BD179G Plastic Medium-Power Silicon NPN Transistor This device is designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features http://onsemi.com * High DC Current Gain * BD179 is complementary with BD180 * These Devices are Pb-Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 3.0 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 30 240 W mW/_C -65 to +150 _C Operating and Storage Junction Temperature Range TJ, Tstg 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS, 30 WATTS COLLECTOR 2 3 BASE 1 EMITTER Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. TO-225 CASE 77 STYLE 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Case RqJC 4.16 _C/W 3 2 1 MARKING DIAGRAM YWW BD179G Y WW BD179 G = Year = Work Week = Device Code = Pb-Free Package ORDERING INFORMATION Device *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2013 Noember, 2013 - Rev. 15 1 BD179G Package Shipping TO-225 (Pb-Free) 500 Units/Box Publication Order Number: BD179/D BD179G ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Collector-Emitter Sustaining Voltage (Note 1) (IC = 0.1 Adc, IB = 0) V(BR)CEO Collector Cutoff Current (VCB = 80 Vdc, IE = 0) ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO DC Current Gain (IC = 0.15 A, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) hFE Collector-Emitter Saturation Voltage (Note 1) (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) Base-Emitter On Voltage (Note 1) (IC = 1.0 Adc, VCE = 2.0 Vdc) VBE(on) Current-Gain - Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) fT Min Max 80 - - 0.1 - 1.0 63 15 160 - - 0.8 - 1.3 3.0 - Unit Vdc mAdc mAdc - Vdc Vdc MHz 1. Pulse Test: Pulse Width 300 As, Duty Cycle 2.0%. 10 IC, COLLECTOR CURRENT (AMP) 5.0 3.0 2.0 1.0 ms 5.0 ms dc 1.0 0.7 0.5 TJ = 150C SECONDARY BREAKDOWN LIMITATION THERMAL LIMITATION (BASE-EMITTER DISSIPATION IS SIGNIFICANT ABOVE IC = 2.0 AMP) PULSE DUTY CYCLE < 10% 0.3 0.2 0.1 The Safe Operating Area Curves indicate IC - VCE limits below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To insure operation below the maximum TJ, power-temperature derating must be observed for both steady state and pulse power conditions. 100 ms 7.0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. Active Region Safe Operating Area http://onsemi.com 2 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) BD179G 1.0 0.8 IC = 0.1 A 0.25 A 0.5 A 1.0 A 0.6 TJ = 25C 0.4 0.2 0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IB, BASE CURRENT (mA) 20 30 100 50 200 1000 700 500 1.5 VCE = 2.0 V 1.2 300 200 100 70 50 TJ = + 150C 30 20 TJ = + 55C TJ = + 25C r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.9 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2.0 V 0.3 10 0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (mA) 20 30 50 100 200 300 500 1000 2000 IC, COLLECTOR CURRENT (mA) Figure 3. Current Gain Figure 4. "On" Voltages 20 30 50 100 200 300 500 1000 2000 10 D = 0.5 0.3 0.2 D = 0.2 0.1 0.07 0.05 D = 0.05 D = 0.1 SINGLE PULSE qJC(t) = r(t) qJC qJC = 4.16C/W MAX qJC = 3.5C/W TYP D = 0.01 P(pk) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.03 0.02 0.01 0.01 TJ = 25C VCE(sat) @ IC/IB = 10 10 2.0 3.0 5.0 1.0 0.7 0.5 VOLTAGE (VOLTS) hFE, DC CURRENT GAIN (NORMALIZED) Figure 2. Collector Saturation Region 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME or PULSE WIDTH (ms) Figure 5. Thermal Response http://onsemi.com 3 20 30 50 t1 t2 DUTY CYCLE, D = t1/t2 100 200 300 500 1000 BD179G PACKAGE DIMENSIONS TO-225 CASE 77-09 ISSUE AB E A1 Q NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. NUMBER AND SHAPE OF LUGS OPTIONAL. A DIM A A1 b b2 c D E e L L1 P Q D P 1 2 3 L1 MILLIMETERS MIN MAX 2.40 3.00 1.00 1.50 0.60 0.90 0.51 0.88 0.39 0.63 10.60 11.10 7.40 7.80 2.04 2.54 14.50 16.63 1.27 2.54 2.90 3.30 3.80 4.20 L STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE 2X b2 2X e b c ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. 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