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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQD18N20V2 N-Channel QFET(R) MOSFET 200 V, 15 A, 140 m Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. * 15 A, 200 V, RDS(on) = 140 m (Max.) @ VGS = 10 V, ID = 7.5 A * Low Gate Charge (Typ. 20 nC) * Low Crss (Typ. 25 pF) * 100% Avalanche Tested D D G S G D-PAK S Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current FQD18N20V2TM 200 Unit V 15 A - Continuous (TC = 100C) IDM Drain Current VGSS Gate-Source Voltage EAS IAR EAR dv/dt PD (Note 1) A 60 A 30 V Single Pulsed Avalanche Energy (Note 2) 340 mJ Avalanche Current (Note 1) 15 A Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25C) * (Note 1) 8.3 6.5 2.5 mJ V/ns W 83 0.67 -55 to +150 W W/C C 300 C (Note 3) Power Dissipation (TC = 25C) TJ, TSTG TL - Pulsed 9.75 - Derate above 25C Operating and Storage Temperature Range Maximum Lead Lemperature for Loldering, 1/8" from Case for 5 Seconds. Thermal Characteristics Symbol RJC RJA Parameter FQD18N20V2TM Thermal Resistance, Junction to Case, Max. 1.5 Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110 2 Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. (c)2009 Fairchild Semiconductor Corporation FQD18N20V2 Rev. 1.6 1 Unit oC/W 50 www.fairchildsemi.com FQD18N20V2 -- N-Channel QFET(R) MOSFET April 2016 Part Number Top Mark DV218N20 FQD18N20V2TM Electrical Characteristics Symbol Package DPAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units TC = 25C unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit 200 -- -- V -- V/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C -- 0.25 IDSS Zero Gate Voltage Drain Current VDS = 200 V, VGS = 0 V -- -- 1 A VDS = 160 V, TC = 125C -- -- 10 A IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 3.0 -- 5.0 V On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 7.5 A -- 0.12 0.14 gFS Forward Transconductance VDS = 40 V, ID = 7.5 A -- 11 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 830 1080 pF -- 200 260 pF -- 25 33 pF -- 70 -- pF -- 135 -- pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Coss eff. Effective Output Capacitance VDS = 160 V, VGS = 0 V, f = 1.0 MHz VDS = 0V to 160 V, VGS = 0 V Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge RG Gate Resistance VDD = 100 V, ID = 18 A, RG = 25 (Note 4) VDS = 160 V, ID = 18 A, VGS = 10 V (Note 4) f= 1MHz -- 16 40 ns -- 133 275 ns -- 38 85 ns -- 62 135 ns -- 20 26 nC -- 5.6 -- nC -- 10 -- nC 0.5 -- 2.5 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 15 ISM -- -- 60 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 15 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time 158 -- ns Reverse Recovery Charge VGS = 0 V, IS = 18 A, dIF / dt = 100 A/s -- Qrr -- 1.0 -- C Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 1.58 mH, IAS = 18 A, VDD = 50 V, RG = 25 , starting TJ = 25C. 3. ISD 18 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C. 4. Essentially independent of operating temperature. (c)2009 Fairchild Semiconductor Corporation FQD18N20V2 Rev. 1.6 2 www.fairchildsemi.com FQD18N20V2 -- N-Channel QFET(R) MOSFET Package Marking and Ordering Information VGS Top : 15.0 V 10.0 V ID, Drain Current [A] 10 8.0 V 1 7.0 V 1 ID , Drain Current [A] 6.5 V 6.0 V Bottom : 10 5.5 V 0 Notes : 10 -1 150 10 25 -55 0 10 1. 250 s Pulse Test Notes : 1. VDS = 40V 2. 250 s Pulse Test 2. TC = 25 10 -1 10 0 10 1 -1 10 VDS, Drain-Source Voltage [V] 4 5 Figure 1. On-Region Characteristics 6 7 8 9 VGS , Gate-Source Voltage [V] 10 Figure 2. Transfer Characteristics 0.4 VGS = 10V IDR , Reverse Drain Current [A] R DS(ON) [ ], Drain-Source On-Resistance 0.5 1 10 VGS = 20V 0.3 0.2 0 10 0.1 150 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test Note : TJ = 25 0.0 0 10 20 30 40 50 60 -1 10 ID, Drain Current [A] 0.2 0.6 0.8 1.0 1.2 1.4 1.6 VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 2500 Ciss = C gs + Cgd (Cds = shorted) VDS = 40V Coss = Cds + Cgd 10 VGS , Gate-Source Voltage [V] Crss = C gd 2000 Capacitance [pF] 0.4 Notes : 1500 1. VGS = 0 V 2. f = 1 MHz Ciss 1000 Coss 500 Crss 0 -1 10 VDS = 100V VDS = 160V 8 6 4 2 Note : ID = 18A 10 0 10 1 0 VDS, Drain-Source Voltage [V] 5 10 15 20 25 QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics (c)2009 Fairchild Semiconductor Corporation FQD18N20V2 Rev. 1.6 0 Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com FQD18N20V2 -- N-Channel QFET(R) MOSFET Typical Characteristics (Continued) 3.0 2.5 R DS(ON) , (Normalized) 1.1 1.0 Notes : 0.9 1. VGS = 0 V 2. ID = 250 A 0.8 -100 -50 0 50 100 150 Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 Notes : 0.5 1. VGS = 10 V 2. ID = 7.5 A 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 20 is Limited by R DS(on) 2 15 ID, Drain Current [A] ID , Drain Current [A] 200 Figure 8. On-Resistance Variation vs. Temperature 100 us 1 ms 1 10 ms DC 10 150 TJ, Junction Temperature [ C] Operation in This Area 10 100 o Figure 7. Breakdown Voltage Variation vs. Temperature 10 50 0 Notes : o 1. TC = 25 C 10 5 o 2. TJ = 150 C 3. Single Pulse 0 25 -1 10 0 1 10 10 10 2 50 75 ZJC(t), Thermal Response [oC/W] D = 0 .5 0 .2 N o te s : -1 1. Z JC (t) = 1 .5 /W M a x . 2 . D u ty F a c to r, D = t1 /t2 0 .0 2 0 .0 1 3. T -5 JM - T C = P * Z D M JC (t) PDM t1 -2 10 0 .0 5 s in g le p u ls e 10 150 0 0 .1 10 125 Figure 10. Maximum Drain Current vs. Case Temperature Figure 9. Maximum Safe Operating Area 10 100 TC, Case Temperature [] VDS, Drain-Source Voltage [V] 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t1 , S q u a r e W a v e P u ls e D u r a t io n [s e c ] Figure 11. Transient Thermal Response Curve (c)2009 Fairchild Semiconductor Corporation FQD18N20V2 Rev. 1.6 4 www.fairchildsemi.com FQD18N20V2 -- N-Channel QFET(R) MOSFET Typical Characteristics FQD18N20V2 -- N-Channel QFET(R) MOSFET 200nF 12V VGS Same Type as DUT 50K Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on t off tf Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp Time tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms (c)2009 Fairchild Semiconductor Corporation FQD18N20V2 Rev. 1.6 5 www.fairchildsemi.com + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms (c)2009 Fairchild Semiconductor Corporation FQD18N20V2 Rev. 1.6 6 www.fairchildsemi.com FQD18N20V2 -- N-Channel QFET(R) MOSFET DUT ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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