© Semiconductor Components Industries, LLC, 2006
March, 2006 Rev. 3
1Publication Order Number:
P2N2222A/D
P2N2222A
Amplifier Transistors
NPN Silicon
Features
PbFree Packages are Available*
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic Symbol Value Unit
CollectorEmitter Voltage VCEO 40 Vdc
CollectorBase Voltage VCBO 75 Vdc
EmitterBase Voltage VEBO 6.0 Vdc
Collector Current Continuous IC600 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg 55 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 200 °C/W
Thermal Resistance, Junction to Case RqJC 83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO92
(T0226AA)
CASE 2911
STYLE 17
MARKING
DIAGRAM
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(Note: Microdot may be in either location)
123
P2N2
222A
AYWW G
G
P2N2 = Device Code
222A = Specific Device
A = Assembly Location
Y = Year
WW = Work Week
G= PbFree Package
P2N2222ARL1 TO92
5000 Units / Bulk
P2N2222ARL1G TO92
(PbFree)
5000 Units / Bulk
Device Package Shipping
P2N2222A TO92
2000 / Tape & Ammo
P2N2222AG TO92
(PbFree)
2000 / Tape & Ammo
ORDERING INFORMATION
COLLECTOR
1
2
BASE
3
EMITTER
P2N2222AZL1 TO92
P2N2222AZL1G TO92
(PbFree)
2000 / Tape & Reel
2000 Units / Tube
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
P2N2222A
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO 40 Vdc
CollectorBase Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO 75 Vdc
EmitterBase Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO 6.0 Vdc
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
ICEX 10 nAdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 150°C)
ICBO
0.01
10
mAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO 10 nAdc
Collector Cutoff Current
(VCE = 10 V)
ICEO 10 nAdc
Base Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
IBEX 20 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = 55°C)
(IC = 150 mAdc, VCE = 10 Vdc) (Note 1)
(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 1)
(IC = 500 mAdc, VCE = 10 Vdc) (Note 1)
hFE 35
50
75
35
100
50
40
300
CollectorEmitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
0.3
1.0
Vdc
BaseEmitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat) 0.6
1.2
2.0
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (Note 2)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)C
fT300 MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo 8.0 pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo 25 pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hie 2.0
0.25
8.0
1.25
kW
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hre
8.0
4.0
X 104
SmallSignal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe 50
75
300
375
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hoe 5.0
25
35
200
mMhos
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
rbCc150 ps
Noise Figure
(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz)
NF4.0 dB
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
P2N2222A
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3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
SWITCHING CHARACTERISTICS
Delay Time (VCC = 30 Vdc, VBE(off) = 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1)
td10 ns
Rise Time tr25 ns
Storage Time (VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc) (Figure 2)
ts225 ns
Fall Time tf60 ns
Figure 1. TurnOn Time Figure 2. TurnOff Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4 ns
*Total shunt capacitance of test jig,
connectors, and oscilloscope.
+16 V
−2 V < 2 ns
0
1.0 to 100 ms,
DUTY CYCLE 2.0%
1 kW
+30 V
200
CS* < 10 pF
+16 V
−14 V
0
< 20 ns
1.0 to 100 ms,
DUTY CYCLE 2.0%
1 k
+30 V
200
CS* < 10 pF
−4 V
1N914
1000
10
20
30
50
70
100
200
300
500
700
1.0 k0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAINVCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
TJ = 125°C
TJ = 25°C
25°C
−55°C
IC = 1.0 mA 10 mA 150 mA 500 mA
VCE = 1.0 V
VCE = 10 V
Figure 4. DC Current Gain
P2N2222A
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4
Figure 5. TurnOn Time
IC, COLLECTOR CURRENT (mA)
70
100
200
50
t, TIME (ns)
10 20 70
5.0
100
5.0 7.0 30 50 200
10
30
7.0
20
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
3.0
2.0
300 500
500
t, TIME (ns)
5.0
7.0
10
20
30
50
70
100
200
300
Figure 6. TurnOff Time
IC, COLLECTOR CURRENT (mA)
10 20 70 1005.0 7.0 30 50 200 300 500
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
ts = ts − 1/8 tf
tf
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
4.0
6.0
8.0
10
2.0
0.1
Figure 8. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
NF, NOISE FIGURE (dB)
1.0 2.0 5.0 10 20 50
0.2 0.5
0
100
NF, NOISE FIGURE (dB)
0.01 0.02 0.05
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
IC = 1.0 mA, RS = 150 W
500 mA, RS = 200 W
100 mA, RS = 2.0 kW
50 mA, RS = 4.0 kW
f = 1.0 kHz
IC = 50 mA
100 mA
500 mA
1.0 mA
4.0
6.0
8.0
10
2.0
0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
Figure 9. Capacitances
REVERSE VOLTAGE (VOLTS)
3.0
5.0
7.0
10
2.0
0.1
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20 30 50
0.2 0.3 0.5 0.7
Ccb
20
30
Ceb
Figure 10. CurrentGain Bandwidth Product
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
500
fT, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VCE = 20 V
TJ = 25°C
P2N2222A
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5
Figure 11. “On” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
V, VOLTAGE (VOLTS)
0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
Figure 12. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
−0.5
0
+0.5
COEFFICIENT (mV/ C)
−1.0
−1.5
−2.5
°
RqVC for VCE(sat)
RqVB for VBE
0.1 1.0 2.0 5.0 10 20 50
0.2 0.5 100 200 500 1.0 k
1.0 V
−2.0
0.1 1.0 2.0 5.0 10 20 500.2 0.5 100 200 500
P2N2222A
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6
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
R
A
P
J
L
B
K
G
H
SECTION XX
C
V
D
N
N
XX
SEATING
PLANE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 −−− 12.70 −−−
L0.250 −−− 6.35 −−−
N0.080 0.105 2.04 2.66
P−−− 0.100 −−− 2.54
R0.115 −−− 2.93 −−−
V0.135 −−− 3.43 −−−
1
TO92 (TO226)
CASE 2911
ISSUE AL
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P2N2222A/D
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