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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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1.6
FQD18N20V2 Rev.
Thermal Characteristics
FQD18N20V2
N-Channel QFET® MOSFET
200 V, 15 A, 140 mΩ
Description
©2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
1
FQD18N20V2 — N-Channel QFET® MOSFET
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
•15 A, 200 V, RDS(on) = 140 mΩ (Max.) @ VGS = 10 V,
ID = 7.5 A
•Low Gate Charge (Typ. 20 nC)
•Low Crss (Typ. 25 pF)
• 100% Avalanche Tested
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
D-PAK
G
S
D
G
S
D
Symbol Parameter FQD18N20V2TM Unit
RJC Thermal Resistance, Junction to Case, Max. 1.5
oC/W
RJA
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max. 50
Symbol Parameter FQD18N20V2TM Unit
VDSS Drain-Source Voltage 200 V
IDDrain Current - Continuous (TC = 25°C) 15 A
- Continuous (TC = 100°C) 9.75 A
IDM Drain Current - Pulsed (Note 1) 60 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 340 mJ
IAR Avalanche Current (Note 1) 15 A
EAR Repetitive Avalanche Energy (Note 1) 8.3 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.5 V/ns
PDPower Dissipation (TA = 25°C) * 2.5 W
Power Dissipation (TC = 25°C) 83 W
- Derate above 25°C 0.67 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL
Maximum Lead Lemperature for Loldering,
1/8" from Case for 5 Seconds. 300 °C
April 2016
Package Marking and Ordering Information
www.fairchildsemi.com
2
FQD18N20V2 — N-Channel QFET® MOSFET
Part Number Top Mark Package Reel Size Tape Width Quantity
DV218N20
FQD18N20V2TM DPAK 330 mm 16 mm 2500 units
Packing Method
Tape and Reel
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA200 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C -- 0.25 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 200 V, VGS = 0 V -- -- 1 µA
VDS = 160 V, TC = 125°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA3.0 -- 5.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 7.5 A -- 0.12 0.14 Ω
gFS Forward Transconductance VDS = 40 V, ID = 7.5 A -- 11 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 830 1080 pF
Coss Output Capacitance -- 200 260 pF
Crss Reverse Transfer Capacitance -- 25 33 pF
Coss Output Capacitance VDS = 160 V, VGS = 0 V,
f = 1.0 MHz -- 70 -- pF
Coss eff. Effective Output Capacitance VDS = 0V to 160 V, VGS = 0 V -- 135 -- pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 100 V, ID = 18 A,
RG = 25 Ω
(Note 4)
-- 16 40 ns
trTurn-On Rise Time -- 133 275 ns
td(off) Turn-Off Delay Time -- 38 85 ns
tfTurn-Off Fall Time -- 62 135 ns
QgTotal Gate Charge VDS = 160 V, ID = 18 A,
VGS = 10 V
(Note 4)
-- 20 26 nC
Qgs Gate-Source Charge -- 5.6 -- nC
Qgd Gate-Drain Charge -- 10 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 15 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 15 A -- -- 1.5 V
trr Reverse Recovery Time VGS = 0 V, IS = 18 A,
dIF / dt = 100 A/µs
-- 158 -- ns
Qrr Reverse Recovery Charge -- 1.0 -- µC
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 1.58 mH, IAS = 18 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 18 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
RGGate Resistance f= 1MHz
--
Ω
1.6
FQD18N20V2 Rev.
©2009 Fairchild Semiconductor Corporation
2.5
0.5
www.fairchildsemi.com
3
FQD18N20V2 — N-Channel QFET® MOSFET
Typical Characteristics
0 5 10 15 20 25
0
2
4
6
8
10
12
VDS = 100V
VDS = 40V
VDS = 160V
※ Note : ID
= 18A
VGS , Gate-Source Voltage [V]
10-1 100101
0
500
1000
1500
2000
2500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
10-1
100
101
25℃
150℃
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
IDR , Reverse Drain Current [A]
V
SD , Source-Drain Voltage [V]
0 1020 03 04 5060
0.0
0.1
0.2
0.3
0.4
0.5
VGS = 20V
VGS = 10V
※ Note : TJ = 25℃
RDS(ON) [Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
10-1 100101
10-1
100
101
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Q
G
, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
54 6 87 910
10-1
100
101
※
Notes :
1. VDS = 40V
2. 250μs Pulse Test
-55℃
150℃
25℃
ID , Drain Current [A]
1.6
FQD18N20V2 Rev.
©2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
4
FQD18N20V2 — N-Channel QFET® MOSFET
Typical Characteristics
ZJC(t), Thermal Response [oC/W]
(Continued)
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
※ Notes :
1 . Z θJC(t) = 1.5 ℃/W M a x .
2 . D u ty F a cto r, D = t1/t2
3 . T JM - T C = P DM * Z θJC(t)
s gin le pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t1, Square W ave Pulse Duration [sec]
25 50 75 100 125 150
0
5
10
15
20
ID, Drain Current [A]
TC, Case Temperature [℃]
100101102
10-1
100
101
102
DC
10 ms
ms1
100 us
Operation in This Area
is Limited by R DS(on)
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Figure 11. Tr ans i ent Ther m al Res pons e Cur ve
t1
PDM
t2
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
※ Notes :
1. VGS = 10 V
2. ID = 7.5 A
RDS(ON) , (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
※ Notes :
1. VGS = 0 V
2. ID = 250 μA
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figu re 7. Br ea kdown Voltage Variation
vs. Temperature Figure 8. On-Resistanc e Va riation
vs. Temperature
Figure 10. Maximu m Drain Curr ent
vs. Case Temperature
1.6
FQD18N20V2 Rev.
©2009 Fairchild Semiconductor Corporation
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
VGS
VGS
IG = const.
www.fairchildsemi.com
5
FQD18N20V2 — N-Channel QFET® MOSFET
1.6
FQD18N20V2 Rev.
©2009 Fairchild Semiconductor Corporation
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
www.fairchildsemi.com
6
FQD18N20V2 — N-Channel QFET® MOSFET
1.6
FQD18N20V2 Rev.
©2009 Fairchild Semiconductor Corporation
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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