MRF174 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI MRF174 is a gold metallized N-Channel enhancement mode MOSFET, intended for use in 28 VDC large signal applications to 200 MHz. PACKAGE STYLE .500 4L FLG .112x45 L A S FULL R FEATURES: D O .125 N O M . C * PG = 9.0 dB min. at 150 MHz * OmnigoldTM Metalization System * Class-A B S G E D G H F K I J MAXIMUM RATINGS DIM M INIM UM inches / m m inches / m m A .220 / 5.59 .230 / 5.84 M AXIM U M ID 13 A VDSS 65 V B C .245 / 6.22 .255 / 6.48 VGS 40 V D .720 / 18.28 .7.30 / 18.54 65 V PDISS 270 W @ TC = 25 C -65 C to +200 C F .970 / 24.64 .980 / 24.89 G .495 / 12.57 .505 / 12.83 H .003 / 0.08 .007 / 0.18 I .090 / 2.29 .110 / 2.79 J .150 / 3.81 .175 / 4.45 .980 / 24.89 1.050 / 26.67 TSTG -65 C to +150 C JC 0.65 C/W .280 / 7.11 K L CHARACTERISTICS .125 / 3.18 E VDGR TJ .125 / 3.18 NONE TC = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM BVDSS ID = 50 mA IDSS VDS = 28 V VGS = 0 V 10 mA IGSS VDS = 0 V VGS = 20 V 1.0 A ID = 100 mA VDS = 10 V 1.0 3.0 6.0 V ID = 3.0 A VDS = 10 V 1.75 2.5 mho pF dB dB % VGS(th) gfs 65 UNITS V Ciss Coss Crss VDS = 28 V VGS = 0 V f = 1.0 MHz 175 190 40 NF PG D ID = 2.0 A VDD = 28 V IDQ = 100 mA VDD = 28 V IDQ = 250 mA f = 150 MHz Pout = 125 W f = 150 MHz 3.0 11.8 60 9.0 50 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Advanced Semiconductor, Inc.: MRF174