SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS lee,,e9 Ccnnl lAnu.nmc n Gii2 COMPLEMENTARY I TYPE - BCX51 - BCX54 BCX52 - BCX55 c BCX53 - BCX56 PARTMARKING BCX51 DETAILS - -AA BCX52 - AE BCX53-I O- AK E \@ c BCX53-I 6- AL BCX52-16-AM BCX51-16-AD - AH BCX53 BCX52-10-AG BCX51-10-AC B ABSOLUTE MAXIMUM SOT89 RATINGS. SYMBOL BCX51 BCX52 VCBO -45 -60 `CEO -45 -60 PARAMETER Collector-Base Voltage . Collector-Emitter Emitter-Base Voltage vEao Voltage Paak Pulse Current ICM Ic Continuous Collector Current ----. --_-- Power Dissipation at Tamb=250C UNIT -1oo v -80 v -5 v -1,5 A -1 Ptot ..-- BCX53 A 1 w Operating and Storage Temperature Range Ti:TS,O -65 to +150 ,. ELECTRICAL CHARACTERISTICS (at T~~h = 25C unless otherwise stated). PARAMETER -- Collector-Base Braakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown ---- Collector SYMBOL MIN. BCX53 BCX52 BCX51 V(aR)cao -1oo BCX53 BCX52 BCX51 v(aRlcEo -80 -60 -45 v(aR)Eao -5 Voltage Cut-Off TYP. MAX. -60 -45 Current Cut-Off Current -- Collector-Emitter Saturation Voltage ~ase-Emitt; r Turn-On Voltaae -0.1 ICBO -- I lEao `CE(sat) Current Frequency Capacitance under v IC=-l OmA* Ic =-10mA* Ic =-10mA' v IE=-IOWA PA PA Vca=-30V -20 nA vEa=-4V -0.5 v Ic =-500mA, Vca =-30V, IIc =-500mA, Tamb=l 50"C la =-50mA* VCE =-2V* ! h~~ ,-16 25 40 25 63 100 fT 150 -lo Output IC=-1 OOWA IC=-1OOKA IC=-1 OOKA -1.0 v ,V aE(On) --. `Measured v v v `a -`~ Emitter Transition CONDITIONS, a -20 Static Forward Transfer Ratio UNIT pulsed 160 250 Icabo conditions. i Ic Ilc Ic Ic Ic 250 25 MHz Ic =-50mA, f=100MHz VCE =-1OV, pF Vca =-IOV, f=l MHz Pulse width= 300~s. Duty cycle <2% 3-34 =-5mA, VCE =-2V* =-150mA, Vc, =-2V* =-500mA, VCE =-2V* =-150mA, VCE =-2V* =-150mA, VCE =-2V* "c