AAMOSPEC NPN SILICON POWER TRANSISTORS ... designed for use in low frequency power amplifier applications FEATURES: * Low Collector-Emitter Saturation Voltage Voce;say= 1-0V(Max) @1_=2.0A,1,=0.2A * DC Current Gain hFE= 35-320@I,= 0.5A * Complememtary to PNP 2SA671 MAXIMUM RATINGS NPN 2SC1061 3.0 AMPERE POWER TRANASISTORS 50 VOLTS 25 WATTS TO-220 Characteristic Symbol 2801061 Unit Collector-Emitter Voltage VoEo 50 V Collector-Base Voltage Vego 50 V Emitter-Base Voltage Vepo 4.0 Collector Current - Continuous le 3.0 A - Peak lom 8.0 Base current Ip 0.5 A Total Power Dissipation @T, = 25C Pp 25 Ww Derate above 25C 0.2 wrc Operating and Storage Junction T) Tst C Temperature Range -55 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case R8jc 5.0 C FIGURE -1 POWER DERATING 30 e < 25 5 o 20 < & 15 o a & 10 & 5 a 0 0 29 50 75 100 125 150 Te , TEMPERATURE(C) H ae ET 2% I A 3 i 4. = r PIN 1.BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR(CASE) MILLIMETERS DIM MIN MAX A 1468 | 15.31 B 9.78 | 10.42 c 5.01 6.52 D 13.06 | 14.62 E 3.57 4.07 F 2.42 3.66 G 41.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 oO 3.70 3.902SC1061 NPN a ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage ViBR)cEO Vv (1,= 50 mA, I,=0 ) 50 Collector-Base Breakdown Voltage ViBR)cBo Vv (1,= 5.0 mA, I= 0 ) 50 Emitter-Base BreakdownVoltage ViBREBO Vv (lg= 5.0 mA, I,= 0) 4.0 Collector Cutoff Current lego uA ( Vep= 25 V, I= 0) 100 Emitter Cutoff Current leso uA ( Veg= 4-0V, I,= 0) 100 ON CHARACTERISTICS (1) DC Current Gain (l= 0.1 A, Veg= 4.0 V ) hFE(2) 35 (lg= 1.0 A, Veg= 4.0 V ) hFE(3) 35 320 Collector-Emitter Saturation Voltage Vee{sat) Vv (lo= 2.0 A, I,= 200 mA ) 1.0 Base-Emitter On Voltage Vee(on) Vv (Ik= 1.0 A, Veg=4.0 V) 1.5 DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product f; MHz (lp = 0.5 A, Veg = 4.0 V, f = 1.0 MHz ) 5.0 (1) Pulse Test: Pulse Width =300 us,Duty Cycle = 2.0% * hFE(3) Classification : [35 A 70 | 60 B 120 | 100 C 200|160 D 3202SC1061 NPN a Ic - Vee ACTIVE-REGION SAFE OPERATING AREA (SOA) ic , COLLECTOR CURRENT (A) - Bondng Wire Limt Second Breakdown Limit Thermally Limited at T .=25C (Single Puse} Ip=0 To28C 2.0 4.0 6.0 8.0 10 Vee , COLLECTOR-EMITTER VOLTAGE (V) lc , COLLECTOR CURRENT (Amp) 20 30 50 7.0 40 20 30 50 70 = 100 Vce , COLLECTOR EMITTER VOLTAGE (VOLTS) Ic - Vbe There are two limitation on the power handling ability Vce=4.0V of a transistor:average junction temperature and second breakdown safe operating area curves indicate lo-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of SOA curve is base on Tyyeq=150 C;T is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided TypgS150C,At high case temperatures, thermal limita - tion will reduce the power that can be handied to values less than the limitations imposed by second breakdown. fe , COLLECTOR CURRENT (A) 0 05 4.0 15 Vee, BASE - EMITTER VOLTAGE (V) DC CURRENT GAIN hre , DC CURRENT GAIN 0.01 0.02 0.03 0.05 0.1 02 03 05 1.0 3.0 lc , COLLECTOR CURRENT (AMP)