RoHS Device
Page 1
REV:B
Features
-PNP silicon epitaxial planar transistor for
switching and amplifier application.
-As complementary type, the NPN transistor
2N3904-G is recommended.
-This transistor is available in the SOT-23
case with the type designation MMBT3906-G.
2N3906-G (PNP)
Dimensions in inches and (millimeter)
TO-92
QW-BTR05
0.146(3.70)
0.130(3.30)
0.(43) i
135 3.Mn.
0. 20(.51)
00
0. 14(36)
00.
14)
0.055 (1.
10)
0.043(1.
0. 5(38) ax.
010. M 60)x.
0.063(1. Ma
0.173(4.40)
0.185(4.70)
0.169(4.30)
0.185(4.70)
(11
0.5554.0)
0. 71(1.5)
540
0.050(1.270)TYP
0.096(2.44)
0.104(2.64)
0.015(0.38)
0.022(0.55)
1 2 3
1. Emitter
2. Base
3. Collector
VCEO
Emitter-Base voltage
Collector-Emitter voltage
Collector-Base voltage
Collector Current-Continuous
Symbol
Parameter Min
Max
Unit
V
V
V
-5
-40
-40
IC-0.2 A
0.625 W
PC
Collector Dissipation
+150 OC
TSTG , TJ
Storage Temperature and Junction Temperature -55
VCBO
VEBO
2
Base
1
Emitter
Collector
3
°°
General Purpose Transistor
Maximum Ratings (at TA=25°C unless otherwise noted)
Page 2
REV:B
Symbol
Parameter Conditions Min
Max
Unit
Collector-Base breakdown voltage
-0.1
IC =-10μA , IE=0
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Delay time
Storage time
Rise time
Fall time
IC =-1mA , IB=0
IE =-10μA , IC=0
VCB=-40V , IE=0
VCE=-30V , VBE(off)=-3V
VEB=-5V , IC=0
VCE=-1V , IC=-10mA
VCE=-1V , IC=-50mA
IC=-50mA , IB=-5mA
VCE=-20V , IC=-10mA
f=100MHz
VCC=-3V , VBE=-0.5V
IC=-10mA , IB1=-1mA
VCC=-3V , IC=-10mA
IB1=IB2=-1mA
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEX
IEBO
hFE(1)
hFE(2)
VCE(sat)
fT
td
tr
ts
tf
-40
-40
-5
-50
-0.1
100
60
-0.4
250
35
35
225
75
V
V
V
µA
µA
µA
V
MHz
nS
nS
nS
nS
Classification of hFE(1)
Rank OYG
Range 100-200 200-300 300-400
VCE=-1V , IC=-100mA
IC=-50mA , IB=-5mA
hFE(3) 30
400
-0.95 V
QW-BTR05
VBE(sat)
Base-emitter saturation voltage
Electrical Characteristics (at TA=25°C unless otherwise noted)
General Purpose Transistor
Page 3
REV:B
QW-BTR05
Collector Current, Ic (mA)
0
Fig.4 - hFE-Ic
0
DC Current Gain HFE
Collector Emitter Saturation Voltage VCE(sat)-V
Collector Current, IC (A)
Fig.2 - Vec-Ic
Collector-Emitter Voltage, Vce (V)
Fig.1 - IC-Vce
Collector Current, Ic (A)
Collector Current, IC (mA)
-0.0
-2.5
1 10 1004
Vce=1v
-1 -10 -100
-0 -0.10
-0
-0.04 -0.06
-0.02
-0.5
-1.0
-1.5
-2.0
-0.08
ib=200uA
400u
800u
1m
1.2m
1.4m
600u
COMMON
Ta=25°C
EMITTER
Fig.5 - PC-Ta
Collector Power Dissipation pc , (mW)
Ambient Temperature, Ta (°C)
0 10 50 150
0
70 90
30 110
100
200
300
400
500
600
700
800
130
Collector Emitter Voltage, Vce (A)
-0 -10
-4 -6
-2
-0.04
-8
-0.00
-0.01
-0.02
-0.03
-0.05
-0.06
-0.07
-0.08
350u
300u
250u
200u
150u
100u
ib=50uA
COMMON
Ta=25°C
EMITTER
-2.0
-1.5
-1.0
-0.5
Fig.3 - Vcesat-Ic
Vbesat-Ic
40
80
120
160
200
260
240
COMMON
Ta=25°C
EMITTER
General Purpose Transistor
RATING AND CHARACTERISTIC CURVES ( )2N3906-G
Page 4
REV:B
QW-BTR05
Standard Packaging
Case Type
Bag
(EA)
1000
BOX
(EA)
10000
CARTON
(EA)
100000
TO-92
General Purpose Transistor
