CM100MXA-24S - Mitsubishi Electric & Electronics USA, Inc.

Publication Date : August 2013 1

< IGBT MODULES >

CM100MXA-24S

HIGH POWER SWITCHING USE

NSULATED TYPE

Collector current IC .............….......................… 100A

Collector-emitter voltage VCES ......................… 1200V

Maximum junction temperature Tjmax .............. 175°C

●Flat base Type

●Copper base plate

●Ti n plating pin terminals

●RoHS Directive compliant

CIB (Converter+Inverter+Chopper Brake)

●Recognized under UL1557, File E323585

APPLICATION

AC Motor Control, Motion/Servo Co ntrol, Power supply, etc.

OUTLINE DRAWING & INTERNAL CONNECTION Dimension in mm

TERMINAL

t=0.8

SECTION A

INTERNAL CONNECTION

Tolerance otherwise specified

Division of Dimension Tolerance

0.5 to 3 ±0.2

over 3 to 6 ±0.3

over 6 to 30 ±0.5

over 30 to 120 ±0.8

over 120 to 400 ±1.2

P1(48~49)

N1(44~45)

GUP(13)

U(14~15)

GUN(40)

TH1(29)

TH2(28)

GVP(18)

V(19~20)

GVN(33)

GWP(23)

W(24~25)

GWN(31)

B(52~53)

GB(41)

NTC

ClampDi

P(54~56)

N(59~61)

R(1~2)

S(5~6)

T(9~10)

Es(32)

Es'(39)

Caution: Each (two or three) pin terminal of P/N/P1/N1/U/V/W/B/R/S/T is connected in the module,

but should use all each three pins for the external wiring.

The tolerance of size between

terminals is assumed to be ±0.4.

< IGBT MODULES >

CM100MXA-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : August 2013 2

ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)

INVERTER PART IGBT/DIODE

Symbol Item Conditions Rating Unit

VCES Collector-emitter voltage G-E short-circuited 1200 V

VGES Gate-emitter voltage C-E short-circuited ± 20 V

IC DC, TC=119 °C (Note2, 4) 100

ICRM Collector current Pulse, Repetitive (Note3) 200

Ptot Total power dissipation TC=25 °C (Note2, 4) 750 W

IE (Note1) (Note2) 100

IERM (Note1) Emitter current Pulse, Repetitive (Note3) 200

Tjmax Maximum junction temperature Instantaneous event (overload) 175 °C

BRAKE PART IGBT/DIODE

Symbol Item Conditions Rating Unit

VCES Collector-emitter voltage G-E short-circuited 1200 V

VGES Gate-emitter voltage C-E short-circuited ± 20 V

IC DC, TC=125 °C (Note2, 4) 50

ICRM Collector current Pulse, Repetitive (Note3) 100

Ptot Total power dissipation TC=25 °C (Note2, 4) 425 W

VRRM Repetitive peak reverse voltage G-E short-circuited 1200 V

IF (Note2) 50

IFRM Forward current Pulse, Repetitive (Note3) 100

Tjmax Maximum junction temperature Instantaneous event (overload) 175 °C

CONVERTER PART DIODE

Symbol Item Conditions Rating Unit

VRRM Repetitive peak reverse voltage - 1600 V

Ea Recommended AC input voltage RMS 440 V

IO DC output current 3-phase full wave rectifying, TC=125 °C (Note4) 100 A

The sine half wave 1 cycle peak value,

IFSM Surge forward current f=60 Hz, non-repetitive 1000 A

I2t Current square time Value for one cycle of surge current 4160 A2s

Tjmax Maximum junction temperature Instantaneous event (overload) 150 °C

MODULE

Symbol Item Conditions Rating Unit

Visol Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 2500 V

TCmax Maximum case temperature (Note4) 125 °C

Tjop Operating junction temperature Continuous operation (under switching) -40 ~ +150

Tstg Storage temperature - -40 ~ +125 °C

MECHANICAL CHARACTER IST ICS Limits

Symbol Item Conditions

Min. Typ. Max.

Unit

Ms Mounting torque Mounting to heat sink M 5 screw 2.5 3.0 3.5 N·m

Terminal to terminal 6.47 - -

ds Creepage distance Terminal to base plate 14.27 - - mm

Terminal to terminal 6.47 - -

da Clearance Terminal to base plate 12.33 - - mm

m mass - - 300 - g

ec Flatness of base plate On the centerline X, Y (Note5) ±0 - +100 μm

< IGBT MODULES >

CM100MXA-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : August 2013 3

ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise sp ecified )

INVERTER PART IGBT/DIODE Limits

Symbol Item Conditions

Min. Typ. Max.

Unit

ICES Collector-emitter cut-off current VCE=VCES, G-E short-circuited - - 1.0 mA

IGES Gate-emitter leakage current VGE=VGES, C-E short-circuited - - 0.5 μA

VGE(th) Gate-emitter threshold voltage IC=10 mA, VCE=10 V 5.4 6.0 6.6 V

IC=100 A (Note6) , Tj=25 °C - 1.80 2.25

VGE=15 V, Tj=125 °C - 2.00 -

(Terminal) Tj=150 °C - 2.05 - V

IC=100 A (Note6) , Tj=25 °C - 1.70 2.15

VGE=15 V, Tj=125 °C - 1.90 -

VCEsat Collector-emitter saturation voltage

(Chip) Tj=150 °C - 1.95 - V

Cies Input capacitance - - 10

Coes Output capacitance - - 2.0

Cres Reverse transfer capacitance VCE=10 V, G-E short-circuited - - 0.17

QG Gate charge VCC=600 V, IC=100 A, VGE=15 V - 233 - nC

td(on) Turn-on delay time - - 300

tr Rise time VCC=600 V, IC=100 A, VGE=±15 V, - - 200

td(off) Turn-off delay time - - 600

tf Fall time RG=6.2 Ω, Inductive load - - 300

IE=100 A (Note6) , Tj=25 °C - 1.80 2.25

G-E short-circuited, Tj=125 °C - 1.80 -

(Terminal) T j=150 °C - 1.80 - V

IE=100 A (Note6) , Tj=25 °C - 1.70 2.15

G-E short-circuited, Tj=125 °C - 1.70 -

VEC (Note1) Emitter-collector voltage

(Chip) Tj=150 °C - 1.70 - V

trr (Note1) Reverse recovery time VCC=600 V, IE=100 A, VGE=±15 V, - - 300 ns

Qrr (Note1) Reverse recovery charge RG=6.2 Ω, Inductive load - 5.3 - μC

Eon Turn-on switching energy per pulse VCC=600 V, IC=IE=100 A, - 8.6 -

Eoff Turn-off switching energy per pulse VGE=±15 V, RG=6.2 Ω, T j=150 °C, - 10.7 - mJ

Err (Note1) Reverse recovery energy per pulse Inductive load - 10.2 - mJ

Main terminals-chip, per switch,

RCC'+EE' Internal lead resistance TC=25 °C (Note4) - - 3.5 mΩ

rg Internal gate resistance Per switch - 0 - Ω

BRAKE PART IGBT/DIODE Limits

Symbol Item Conditions

Min. Typ. Max.

Unit

ICES Collector-emitter cut-off current VCE=VCES, G-E short-circuited - - 1.0 mA

IGES Gate-emitter leakage current VGE=VGES, C-E short-circuited - - 0.5 μA

VGE(th) Gate-emitter threshold voltage IC=5 mA, VCE=10 V 5.4 6.0 6.6 V

IC=50 A (Note6) , Tj=25 °C - 1.80 2.25

VGE=15 V, Tj=125 °C - 2.00 -

(Terminal) Tj=150 °C - 2.05 - V

IC=50 A (Note6) , Tj=25 °C - 1.70 2.15

VGE=15 V, Tj=125 °C - 1.90 -

VCEsat Collector-emitter saturation voltage

(Chip) Tj=150 °C - 1.95 - V

Cies Input capacitance - - 5.0

Coes Output capacitance - - 1.0

Cres Reverse transfer capacitance VCE=10 V, G-E short-circuited - - 0.08

QG Gate charge VCC=600 V, IC=50 A, VGE=15 V - 117 - nC

< IGBT MODULES >

CM100MXA-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : August 2013 4

ELECTRICAL CHARACTERISTICS (cont.; Tj=25 °C, unless otherwise specified)

BRAKE PART IGBT/DIODE Limits

Symbol Item Conditions

Min. Typ. Max.

Unit

td(on) Turn-on delay time - - 300

tr Rise time VCC=600 V, IC=50 A, VGE=±15 V, - - 200

td(off) Turn-off delay time - - 600

tf Fall time RG=13 Ω, Inductive load - - 300

IRRM Reverse current VR=VRRM, G-E short-circuited - - 1.0 mA

IF=50 A (Note6) , T j=25 °C - 1.80 2.25

G-E short-circuited, Tj=125 °C - 1.80 -

(Terminal) T j=150 °C - 1.80 - V

IF=50 A (Note6) , T j=25 °C - 1.70 2.15

G-E short-circuited, Tj=125 °C - 1.70 -

VF Forward voltage

(Chip) Tj=150 °C - 1.70 - V

trr Reverse recovery time VCC=600 V, IF=50 A, VGE=±15 V, - - 300 ns

Qrr Reverse recovery charge RG=13 Ω, Inductive load - 2.7 - μC

Eon Turn-on switching energy per pulse VCC=600 V, IC=IF=50 A, - 5.5 -

Eoff Turn-off switching energy per pulse VGE=±15 V, RG=13 Ω, T j=150 °C, - 5.3 - mJ

Err Reverse recovery energy per pulse Inductive load - 4.5 - mJ

rg Internal gate resistance - - 0 - Ω

CONVERTER PART DIODE Limits

Symbol Item Conditions

Min. Typ. Max.

Unit

IRRM Repetitive peak reverse current VR=VRRM, Tj=150 °C - - 20 mA

(Terminal) Forward voltage IF=100 A (Note6) - 1.28 1.8 V

NTC THERMISTOR PART Limits

Symbol Item Conditions

Min. Typ. Max.

Unit

R25 Zero-power resistance TC=25 °C (Note4) 4.85 5.00 5.15 kΩ

∆R/R Deviation of resistance R100=493 Ω, TC=100 °C (Note4) -7.3 - +7.8 %

B(25/50) B-constant Approximate by equation

(Note7) - 3375 - K

P25 Power dissipation TC=25 °C (Note4) - - 10 mW

THERMAL RESISTANCE CHARACTERISTICS Limits

Symbol Item Conditions

Min. Typ. Max.

Unit

Rth(j-c)Q Junction to case, per Inverter IGBT - - 0.20

Rth(j-c)D Junction to case, per Inverter DIODE - - 0.29 K/W

Rth(j-c)Q Junction to case, per Brake IGBT - - 0.35

Rth(j-c)D Junction to case, per Brake DIODE - - 0.63 K/W

Rth(j-c)D

Thermal resistance (Note4)

Junction to case, per Converter DIODE - - 0.24 K/W

Case to heat sink, per 1 module,

Rth(c-s) Contact thermal resistance (Note4) Thermal grease applied (Note8) - 15 - K/kW

< IGBT MODULES >

CM100MXA-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : August 2013 5

Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).

2. Junction temperature (T j) should not increase beyond Tjmax rating.

3. Pulse width and repetition rate should be such that the device junction temperature (T j) dose not exceed Tjmax rating.

4. Case temperature (TC) and heat sink temperature (T s) are defined on the each surface (mounting side) of base plate and heat sink

just under the chips. Refer to the figure of chip location.

5. The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.

+:Convex

-:Concave

+:Convex

-:Concave

mounting side

mounting s ide

mounting side

6. Pulse width and repetition rate should be such as to cause negligible temperature rise.

Refer to the figure of test circuit.

7. )

/()

ln(B )/( 502550

5025 11  ,

R25: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K]

R50: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K]

8. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).

9. Use the following screws when mounting the printed circuit board (PCB) on the stand offs.

"φ2.6×10 or φ2.6×12 self tapping screw"

The length of the screw depends on the thickness (t1.6~t2.0) of the PCB.

RECOMMENDED OPERATIN G CONDITIONS Limits

Symbol Item Conditions

Min. Typ. Max.

Unit

VCC (DC) Supply voltage Applied across P-N/P1-N1 terminals - 600 850 V

VGEon Gate (-emitter drive) voltage Applied across GB-Es/

G*P-*/G*N-Es(*=U, V, W) terminals 13.5 15.0 16.5 V

Inverter IGBT 6.2 - 62

RG External gate resistance Per switch Brake IGBT 13 - 130 Ω

< IGBT MODULES >

CM100MXA-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : August 2013 6

CHIP LOCATION (Top view) Dimension in mm, tolerance: ±1 mm

Tr*P/Tr*N/TrBr: IGBT, Di*P/Di*N: DIODE (*=U/V/W), DiBr: BRAKE DIODE, CR*P/CR*N: CONVERTER DIODE (*=R/S/T), Th: NTC thermistor

TEST CIRCUIT AND WAVEFORMS

VCC

-VGE

+VGE

-VGE

vCE

vGE 0 V

G*P

G*N

*: U, V, W

Load

～

td(on)

10%

90 %

vGE

～

0 V

0 A

td(off) t

Irr

Qrr=0.5×Irr×trr

0.5×Irr

trr

0 A

Switching characteristics te st circuit and waveforms trr, Qrr test waveform

0.1×I

0.1×V

t0 0.02×I

IEM vEC

t0 V

VCC

0 A

IGBT Turn-on switching energy IGBT Turn-off switching energy DIODE Reverse recovery energy

Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (In t egral time instruction drawing )

< IGBT MODULES >

CM100MXA-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : August 2013 7

TEST CIRCUIT

VGE=15V

Shor

circuited

48~49

14~15

44~45

VGE=15V

Short-

circuited

48~49

19~20

44~45

IC18

VGE=15V

Short-

circuited

48~49

24~25

44~45

Shor

circuited

48~49

52~53

44~45

VGE=15V

Short-

circuited

GUP

GUN

VGE=15V

Short-

circuited

GVP

GVN

VGE=15V

Short-

circuited

GWP

GWN

VGE=15V

ICGB

Es1

G-E

short-circuited GVP-V, GVN-Es,

GWP-W, GWN-Es,

GB-Es

G-E

short-circuited GUP-U, GUN-Es,

GWP-W, GWN-Es,

GB-Es

G-E

short-circuited GUP-U, GUN-Es,

GVP-V, GVN-Es,

GB-Es

G-E

short-circuited GUP-U, GUN-Es,

GVP-V, GVN-Es,

GWP-W, GWN-Es

UP / UN IGBT VP / VN IGBT WP / WN IGBT Brake IGBT / DIODE

VCEsat / BRAKE DIODE VF test circuit

Shor

circuited

48~49

14~15

44~45

Shor

circuited

Short-

circuited

48~49

19~20

44~45

Short-

circuited

Short-

circuited

48~49

24~25

44~45

Short-

circuited

54~56

1~2

59~61

Short-

circuited

GUP

GUN

Short-

circuited

Short-

circuited

GVP

GVN

Short-

circuited

Short-

circuited

GWP

GWN

Short-

circuited

G-E

short-circuited GVP-V, GVN-Es,

GWP-W, GWN-Es,

GB-Es

G-E

short-circuited GUP-U, GUN-Es,

GWP-W, GWN-Es,

GB-Es

G-E

short-circuited GUP-U, GUN-Es,

GVP-V, GVN-Es,

GB-Es

UP / UN DIODE VP / VN DIODE WP / WN DIODE CONVERTER DIODE (ex. phase-R)

VEC / CONVERTER DIODE VF test circuit

* In the above test circuit, should use all three main pin terminals (P1/N1/P/N/U/V/W) for connection with the terminals and the current source.

< IGBT MODULES >

CM100MXA-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : August 2013 8

PERFORMANCE CURVES

INVERTER PART

OUTPUT CHARACTERISTICS

(TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE

CHARACTERISTICS

(TYPICAL)

Tj=25 °C (Chip) VGE=15 V (Chip)

COLLECTOR CURRENT IC (A)

100

150

200

0246810

COLLECTOR-EMITTER

SATURATION VOLTAGE VCE (V)

0.5

1.5

2.5

3.5

0 50 100 150 200

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

VGE=20 V 13.5 V

12 V

Tj=125 °C

Tj=150 °C

15 V

11 V

COLLECTOR-EMITTER SATURATION VOLTAGE

CHARACTERISTICS

(TYPICAL)

FREE WHEELING DIODE

FORWARD CHAR ACTERISTICS

(TYPICAL)

Tj=25 °C (Chip) G-E short-circuited (Chip)

COLLECTOR-EMITTER

SATURATION VOLTAGE VCE (V)

6 8 10 12 14 16 18 20

EMITTER CURRENT IE (A)

100

1000

0 0.5 1 1.5 2 2.5 3

GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V)

Tj=25 °C

10 V

9 V

Tj=125 °C

IC=200 A

IC=100 A

Tj=150 °C

IC=40 A

Tj=25 °C

< IGBT MODULES >

CM100MXA-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : August 2013 9

PERFORMANCE CURVES

INVERTER PART

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

VCC=600 V, VGE=±15 V, RG=6.2 Ω, INDUCTIVE LOAD

---------------: T j=150 °C, - - - - -: Tj=125 °C

VCC=600 V, VGE=±15 V, IC=100 A, INDUCTIVE LOAD

---------------: T j=150 °C, - - - - -: Tj=125 °C

SWITCHING TIME (ns)

100

1000

1 10 100

SWITCHING TIME (ns)

100

1000

1 10 100

COLLECTOR CURRENT IC (A) EXTERNAL GATE RESISTANCE RG (Ω)

td(off)

td(on)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

VCC=600 V, VGE=±15 V, RG=6.2 Ω,

INDUCTIVE LOAD, PER PULSE

---------------: T j=150 °C, - - - - -: Tj=125 °C

VCC=600 V, VGE=±15 V, IC=100 A,

INDUCTIVE LOAD, PER PULSE

---------------: T j=150 °C, - - - - -: Tj=125 °C

SWITCHING ENERGY (mJ)

REVERSE RECOVERY ENERGY (mJ)

0.1

100

1 10 100

SWITCHING ENERGY (mJ)

REVERSE RECOVERY ENERGY (mJ)

100

1 10 100

COLLECTOR CURRENT IC (A)

EMITTER CURRENT IE (A) EXTERNAL GATE RESISTANCE RG (Ω)

Eon

Eoff

Err

Eoff

Err

Eon

< IGBT MODULES >

CM100MXA-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : August 2013 10

PERFORMANCE CURVES

INVERTER PART

CAPACITANCE CHARACTERISTICS

(TYPICAL) FREE WHEELING DIODE

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

G-E short-circuited, Tj=25 °C

VCC=600 V, VGE=±15 V, RG=6.2 Ω,

---------------: T j=150 °C, - - - - -: Tj=125 °C

CAPACITANCE (nF)

0.01

0.1

100

0.1 1 10 100

trr (ns), I rr (A)

100

1000

1 10 100

COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A)

Cies

Irr

Coes

trr

Cres

GATE CHARGE CHARACTERISTICS

(TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS

(MAXIMUM)

VCC=600 V, IC=100 A, Tj=25 °C

Single pulse, TC=25 °C

Rth(j-c)Q=0.20 K/W, Rth(j-c)D=0.29 K/W

GATE-EMITTER VOLTAGE VGE (V)

0 50 100 150 200 250

NORMALIZED TRANSIENT THERMAL RESISTA NCE

Zth(j-c)

0.001

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10

GATE CHARGE QG (nC) TIME (S)

< IGBT MODULES >

CM100MXA-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : August 2013 11

PERFORMANCE CURVES

BRAKE PART

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(TYPICAL)

CLAMP DIODE

FORWARD CHAR ACTERISTICS

(TYPICAL)

VGE=15 V (Chip) G-E short-circuited (Chip)

COLLECTOR-EMITTER

SATURATION VOLTAGE VCEsat (V)

0.5

1.5

2.5

3.5

0 20406080100

FORWARD VOLTAGE VF (V)

100

0.5 1 1.5 2 2.5

COLLECTOR CURRENT IC (A) FORWARD CURRENT IF (A)

Tj=125 °C

Tj=150 °C

Tj=25 °C

Tj=125 °C

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

VCC=600 V, VGE=±15 V, RG=13 Ω, INDUCTIVE LOAD

---------------: T j=150 °C, - - - - -: Tj=125 °C

VCC=600 V, IC=50 A, VGE=±15 V, INDUCTIVE LOAD

---------------: T j=150 °C, - - - - -: Tj=125 °C

SWITCHING TIME (ns)

100

1000

1 10 100

SWITCHING TIME (ns)

100

1000

10 100 1000

COLLECTOR CURRENT IC (A) EXTERNAL GATE RESISTANCE RG (Ω)

td(off) tftf

td(off)

td(on)

< IGBT MODULES >

CM100MXA-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : August 2013 12

PERFORMANCE CURVES

BRAKE PART

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

VCC=600 V, VGE=±15 V, RG=13 Ω,

INDUCTIVE LOAD, PER PULSE

---------------: T j=150 °C, - - - - -: Tj=125 °C

VCC=600 V, IC/IF=50 A, VGE=±15 V,

INDUCTIVE LOAD, PER PULSE

---------------: T j=150 °C, - - - - -: Tj=125 °C

SWITCHING ENERGY (mJ)

REVERSE RECOVERY ENERGY (mJ)

0.1

1 10 100

SWITCHING ENERGY (mJ)

REVERSE RECOVERY ENERGY (mJ)

100

10 100 1000

COLLECTOR CURRENT IC (A)

FORWARD CURRENT IF (A) EXTERNAL GATE RESISTANCE RG (Ω)

Err

Eon

Eoff

Eon Eoff

Err

CLAMP DIODE

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS

(MAXIMUM)

VCC=600 V, VGE=±15 V, RG=13 Ω, INDUCTIVE LOAD

---------------: T j=150 °C, - - - - -: Tj=125 °C

Single pulse, TC=25 °C

Rth(j-c)Q=0.35 K/W, Rth(j-c)D=0.63 K/W

trr (ns), I rr (A)

100

1000

110100

NORMALIZED TRANSIENT THERMAL RESISTA NCE

Zth(j-c)

0.001

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10

FORWARD CURRENT IF (A) TIME (S)

trr

Irr

< IGBT MODULES >

CM100MXA-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : August 2013 13

PERFORMANCE CURVES

CONVERTER PART

CONVERTER DIODE

FORWARD CHAR ACTERISTICS

(TYPICAL)

TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS

(MAXIMUM)

Single pulse, TC=25 °C

Rth(j-c)D=0.24 K/W

FORWARD CURRENT IF (A)

100

0.4 0.6 0.8 1 1.2 1.4 1.6

NORMALIZED TRANSIENT THERMAL RESISTA NCE

Zth(j-c)

0.001

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10

FORWARD VOLTAGE VF (V) TIME (S)

Tj=125 °C

Tj=25 °C

NTC thermistor part

TEMPERATURE CHARACTERISTICS

(TYPICAL)

RESISTANCE R (kΩ)

0.1

100

-50 -25 0 25 50 75 100 125

TEMPERATURE T (°C)

< IGBT MODULES >

CM100MXA-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : August 2013 14

Keep safety first in your circuit designs!

Mitsubishi Electric Corporation puts th e maximum ef fort into making semiconductor products better and more

reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors

may lead to personal injury, fire or property damage. Remember to give due consideration to safety when

making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary

circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.

Notes regarding these materials

•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi

semiconductor product best suited to the customer's application; they do not convey any license under any

intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.

•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any

third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or

circuit application examples contained in these materials.

•All information contained in these materials, including product data, diagrams, charts, programs and

algorithms represents information on products at the time of publication of these materials, and are subject

to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It

is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized

Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product

listed herein.

The information described here may contain technical inaccuracies or typographical errors. Mitsubishi

Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these

inaccuracies or errors.

Please also pay attention to information published by Mitsubishi Electric Corporation by various means,

including the Mitsubishi Semiconductor home page (www.MitsubishiElectric.com/semiconductors/).

•When using any or all of the information contained in these materials, including product data, diagrams,

charts, programs, and algorithms, please be sure to evaluate all information as a total system before making

a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes

no responsibility for any damage, liability or other loss resulting from the information containedherein.

•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or

system that is used under circumstances in which human life is potentially at stake. Please contact

Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when

considering the use of a product contained herein for any specific purposes, such as apparatus or systems

for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.

•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in wh ole or

in part these materials.

•If these products or technologies are subject to the Japanese export control restrictions, they must be

exported under a license from the Japanese government and cannot be imported into a country other than

the approved destination.

Any diversion or reexport contrary to t he export control laws and regulations of Japan and/or the country of

destination is prohibited.

•Please contact Mit subishi Ele ctric Corporation or an authorized Mitsubishi Semiconductor product distributor

for further details on these materials or the products contained therein.