-off condition, V
+
= 0V
IH
Minimum input voltage for logic high for the control input (IN, EN)V
IL
Maximum input voltage for logic low for the control input (IN, EN)V
I
Voltage at the control input (IN, EN)I
IH
, I
IL
Leakage current measured at the control input (IN, EN)Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagationt
ON
delay between the digital control (IN) signal and analog output (COM, NC, or NO) signal when the switch is turning ON.Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagationt
OFF
delay between the digital control (IN) signal and analog output (COM, NC, or NO) signal when the switch is turning OFF.Break-before-make time. This parameter is measured under the specified range of conditions and by the propagationt
BBM
delay between the output of two adjacent analog channels (NC and NO) when the control signal changes state.Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NC, NO, orCOM) output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the controlQ
C
input. Charge injection, Q
C
= C
L
×ΔV
COM
, C
L
is the load capacitance, and ΔV
COM
is the change in analog outputvoltage.C
NC(OFF)
Capacitance at the NC port when the corresponding channel (NC to COM) is OFFC
NO(OFF)
Capacitance at the NO port when the corresponding channel (NO to COM) is OFFC
NC(ON)
Capacitance at the NC port when the corresponding channel (NC to COM) is ONC
NO(ON)
Capacitance at the NO port when the corresponding channel (NO to COM) is ON
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PARAMETER MEASUREMENT INFORMATION
V+
ICOM
ron +VCOM *VNO or VNC
ICOM
W
GND
Channel ON
NC
VI
NO
COM VCOM
VI = VIH or VIL
VNO
VNC
+
+
IN or EN
Channel OFF
OFF-State Leakage Current
VI = VIH or VIL
V+
GND
NC
VI
NO
COM VCOM
VNO
VNC
+
+
+
IN or EN
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..................................................................................................................................................... SCDS215A – OCTOBER 2005 – REVISED JULY 2008
PARAMETER DESCRIPTION (continued)
SYMBOL DESCRIPTION
C
COM(ON)
Capacitance at the COM port when the corresponding channel (COM to NC or COM to NO) is ONC
COM(OFF)
Capacitance at the COM port when the corresponding channel (COM to NC or COM to NO) is OFFC
I
Capacitance of control input (IN)OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specificO
ISO
frequency, with the corresponding channel (NC to COM or NO to COM) in the OFF state.Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NC to NO or NO toX
TALK
NC). This is measured in a specific frequency and in dB.BW Bandwidth of the switch. This is the frequency where the gain of an ON channel is – 3 dB below the DC gain.Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio of rootTHD
mean square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of fundamental harmonic.I
+
Static power-supply current with the control (IN, EN) pin at V
+
or GND
Figure 13. ON-State Resistance (r
on
)
Figure 14. OFF-State Leakage Current (I
NC(OFF)
, I
NO(OFF)
, I
NO(PWROFF)
, I
COM(PWROFF)
)
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Channel ON
ON-State Leakage Current
VI = VIH or VIL
V+
GND
NC
VI
NO
COM VCOM
VNO
VNC
+
+
IN or EN
V+
GND
VBIAS VI
VI = VIH or VIL
VBIAS = V+ or GND
Capacitance is measured at NC,
NO, COM, and IN inputs during
ON and OFF conditions.
Capacitance
Meter
VCOM
VNO
VNC
COM
NO
NC
IN or EN
TS5A3153
SCDS215A – OCTOBER 2005 – REVISED JULY 2008 .....................................................................................................................................................
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PARAMETER MEASUREMENT INFORMATION (continued)
Figure 15. ON-State Leakage Current (I
COM(ON)
, I
NC(ON)
, I
NO(ON)
)
Figure 16. Capacitance (C
I
, C
COM(OFF)
, C
COM(ON)
, C
NC(OFF)
, C
NO(OFF)
, C
NC(ON)
, C
NO(ON)
)
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CL(2) RL
VCOM
V+
GND
NC or NO VNC or VNO
VI
NC or NO
COM
Logic
Input(1)
50 Ω
RLCL
35 pFtON
TEST
50 Ω35 pFtOFF
50%
tON tOFF
50%
90% 90%
Logic
Input
(VI)
V+
Switch
Output
(VNC or VNO)
0
IN or EN
(1) All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
(2) CL includes probe and jig capacitance.
VCOM
V+
V+
V+
GND
NC or NO
IN
VNC or VNO
VI
NC or NO COM VCOM
CL(2) RL
tBBM
50%
90% 90%
VNC or VNO = V+
RL = 50 Ω
CL = 35 pF
Logic
Input(1)
Logic
Input
(VI)
Switch
Output
(VCOM)
V+
0
(1) All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
(2) CL includes probe and jig capacitance.
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..................................................................................................................................................... SCDS215A – OCTOBER 2005 – REVISED JULY 2008
PARAMETER MEASUREMENT INFORMATION (continued)
Figure 17. Turn-On (t
ON
) and Turn-Off Time (t
OFF
)
Figure 18. Make-Before-Break Time (t
MBB
)
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V+
GND
NC
VI
NO
COM
50 W
50 W
VNC
VCOM
Channel ON: NC to COM
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50-W load)
DC Bias = 350 mV
Network Analyzer
Source
Signal
+
VI = V+ or GND
INor EN
NC
NO
COM
VNC
VCOM
Channel OFF: NC to COM
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50-W load)
DC Bias = 350 mV
50 W
V+
GND
50 W
50 W
Network Analyzer
Source
Signal
VI
+
VI = V+ or GND
IN or EN
NC
NO
50 W
50 W
VNC VCOM
Channel ON: NC to COM
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50-W load)
DC Bias = 350 mV
50 W
V+
GND
VNO
Source
Signal
Channel OFF: NO to COM
Network Analyzer
VI
+
VI = V+ or GND
IN or EN
TS5A3153
SCDS215A – OCTOBER 2005 – REVISED JULY 2008 .....................................................................................................................................................
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PARAMETER MEASUREMENT INFORMATION (continued)
Figure 19. Bandwidth (BW)
Figure 20. OFF Isolation (O
ISO
)
Figure 21. Crosstalk (X
TALK
)
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V+
GND
NC or NO
RGEN
VI
NC or NO
COM VCOM
CL(2)
OFF
VCOM
ON OFF
∆VCOM
VGEN +
VI = VIH or VIL
CL = 0.1 nF
VGEN = 0 to V+
RGEN = 0
QC = CL × ∆VCOM
Logic
Input(1)
VIH
VIL
Logic
Input
(VI)
IN or EN
(1) All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
(2) CL includes probe and jig capacitance.
V+
GND
NC
NO
COM
10 mF
CL(1)
RL
V+/2
10 mF
VI+
600 W600 W
600 W
Audio Analyzer
Source
Signal
RL = 600 Ω
CL = 50 pF
VSOURCE = V+ P-P fSOURCE = 20 Hz to 20 kHz
Channel ON: COM to NC VI = VIH or VIL
IN
(1) CL includes probe and jig capacitance.
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..................................................................................................................................................... SCDS215A – OCTOBER 2005 – REVISED JULY 2008
PARAMETER MEASUREMENT INFORMATION (continued)
Figure 22. Charge Injection (Q
C
)
Figure 23. Total Harmonic Distortion (THD)
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PACKAGING INFORMATION
Orderable Device Status (1) Package
Type Package
Drawing Pins Package
Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
TS5A3153DCUR ACTIVE US8 DCU 8 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TS5A3153DCURE4 ACTIVE US8 DCU 8 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TS5A3153DCURG4 ACTIVE US8 DCU 8 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TS5A3153YZPR ACTIVE DSBGA YZP 8 3000 Green (RoHS &
no Sb/Br) SNAGCU Level-1-260C-UNLIM
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
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PACKAGE OPTION ADDENDUM
www.ti.com 22-Jul-2008
Addendum-Page 1
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
TS5A3153DCUR US8 DCU 8 3000 180.0 8.4 2.25 3.35 1.05 4.0 8.0 Q3
TS5A3153YZPR DSBGA YZP 8 3000 180.0 8.4 1.02 2.02 0.63 4.0 8.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 6-May-2011
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TS5A3153DCUR US8 DCU 8 3000 202.0 201.0 28.0
TS5A3153YZPR DSBGA YZP 8 3000 220.0 220.0 34.0
PACKAGE MATERIALS INFORMATION
www.ti.com 6-May-2011
Pack Materials-Page 2
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