SEMiX653GB176HDs
© by SEMIKRON Rev. 1 – 24.06.2010 1
SEMiX® 3s
GB
Trench IGBT Modules
SEMiX653GB176HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
•V
CE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
•UPS
• Electronic welders
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
VCES 1700 V
ICTj= 150 °C Tc=25°C 619 A
Tc=80°C 438 A
ICnom 450 A
ICRM ICRM = 2xICnom 900 A
VGES -20 ... 20 V
tpsc
VCC = 1000 V
VGE ≤ 20 V
VCES ≤ 1700 V
Tj= 125 °C 10 µs
Tj-55 ... 150 °C
Inverse diode
IFTj= 150 °C Tc=25°C 545 A
Tc=80°C 365 A
IFnom 450 A
IFRM IFRM = 2xIFnom 900 A
IFSM tp= 10 ms, sin 180°, Tj=25°C 2900 A
Tj-40 ... 150 °C
Module
It(RMS) 600 A
Tstg -40 ... 125 °C
Visol AC sinus 50Hz, t = 1 min 4000 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
VCE(sat) IC=450A
VGE =15V
chiplevel
Tj=25°C 22.45V
Tj= 125 °C 2.45 2.9 V
VCE0 Tj=25°C 11.2V
Tj= 125 °C 0.9 1.1 V
rCE VGE =15V Tj=25°C 2.2 2.8 mΩ
Tj= 125 °C 3.4 4.0 mΩ
VGE(th) VGE=VCE, IC= 18 mA 5.2 5.8 6.4 V
ICES VGE =0V
VCE = 1700 V
Tj=25°C 3mA
Tj= 125 °C mA
Cies VCE =25V
VGE =0V
f=1MHz 39.6 nF
Coes f=1MHz 1.65 nF
Cres f=1MHz 1.31 nF
QGVGE =- 8 V...+ 15 V 4200 nC
RGint Tj=25°C 1.67 Ω
td(on) VCC = 1200 V
IC=450A
RG on =3.6Ω
RG off =3.6Ω
Tj= 125 °C 290 ns
trTj= 125 °C 90 ns
Eon Tj= 125 °C 300 mJ
td(off) Tj= 125 °C 975 ns
tfTj= 125 °C 190 ns
Eoff Tj= 125 °C 180 mJ
Rth(j-c) per IGBT 0.054 K/W
http://store.iiic.cc/
SEMiX653GB176HDs
2 Rev. 1 – 24.06.2010 © by SEMIKRON
Characteristics
Symbol Conditions min. typ. max. Unit
Inverse diode
VF = VEC IF=450A
VGE =0V
chip
Tj=25°C 1.7 1.90 V
Tj= 125 °C 1.7 1.9 V
VF0 Tj=25°C 0.9 1.1 1.3 V
Tj= 125 °C 0.7 0.9 1.1 V
rFTj=25°C 1.3 1.3 1.3 mΩ
Tj= 125 °C 1.8 1.8 1.8 mΩ
IRRM IF=450A
di/dtoff = 4200 A/µs
VGE =-15V
VCC = 1200 V
Tj= 125 °C 380 A
Qrr Tj= 125 °C 130 µC
Err Tj= 125 °C 73 mJ
Rth(j-c) per diode 0.11 K/W
Module
LCE 20 nH
RCC'+EE' res., terminal-chip TC=25°C 0.7 mΩ
TC= 125 °C 1mΩ
Rth(c-s) per module 0.04 K/W
Msto heat sink (M5) 3 5 Nm
Mtto terminals (M6) 2.5 5 Nm
Nm
w300 g
Temperatur Sensor
R100 Tc=100°C (R25=5 kΩ) 493 ± 5% Ω
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
3550
±2% K
SEMiX® 3s
GB
Trench IGBT Modules
SEMiX653GB176HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
•V
CE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
•UPS
• Electronic welders
http://store.iiic.cc/
SEMiX653GB176HDs
© by SEMIKRON Rev. 1 – 24.06.2010 3
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
http://store.iiic.cc/
SEMiX653GB176HDs
4 Rev. 1 – 24.06.2010 © by SEMIKRON
Fig. 7: Typ. switching times vs. ICFig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge
http://store.iiic.cc/
SEMiX653GB176HDs
© by SEMIKRON Rev. 1 – 24.06.2010 5
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
SEMiX 3s
spring configuration
http://store.iiic.cc/
