PROTECTION PRODUCTS
1www.semtech.com
PROTECTION PRODUCTS - MicroClampTM
uClamp3301H
Low Voltage μClampTM
for ESD and CDE Protection
Description Features
Dimensions Schematic & PIN Configuration
Revision 2/21/2008
The μClampTM series of Transient Voltage Suppressors
(TVS) are designed to replace multilayer varistors
(MLVs) in portable applications such as cell phones,
notebook computers, and PDAs. They offer superior
electrical characteristics such as lower clamping
voltage and no device degradation when compared to
MLVs. They are designed to protect sensitive semicon-
ductor components from damage or upset due to
electrostatic discharge (ESD), lightning, electrical fast
transients (EFT), and cable discharge events (CDE).
The μClampTM3301H is constructed using Semtech’s
proprietary EPD process technology. The EPD process
provides low standoff voltages with significant reduc-
tions in leakage currents and capacitance over silicon-
avalanche diode processes. They feature a true
operating voltage of 3.3 volts for superior protection
when compared to traditional pn junction devices.
The μClamp3301H is in a SOD-523 package and will
protect one unidirectional line. They give the designer
the flexibility to protect one line in applications where
arrays are not practical.
They may be used to meet the ESD immunity require-
ments of IEC 61000-4-2, Level 4 (±15kV air, ±8kV
contact discharge).
Applications
Mechanical Characteristics
Cellular Handsets & Accessories
Cordless Phones
Personal Digital Assistants (PDAs)
Notebooks & Handhelds
Portable Instrumentation
Digital Cameras
Peripherals
MP3 Players
Transient protection for data lines to
IEC 61000-4-2 (ESD) ±20kV (air), ±10kV (contact)
IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)
Cable Discharge Event (CDE)
Ultra-small SOD-523 package (1.7 x 0.9 x 0.7mm)
Protects one I/O or power line
Low clamping voltage
Working voltage: 3.3V
Low leakage current
Solid-state silicon-avalanche technology
EIAJ SOD-523 package
Molding compound flammability rating: UL 94V-0
Marking : Marking code, cathode band
Packaging: Tape and Reel
Lead Finish: Matte tin
SOD-523 (Top View)
0.9
1.70
1.30
0.35
0.70
Maximum Dimensions (mm)
2© 2008 Semtech Corp. www.semtech.com
PROTECTION PRODUCTS
uClamp3301H
Absolute Maximum Rating
Electrical Characteristics (T=25oC)
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3
© 2008 Semtech Corp. www.semtech.com
PROTECTION PRODUCTS
uClamp3301H
Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
0
10
20
30
40
50
60
70
80
90
100
110
0 25 50 75 100 125 150
Ambient Temperature - TA (oC)
% of Rated Power or IPP
Power Derating Curve
Clamping Voltage vs. Peak Pulse Current Junction Capacitance vs. Reverse Voltage
Insertion Loss S21 ESD Clamping
(8kV Contact per IEC 61000-4-2)
0
2
4
6
8
10
12
012345
Peak Pulse Current - IPP (A)
Clamping Voltage - VC (V)
Waveform
Parameters:
tr = 8μs
td = 20μs
START
. 030 MHz 3
STOP 000
.
000 000 MHz
CH1 S21 LOG 6 dB / REF 0 dB
0.01
0.1
1
0.1 1 10 100 1000
Pulse Duration - tp (µs)
Peak Pulse Power - PPP (kW)
0
0.2
0.4
0.6
0.8
1
1.2
0 0.5 1 1.5 2 2.5 3 3.5
Reverse Voltage - VR (V)
Cj(VR) / Cj(VR=0V)
f = 1 MHz
Note: Data is taken with a 10x attenuator
4© 2008 Semtech Corp. www.semtech.com
PROTECTION PRODUCTS
uClamp3301H
Device Connection Options
The μClamp3301H is designed to protect one I/O, or
power supply line. It will present a high impedance to
the protected line up to 3.3 volts. It will “turn on”
when the line voltage exceeds 3.5 volts. The device is
unidirectional and may be used on lines where the
signal polarity is above ground. The cathode band
should be placed towards the line that is to be
protected.
Due to the “snap-back” characteristics of the low
voltage TVS, it is not recommended that the I/O line be
directly connected to a DC source greater than snap-
back votlage (VSB) as the device can latch on as
described below.
EPD TVS Characteristics
The μClamp3301H is constructed using Semtech’s
proprietary EPD technology. The structure of the EPD
TVS is vastly different from the traditional pn-junction
devices. At voltages below 5V, high leakage current
and junction capacitance render conventional ava-
lanche technology impractical for most applications.
However, by utilizing the EPD technology, the
μClamp3301H can effectively operate at 3.3V while
maintaining excellent electrical characteristics.
The EPD TVS employs a complex nppn structure in
contrast to the pn structure normally found in tradi-
tional silicon-avalanche TVS diodes. Since the EPD
TVS devices use a 4-layer structure, they exhibit a
slightly different IV characteristic curve when compared
to conventional devices. During normal operation, the
device represents a high-impedance to the circuit up to
the device working voltage (VRWM). During an ESD
event, the device will begin to conduct and will enter a
low impedance state when the punch through voltage
(VPT) is exceeded. Unlike a conventional device, the low
voltage TVS will exhibit a slight negative resistance
characteristic as it conducts current. This characteris-
tic aids in lowering the clamping voltage of the device,
but must be considered in applications where DC
voltages are present.
When the TVS is conducting current, it will exhibit a
slight “snap-back” or negative resistance characteris-
tics due to its structures. This point is defined on the
curve by the snap-back voltage (VSB) and snap-back
Applications Information
Device Schematic & Pin Configuration
IPP
ISB
IPT
IR
V
RWM VV PT VC
VF
IF
SB
EPD TVS IV Characteristic Curve
current (ISB). To return to a non-conducting state, the
current through the device must fall below the ISB
(approximately <50mA) and the voltage must fall below
the VSB (normally 2.8 volts for a 3.3V device). If a 3.3V
TVS is connected to 3.3V DC source, it will never fall
below the snap-back voltage of 2.8V and will therefore
stay in a conducting state.
5
© 2008 Semtech Corp. www.semtech.com
PROTECTION PRODUCTS
uClamp3301H
Outline Drawing - SOD-523
Land Pattern - SOD-523
DIMENSIONS
DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS
OR GATE BURRS
.
CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
NOTES:
1.
2.
.027
MAX
.019
MIN
DIM
A.023
NOM
INCHES
0.60
NOM
MILLIMETERS
0.50
MIN
0.70
MAX
E1
E
B
2X b
aaa C A B
A
c
C
A
SEATING
PLANE
0.10
.003
c-.008 0.20
-
0.70
D.027 .035
.031 0.90
0.80
1.50E .059 .063 .067 1.70
1.60
1.10E1 .043 .051
.047 1.301.20
0.25
b.009 -.013 0.35
-
aaa .008 0.20
D
L1
L
L.003 .008 .011 0.10 0.20 0.30
L1 .003 .005 .008 0.10 0.15 0.20
NOTES:
1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY
CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR
COMPANY'S MANUFACTURING GUIDELINES ARE ME
T
DIM
Y
Z
G
X
C
MILLIMETERSINCHES
(1.45)
.033
.090
.018
.024
(.057)
0.85
2.30
0.45
0.60
DIMENSIONS
Z
C
G
Y
X
6© 2008 Semtech Corp. www.semtech.com
PROTECTION PRODUCTS
uClamp3301H
Marking Code
3H
Ordering Information
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MicroClamp, uClamp and μClamp are trademarks of Semtech
Corporation
Tape and Reel Specification
Tape Specifications
Device Orientation in Tape
7
© 2008 Semtech Corp. www.semtech.com
PROTECTION PRODUCTS
uClamp3301H
Contact Information
Semtech Corporation
Protection Products Division
200 Flynn Rd., Camarillo, CA 93012
Phone: (805)498-2111 FAX (805)498-3804
