ON Semiconductor NPN 2N6515 2N6517 PNP 2N6520 High Voltage Transistors MAXIMUM RATINGS Symbol 2N6515 2N6517 2N6520 Unit Collector-Emitter Voltage VCEO 250 350 Vdc Collector-Base Voltage VCBO 250 350 Vdc Emitter-Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520 VEBO Rating Voltage and current are negative for PNP transistors Vdc 6.0 5.0 Base Current IB 250 mAdc Collector Current - Continuous IC 500 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C Operating and Storage Junction Temperature Range TJ, Tstg -55 to +150 C 1 2 3 CASE 29-04, STYLE 1 TO-92 (TO-226AA) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W 2 BASE NPN 1 EMITTER COLLECTOR 3 2 BASE PNP 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 250 350 - - 250 350 - - 6.0 5.0 - - Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0 ) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)CEO 2N6515 2N6517, 2N6520 Vdc V(BR)CBO 2N6515 2N6517, 2N6520 Vdc V(BR)EBO 2N6515, 2N6517 2N6520 Vdc 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 3 97 Publication Order Number: 2N6515/D NPN 2N6515 2N6517 PNP 2N6520 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Max - - 50 50 - - 50 50 2N6515 2N6517, 2N6520 35 20 - - (IC = 10 mAdc, VCE = 10 Vdc) 2N6515 2N6517, 2N6520 50 30 - - (IC = 30 mAdc, VCE = 10 Vdc) 2N6515 2N6517, 2N6520 50 30 300 200 (IC = 50 mAdc, VCE = 10 Vdc) 2N6515 2N6517, 2N6520 45 20 220 200 (IC = 100 mAdc, VCE = 10 Vdc) 2N6515 2N6517, 2N6520 25 15 - - - - - - 0.30 0.35 0.50 1.0 - - - 0.75 0.85 0.90 Characteristic Unit OFF CHARACTERISTICS (Continued) Collector Cutoff Current (VCB = 150 Vdc, IE = 0) (VCB = 250 Vdc, IE = 0) 2N6515 2N6517, 2N6520 ICBO Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) 2N6515, 2N6517 2N6520 nAdc IEBO nAdc ON CHARACTERISTICS(1) DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) hFE - Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Vdc Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) VBE(sat) Base-Emitter On Voltage (IC = 100 mAdc, VCE = 10 Vdc) VBE(on) - 2.0 Vdc fT 40 200 MHz Ccb - 6.0 pF - - 80 100 Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product(1) (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) Collector-Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb 2N6515, 2N6517 2N6520 pF SWITCHING CHARACTERISTICS Turn-On Time (VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc) ton - 200 s Turn-Off Time (VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc) toff - 3.5 s 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 98 NPN 2N6515 2N6517 PNP 2N6520 hFE , DC CURRENT GAIN 200 VCE = 10 V TJ = 125C 100 25C 70 -55C 50 30 20 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 1. DC Current Gain - NPN 2N6515 VCE = 10 V 100 200 TJ = 125C VCE = -10 V hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 200 25C 70 50 -55C 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 100 30 20 BANDWIDTH PRODUCT (MHz) 50 TJ = 25C VCE = 20 V f = 20 MHz 20 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) f, T CURRENT-GAIN 70 2.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 3. DC Current Gain - PNP 2N6520 100 10 1.0 -55C 50 Figure 2. DC Current Gain - NPN 2N6517 30 25C 70 10 -1.0 50 70 100 TJ = 125C Figure 4. Current-Gain - Bandwidth Product - NPN 2N6515, 2N6517 100 70 50 30 TJ = 25C VCE = -20 V f = 20 MHz 20 10 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 5. Current-Gain - Bandwidth Product - PNP 2N6520 http://onsemi.com 99 NPN 2N6515 2N6517 PNP 2N6520 NPN 1.4 -1.4 TJ = 25C 1.2 -1.2 0.8 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.0 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 0.2 0 1.0 VCE(sat) @ IC/IB = 5.0 2.0 3.0 -1.0 -0.8 VBE(sat) @ IC/IB = 10 -0.6 VBE(on) @ VCE = -10 V -0.4 -0.2 VCE(sat) @ IC/IB = 10 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 0 -1.0 70 100 IC 10 IB 2.0 1.5 1.0 25C to 125C 0.5 0 RVC for VCE(sat) -55C to 25C -0.5 -1.0 -55C to 125C -1.5 RVB for VBE -2.0 -2.5 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 8. Temperature Coefficients - NPN 2N6515, 2N6517 Ceb 20 10 7.0 5.0 Ccb 3.0 2.5 2.0 1.5 -50 -70 -100 IC 10 IB 25C to 125C 1.0 0.5 0 RVB for VBE -55C to 25C -0.5 -1.0 -1.5 -2.0 -2.5 -1.0 100 70 50 TJ = 25C 30 VCE(sat) @ IC/IB = 5.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) RVC for VCE(sat) -55C to 125C -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 9. Temperature Coefficients - PNP 2N6520 C, CAPACITANCE (pF) C, CAPACITANCE (pF) 100 70 50 VCE(sat) @ IC/IB = 10 Figure 7. "On" Voltages - PNP 2N6520 RV, TEMPERATURE COEFFICIENTS (mV/C) RV, TEMPERATURE COEFFICIENTS (mV/C) Figure 6. "On" Voltages - NPN 2N6515, 2N6517 2.5 TJ = 25C 2.0 Ceb TJ = 25C 30 20 10 7.0 5.0 Ccb 3.0 2.0 1.0 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 1.0 -0.2 50 100 200 Figure 10. Capacitance - NPN 2N6515, 2N6517 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance - PNP 2N6520 http://onsemi.com 100 -100 -200 NPN 2N6515 2N6517 PNP 2N6520 1.0k 700 500 td @ VBE(off) = 2.0 V 200 VCE(off) = 100 V IC/IB = 5.0 TJ = 25C tr 100 70 50 100 70 50 30 30 20 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 10 -1.0 Figure 12. Turn-On Time - NPN 2N6515, 2N6517 10k 7.0k 5.0k 2.0k ts t, TIME (ns) 500 tf -50 -70 -100 ts 1.0k 700 2.0k tf 300 VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C 200 100 70 50 300 200 100 1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) Figure 13. Turn-On Time - PNP 2N6520 3.0k 1.0k 700 500 VCE(off) = -100 V IC/IB = 5.0 TJ = 25C tr 200 20 10 1.0 td @ VBE(off) = 2.0 V 300 t, TIME (ns) t, TIME (ns) 300 1.0k 700 500 VCE(off) = -100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C 30 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 14. Turn-Off Time - NPN 2N6515, 2N6517 20 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 15. Turn-Off Time - PNP 2N6520 http://onsemi.com 101 NPN 2N6515 2N6517 PNP 2N6520 +VCC VCC ADJUSTED FOR VCE(off) = 100 V +10.8 V 2.2 k 20 k 50 SAMPLING SCOPE 1.0 k 50 1/2MSD7000 -9.2 V PULSE WIDTH 100 s tr, tf 5.0 ns DUTY CYCLE 1.0% FOR PNP TEST CIRCUIT, REVERSE ALL VOLTAGE POLARITIES APPROXIMATELY -1.35 V (ADJUST FOR V(BE)off = 2.0 V) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 16. Switching Time Test Circuit 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.1 0.07 0.05 SINGLE PULSE 0.05 SINGLE PULSE ZJC(t) = r(t) * RJC TJ(pk) - TC = P(pk) ZJC(t) ZJA(t) = r(t) * RJA TJ(pk) - TA = P(pk) ZJA(t) 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k Figure 17. Thermal Response IC, COLLECTOR CURRENT (mA) 500 TA = 25C 200 100 PP 100 ms 20 CURRENT LIMIT THERMAL LIMIT (PULSE CURVES @ TC = 25C) SECOND BREAKDOWN LIMIT 10 5.0 2.0 CURVES APPLY BELOW RATED VCEO 1.0 0.5 tP 1.0 ms TC = 25C 50 FIGURE A 10 s 100 s 0.5 1.0 PP t1 2N6515 1/f t DUTYCYCLE t1f 1 tP PEAK PULSE POWER = PP 2N6517, 2N6520 2.0 5.0 10 20 50 100 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 18. Active Region Safe Operating Area 500 Design Note: Use of Transient Thermal Resistance Data http://onsemi.com 102