TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DEVICES LEVELS 2N5152 2N5152L 2N5152U3 2N5154 2N5154L 2N5154U3 JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 100 Vdc Emitter-Base Voltage VEBO 5.5 Vdc IC 2.0 Adc PT 1.0 10 W TJ , Tstg -65 to +200 C RJC 10 1.7 (U3) C/W Collector Current Total Power Dissipation (1) @ TA = +25C @ TC = +25C Operating & Storage Junction Temperature Range Thermal Resistance, Junction-to Case (1) Note: 1) 2) TO-5 2N5152L, 2N5154L See 19500/544 for thermal derating curves. This value applies for PW 8.3ms, duty cycle 1%. ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)CEO 80 Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 100mAdc, IB = 0 Vdc Emitter-Base Cutoff Current VEB = 4.0Vdc, IC = 0 VEB = 5.5Vdc, IC = 0 IEBO 1.0 1.0 Adc mAdc Collector-Emitter Cutoff Current VCE = 60Vdc, VBE = 0 VCE = 100Vdc, VBE = 0 ICES 1.0 1.0 Adc mAdc Collector-Emitter Cutoff Current VCE = 40Vdc, IB = 0 ICEO 50 Adc ON CHARACTERTICS Forward-Current Transfer Ratio IC = 50mAdc, VCE = 5Vdc IC = 2.5Adc, VCE = 5Vdc T4-LDS-0039 Rev. 1 (080797) 2N5152 2N5154 2N5152 2N5154 hFE 20 50 30 70 ----90 200 TO-39 (TO-205AD) 2N5152, 2N5154 U-3 2N5152U3, 2N5154U3 Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 ELECTRICAL CHARACTERISTICS (con't) Parameters / Test Conditions IC = 5Adc, VCE = 5Vdc 2N5152 2N5154 Symbol Min. hFE 20 40 Max. Unit Collector-Emitter Saturation Voltage IC = 2.5Adc, IB = 250mAdc IC = 5.0Adc, IB = 500mAdc VCE(sat) 0.75 1.5 Vdc Base-Emitter Voltage Non-Saturation IC = 2.5Adc, VCE = 5Vdc VBE 1.45 Vdc VBE(sat) 1.45 2.2 Vdc Max. Unit 250 pF Max. Unit Base-Emitter Saturation Voltage IC = 2.5Adc, IB = 250mAdc IC = 5.0Adc, IB = 500mAdc DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 500mAdc, VCE = 5Vdc, f = 10MHz 2N5152 2N5154 Small-signal short Circuit Forward-Current Transfer Ratio IC = 100mAdc, VCE = 5Vdc, f = 1KHz 2N5152 2N5154 Output Capacitance VCB = 10Vdc, IE = 0, f = 1.0MHz Symbol Min. |hfe| 6 7 hfe 20 50 Cobo SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Turn-On Time IC = 5Adc, IB1 = 500mAdc ton 0.5 s Turn-Off Time RL = 6 toff 1.5 s Storage Time IB2 = -500mAdc ts 1.4 s Fall Time VBE(OFF) = 3.7Vdc tf 0.5 s SAFE OPERATING AREA DC Tests TC = +25C, 1 Cycle, tP = 1.0s Test 1 VCE = 5.0Vdc, IC = 2.0Adc Test 2 VCE = 32Vdc, IC = 310mAdc Test 3 VCE = 80Vdc, IC = 12.5mAdc T4-LDS-0039 Rev. 1 (080797) Page 2 of 2