SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
lee,,e9CcnnllAnu.nmc nGii2
COMPLEMENTARY TYPE -BCX51 -BCX54 I
BCX52 -BCX55 c
BCX53 -BCX56
PARTMARKING DETAILS -
BCX51 -AA BCX52 -AE BCX53 -AH
BCX51-10-AC BCX52-10-AG BCX53-I O- AK \@ E
BCX51-16-AD BCX52-16-AM BCX53-I 6- AL c
B
ABSOLUTE MAXIMUM RATINGS. SOT89
PARAMETER SYMBOL BCX51 BCX52 BCX53 UNIT
Collector-Base Voltage VCBO -45 -60 -1oo v
.
Collector-Emitter Voltage ‘CEO -45 -60 -80 v
Emitter-Base Voltage vEao -5 v
Paak Pulse Current ICM -1,5 A
Continuous Collector Current Ic -1
——. —_— A
Power Dissipation at Tamb=250C Ptot 1w
..—
Operating and Storage Temperature Range Ti:TS,O -65 to +150 “c
,.
ELECTRICAL CHARACTERISTICS (at T~~h =25°C unless otherwise stated).
PARAMETER
-a
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS,
—
Collector-Base BCX53 V(aR)cao -1oo vIC
=-1 OOWA
Braakdown BCX52 -60 vIC
=-1OOKA
Voltage BCX51 -45 vIC
=-1 OOKA
Collector-Emitter BCX53 v(aRlcEo -80 v IC=-l OmA*
Breakdown BCX52 -60 Ic =-10mA*
Voltage BCX51 -45 Ic =-10mA’
Emitter-Base v(aR)Eao -5 vIE
=-IOWA
Breakdown Voltage
—— ‘a -‘~
Collector Cut-Off Current ICBO -0.1 PA Vca=-30V
-20 PA Vca =-30V, Tamb=l 50”C
Emitter Cut-Off Current IlEao -20 nA vEa=-4V
——
Collector-Emitter ‘CE(sat) -0.5 vIc =-500mA, la =-50mA*
Saturation Voltage
~ase-Emitt; r,V aE(On) -1.0 v I
Ic =-500mA, VCE =-2V*
Turn-On Voltaae
—. !
Static Forward Current h~~ 25 iIc =-5mA, VCE =-2V*
Transfer Ratio 40 250 Ilc =-150mA, Vc, =-2V*
25 Ic =-500mA, VCE =-2V*
-lo 63 160 Ic =-150mA, VCE =-2V*
,-16 100 250 Ic =-150mA, VCE =-2V*
Transition Frequency fT 150 MHz Ic =-50mA, VCE =-1OV,
f=100MHz
Output Capacitance Ic
abo 25 pF Vca =-IOV, f=l MHz
‘Measured under pulsed conditions. Pulse width= 300~s. Duty cycle <2%
3-34
