BCX71J-D - ON Semiconductor - Datasheet.Directory

 Semiconductor Components Industries, LLC, 2002

May, 2002 – Rev. 1 1Publication Order Number:

BCX71J/D

BCX71J

General Purpose Transistor

PNP Silicon

•Moisture Sensitivity Level: 1

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector-Emitter Voltage VCEO –45 Vdc

Collector-Base Voltage VCBO –45 Vdc

Emitter-Base Voltage VEBO –5.0 Vdc

Collector Current – Continuous IC–100 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation (Note 1.)

TA = 25°C

Derate above 25°C

PD350

2.8

mW/°C

Storage Temperature Tstg 150 °C

Thermal Resistance –

Junction-to-Ambient (Note 1.) RJA 357 °C/W

1. Package mounted on 99.5% alumina 10 X 8 X 0.6 mm. SOT–23

CASE 318

STYLE 6

BJ = Specific Device Marking

M = Date Code

BJ M

MARKING DIAGRAM

Device Package Shipping

ORDERING INFORMATION

BCX71JLT1 SOT–23 3000/Tape & Reel

COLLECTOR

BASE

EMITTER

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 2.0 mAdc, IB = 0) V(BR)CEO –45 – Vdc

Collector–Base Breakdown Voltage

(IE = 1.0 Adc, IE = 0) V(BR)EBO –5.0 – Vdc

Collector Cutoff Current

(VCE = 32 Vdc)

(VCE = 32 Vdc, TA = 150°C)

ICES –

––20

–20 nAdc

Adc

ON CHARACTERISTICS

DC Current Gain

(IC = 10 Adc, VCE = 5.0 Vdc)

(IC = 2.0 mAdc, VCE = 5.0 Vdc)

(IC = 50 mAdc, VCE = 1.0 Vdc)

(IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)

hFE 40

250

100

250

–

460

–

500

–

Collector–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 0.25 mAdc)

(IC = 50 mAdc, IB = 1.25 mAdc)

VCE(sat) –

––0.25

–0.55

Vdc

Base–Emitter Saturation Voltage

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

(IC = 10 mAdc, VCE = 5.0 Vdc)

VBE(sat) –0.6

–0.68 –0.85

–1.05

Vdc

Base–Emitter On Voltage

(IC = 2.0 mAdc, VCE = 5.0 Vdc) VBE(on) –0.6 –0.75 Vdc

Output Capacitance

(VCE = 10 Vdc, IC = 0, f = 1.0 MHz) Cobo – 6.0 pF

Noise Figure

(IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) NF – 6.0 dB

SWITCHING CHARACTERISTICS

Turn–On Time

(IC = 10 mAdc, IB1 = 1.0 mAdc) ton – 150 ns

Turn–Off Time

(IB2 = 1.0 mAdc, VBB = 3.6 Vdc, R1 = R2 = 5.0 k, RL = 990 )toff – 800 ns

TYPICAL NOISE CHARACTERISTICS

(VCE = –5.0 Vdc, TA = 25°C)

Figure 1. Noise Voltage

f, FREQUENCY (Hz)

5.0

7.0

3.0

Figure 2. Noise Current

f, FREQUENCY (Hz)

1.010 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k

1.0

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.1

IC = 10 A

100 A

en, NOISE VOLTAGE (nV)

In, NOISE CURRENT (pA)

30 A

BANDWIDTH = 1.0 Hz

RS ≈∞

IC = 1.0 mA

300 A

100 A

30 A

10 A

10 20 50 100 200 500 1.0k 2.0k 5.0k 10k

2.0 1.0 mA

0.2

300 A

BANDWIDTH = 1.0 Hz

RS ≈ 0

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NOISE FIGURE CONTOURS

(VCE = –5.0 Vdc, TA = 25°C)

500k

100

200

500

1.0k

10k

5.0k

20k

50k

100k

200k

2.0k

1.0M

500k

100

200

500

1.0k

10k

5.0k

20k

50k

100k

200k

2.0k

1.0M

Figure 3. Narrow Band, 100 Hz

IC, COLLECTOR CURRENT (A)

Figure 4. Narrow Band, 1.0 kHz

IC, COLLECTOR CURRENT (A)

0.5 dB

BANDWIDTH = 1.0 Hz

RS, SOURCE RESISTANCE (OHMS)

Figure 5. Wideband

IC, COLLECTOR CURRENT (A)

10 Hz to 15.7 kHz

RS, SOURCE RESISTANCE (OHMS)

Noise Figure is Defined as:

NF 20 log10en24KTRSIn2RS2

4KTRS12

= Noise Voltage of the Transistor referred to the input. (Figure 3)

= Noise Current of the T ransistor referred to the input. (Figure 4)

= Boltzman’s Constant (1.38 x 10–23 j/°K)

= Temperature of the Source Resistance (°K)

= Source Resistance (Ohms)

1.0 dB

2.0 dB

3.0 dB

20 30 50 70 100 200 300 500 700 1.0k 10 20 30 50 70 100 200 300 500 700 1.0k

500k

100

200

500

1.0k

10k

5.0k

20k

50k

100k

200k

2.0k

1.0M

20 30 50 70 100 200 300 500 700 1.0k

BANDWIDTH = 1.0 Hz

5.0 dB

0.5 dB

1.0 dB

2.0 dB

3.0 dB

5.0 dB

0.5 dB

1.0 dB

2.0 dB

3.0 dB

5.0 dB

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TYPICAL STATIC CHARACTERISTICS

Figure 6. DC Current Gain

IC, COLLECTOR CURRENT (mA)

400

0.003

h , DC CURRENT GAIN

TJ = 125°C

-55°C

25°C

VCE = 1.0 V

VCE = 10 V

Figure 7. Collector Saturation Region

IC, COLLECTOR CURRENT (mA)

1.4

Figure 8. Collector Characteristics

IC, COLLECTOR CURRENT (mA)

V, VOLTAGE (VOLTS)

1.0 2.0 5.0 10 20 50

1.6

100

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = 1.0 V

*VC for VCE(sat)

VB for VBE

0.1 0.2 0.5

Figure 9. “On” Voltages

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.002

TA = 25°C

IC = 1.0 mA 10 mA 100 mA

Figure 10. Temperature Coefficients

50 mA

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

100

IC, COLLECTOR CURRENT (mA)

TA = 25°C

PULSE WIDTH = 300 s

DUTY CYCLE ≤ 2.0%

IB = 400 A

350 A

300 A250 A

200 A

*APPLIES for IC/IB ≤ hFE/2

25°C to 125°C

-55°C to 25°C

25°C to 125°C

-55°C to 25°C

0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5.0 10 15 20 25 30 35 40

1.2

1.0

0.8

0.6

0.4

0.2

02.4

0.8

1.6

0.8

1.0 2.0 5.0 10 20 50 100

0.1 0.2 0.5

200

100

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

150 A

100 A

50 A

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TYPICAL DYNAMIC CHARACTERISTICS

C, CAPACITANCE (pF)

Figure 11. Turn–On Time

IC, COLLECTOR CURRENT (mA)

500

Figure 12. Turn–Off Time

IC, COLLECTOR CURRENT (mA)

2.0 5.0 10 20 30 50

1000

Figure 13. Current–Gain — Bandwidth Product

IC, COLLECTOR CURRENT (mA)

Figure 14. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

3.01.0

500

0.5

t, TIME (ns)

f, CURRENT-GAIN  BANDWIDTH PRODUCT (MHz)

5.0

7.0

100

300

7.0 70 100

VCC = 3.0 V

IC/IB = 10

TJ = 25°C

td @ VBE(off) = 0.5 V

100

200

300

500

700

-2.0-1.0

VCC = -3.0 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

100

200

300

0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50

TJ = 25°C

VCE = 20 V

5.0 V

1.0

2.0

3.0

5.0

7.0

0.1 0.2 0.5 1.0 2.0 5.0 10 20 500.05

Cib

Cob

200

-3.0 -5.0 -7.0 -20-10 -30 -50 -70 -100

TJ = 25°C

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TYPICAL DYNAMIC CHARACTERISTICS

Figure 15. Input Impedance

IC, COLLECTOR CURRENT (mA)

Figure 16. Output Admittance

IC, COLLECTOR CURRENT (mA)

h , OUTPUT ADMITTANCE ( mhos)

oe 

hie, INPUT IMPEDANCE (k )Ω

2.0 5.0 10 20 50

1.0

0.2

100

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

0.1 0.2 0.5

VCE = -10 Vdc

f = 1.0 kHz

TA = 25°C

2.0 5.0 10 20 50

1.0

2.0

100

3.0

5.0

7.0

100

200

0.1 0.2 0.5

VCE = 10 Vdc

f = 1.0 kHz

TA = 25°C

hfe ≈ 200

@ IC = –1.0 mA hfe ≈ 200

@ IC = 1.0 mA

TJ, JUNCTION TEMPERATURE (°C)

104

-40

IC, COLLECTOR CURRENT (nA)

Figure 17. Typical Collector Leakage Current

10-2

10-1

100

101

102

103

-20 0 +20 +40 +60 +80 +100 +120 +140 +160

VCC = 30 V

ICEO

ICBO

AND

ICEX @ VBE(off) = 3.0 V

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INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the

total design. The footprint for the semiconductor packages

must be the correct size to insure proper solder connection

interface between the board and the package. With the

correct pad geometry, the packages will self align when

subjected to a solder reflow process.

SOT–23

inches

0.037

0.95

0.037

0.95

0.079

2.0

0.035

0.9

0.031

0.8

SOT-23 POWER DISSIPATION

The power dissipation of the SOT-23 is a function of the

drain pad size. This can vary from the minimum pad size

for soldering to a pad size given for maximum power

dissipation. Power dissipation for a surface mount device is

determined by TJ(max), the maximum rated junction

temperature of the die, RJA, the thermal resistance from

the device junction to ambient; and the operating

temperature, TA. Using the values provided on the data

sheet, PD can be calculated as follows:

PD = TJ(max) – TA

RJA

The values for the equation are found in the maximum

ratings table on the data sheet. Substituting these values

into the equation for an ambient temperature TA of 25°C,

one can calculate the power dissipation of the device which

in this case is 225 milliwatts.

PD = 150°C – 25°C

556°C/W = 225 milliwatts

The 556°C/W assumes the use of the recommended

footprint on a glass epoxy printed circuit board to achieve a

power dissipation of 225 milliwatts. Another alternative

would be to use a ceramic substrate or an aluminum core

board such as Thermal Clad. Using a board material such

as Thermal Clad, the power dissipation can be doubled

using the same footprint.

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated

temperature of the device. When the entire device is heated

to a high temperature, failure to complete soldering within

a short time could result in device failure. Therefore, the

following items should always be observed in order to

minimize the thermal stress to which the devices are

subjected.

•Always preheat the device.

•The delta temperature between the preheat and

soldering should be 100°C or less.*

•When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum

temperature ratings as shown on the data sheet. When

using infrared heating with the reflow soldering

method, the difference should be a maximum of 10°C.

•The soldering temperature and time should not exceed

260°C for more than 10 seconds.

•When shifting from preheating to soldering, the

maximum temperature gradient should be 5°C or less.

•After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes.

Gradual cooling should be used as the use of forced

cooling will increase the temperature gradient and

result in latent failure due to mechanical stress.

•Mechanical stress or shock should not be applied

during cooling

* * Soldering a device without preheating can cause

excessive thermal shock and stress which can result in

damage to the device.

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SOLDER STENCIL GUIDELINES

Prior to placing surface mount components onto a printed

circuit board, solder paste must be applied to the pads. A

solder stencil is required to screen the optimum amount of

solder paste onto the footprint. The stencil is made of brass

or stainless steel with a typical thickness of 0.008 inches.

The stencil opening size for the surface mounted package

should be the same as the pad size on the printed circuit

board, i.e., a 1:1 registration.

TYPICAL SOLDER HEATING PROFILE

For any given circuit board, there will be a group of

control settings that will give the desired heat pattern. The

operator must set temperatures for several heating zones,

and a figure for belt speed. Taken together, these control

settings make up a heating “profile” for that particular

circuit board. On machines controlled by a computer, the

computer remembers these profiles from one operating

session to the next. Figure 18 shows a typical heating

profile for use when soldering a surface mount device to a

printed circuit board. This profile will vary among

soldering systems but it is a good starting point. Factors that

can affect the profile include the type of soldering system in

use, density and types of components on the board, type of

solder used, and the type of board or substrate material

being used. This profile shows temperature versus time.

The line on the graph shows the actual temperature that

might be experienced on the surface of a test board at or

near a central solder joint. The two profiles are based on a

high density and a low density board. The Vitronics

SMD310 convection/infrared reflow soldering system was

used to generate this profile. The type of solder used was

62/36/2 Tin Lead Silver with a melting point between

177–189°C. When this type of furnace is used for solder

reflow work, the circuit boards and solder joints tend to

heat first. The components on the board are then heated by

conduction. The circuit board, because it has a large surface

area, absorbs the thermal energy more efficiently, then

distributes this energy to the components. Because of this

effect, the main body of a component may be up to 30

degrees cooler than the adjacent solder joints.

STEP 1

PREHEAT

ZONE 1

RAMP"

STEP 2

VENT

SOAK"

STEP 3

HEATING

ZONES 2 & 5

RAMP"

STEP 4

HEATING

ZONES 3 & 6

SOAK"

STEP 5

HEATING

ZONES 4 & 7

SPIKE"

STEP 6

VENT

STEP 7

COOLING

200°C

150°C

100°C

50°C

TIME (3 TO 7 MINUTES TOTAL) TMAX

SOLDER IS LIQUID FOR

40 TO 80 SECONDS

(DEPENDING ON

MASS OF ASSEMBLY)

205° TO 219°C

PEAK AT

SOLDER JOINT

DESIRED CURVE FOR LOW

MASS ASSEMBLIES

100°C

150°C

160°C

140°C

Figure 18. Typical Solder Heating Profile

DESIRED CURVE FOR HIGH

MASS ASSEMBLIES

170°C

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PACKAGE DIMENSIONS

SOT–23

TO–236AB

CASE 318–08

ISSUE AF

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

DIM

MIN MAX MIN MAX

MILLIMETERS

0.1102 0.1197 2.80 3.04

INCHES

B0.0472 0.0551 1.20 1.40

C0.0350 0.0440 0.89 1.11

D0.0150 0.0200 0.37 0.50

G0.0701 0.0807 1.78 2.04

H0.0005 0.0040 0.013 0.100

J0.0034 0.0070 0.085 0.177

K0.0140 0.0285 0.35 0.69

L0.0350 0.0401 0.89 1.02

S0.0830 0.1039 2.10 2.64

V0.0177 0.0236 0.45 0.60

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD THICKNESS

IS THE MINIMUM THICKNESS OF BASE

MATERIAL.

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Notes

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Notes

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4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031

Phone: 81–3–5740–2700

Email: r14525@onsemi.com

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For additional information, please contact your local

Sales Representative.

BCX71J/D

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