1White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
HI-RELIABILITY PRODUCT
WMF128K8-XXX5
128Kx8 MONOLITHIC FLASH, SMD 5962-96690
FEATURES
■Access Times of 50*, 60, 70, 90, 120, 150ns
■Packaging
•32 lead, Hermetic Ceramic, 0.400" SOJ (Package 101)
•32 pin, Hermetic Ceramic, 0.600" DIP (Package 300)
• 32 lead, Flatpack (Package 220)
• 32 lead, Formed Flatpack (Package 221)
• 32 pin, Rectangular Ceramic Leadless Chip Carrier
(Package 601)
■100,000 Erase/Program Cycles Minimum
■Sector Erase Architecture
• 8 equal size sectors of 16KBytes each
• Any combination of sectors can be concurrently
erased. Also supports full chip erase
PIN CONFIGURATION FOR WMF128K8-XXX5
A0-16 Address Inputs
I/O0-7 Data Input/Output
CS Chip Select
OE Output Enable
WE Write Enable
VCC +5.0V Power
VSS Ground
PIN DESCRIPTION
TOP VIEW
32 DIP
32 CSOJ
32 FLATPACK
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
V
CC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
4321323130
14 15 16 17 18 19 20
A7
A6
A5
A4
A3
A2
A1
A0
I/O
0
I/O1
I/O2
V
SS
I/O3
I/O4
I/O5
I/O6
A14
A13
A8
A9
A11
OE
A10
CS
I/O7
A12
A15
A16
NC
V
CC
WE
NC
PIN CONFIGURATION FOR WMF128K8-XCLX5
TOP VIEW
32 CLCC
■Organized as 128Kx8
■Commercial, Industrial and Military Temperature Ranges
■5 Volt Programming. 5V ± 10% Supply.
■Low Power CMOS
■Embedded Erase and Program Algorithms
■TTL Compatible Inputs and CMOS Outputs
■Page Program Operation and Internal Program Control Time.
Note: For programming information refer to Flash Programming 1M5
Application Note.
* The access time of 50ns is available in Industrial and Commercial
temperature ranges only.
April 2001 Rev. 5
2
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WMF128K8-XXX5
ABSOLUTE MAXIMUM RATINGS (1)
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage
to the device. Extended operation at the maximum levels may degrade
performance and affect reliability.
2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions,
inputs may overshoot VSS to -2.0 V for periods of up to 20ns. Maximum DC
voltage on output and I/O pins is VCC + 0.5V. During voltage transitions,
outputs may overshoot to Vcc + 2.0 V for periods of up to 20ns.
3. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9 may
overshoot Vss to -2V for periods of up to 20ns. Maximum DC input voltage on A9
is +13.5V which may overshoot to 14.0 V for periods up to 20ns.
DC CHARACTERISTICS - CMOS COMPATIBLE
(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
Parameter Unit
Operating Temperature -55 to +125 °C
Supply Voltage Range (VCC) -2.0 to +7.0 V
Signal voltage range (any pin except A9) (2) -2.0 to +7.0 V
Storage Temperature Range -65 to +150 °C
Lead Temperature (soldering, 10 seconds) +300 °C
Data Retention Mil Temp 10 years
Endurance (write/erase cycles) Mil Temp 10,000 min. cycles
A9 Voltage for sector protect (VID) (3) -2.0 to +14.0 V
Parameter Symbol Conditions Min Max Unit
Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC 10 µA
Output Leakage Current ILO VCC = 5.5, VIN = GND to VCC 10 µA
VCC Active Current for Read (1) ICC1 CS = VIL, OE = VIH 35 mA
VCC Active Current for Program ICC2 CS = VIL, OE = VIH 50 mA
or Erase (2)
VCC Standby Current ICC3 VCC = 5.5, CS = VIH, f = 5MHz 1.6 mA
Output Low Voltage VOL IOL = 8.0 mA, VCC = 4.5 0.45 V
Output High Voltage VOH1 IOH = -2.5 mA, VCC = 4.5 0.85 x VCC V
Output High Voltage VOH2 IOH = -100 µA, VCC = 4.5 VCC - 0.4 V
Low VCC Lock Out Voltage VLKO 3.2 V
CAPACITANCE
(TA = +25°C)
Parameter
Symbol
Conditions Max Unit
Address Input capacitance CAD
V
I/O
= 0 V, f = 1.0 MHz
15 pF
Output Enable capacitance COE
V
IN
= 0 V, f = 1.0 MHz
15 pF
Write Enable capacitance CWE
V
IN
= 0 V, f = 1.0 MHz
15 pF
Chip Select capacitance CCS
V
IN
= 0 V, f = 1.0 MHz
15 pF
Data I/O capacitance CI/O
V
I/O
= 0 V, f = 1.0 MHz
15 pF
This parameter is guaranteed by design but not tested.
RECOMMENDED OPERATING CONDITIONS
Parameter Symbol Min Max Unit
Supply Voltage VCC 4.5 5.5 V
Input High Voltage VIH 2.0 VCC + 0.3 V
Input Low Voltage VIL -0.5 +0.8 V
Operating Temp. (Mil.) TA-55 +125 °C
Operating Temp. (Ind.) TA-40 +85 °C
A9 Voltage for Sector Protect VID 11.5 12.5 V
NOTES:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 5 MHz).
The frequency component typically is less than 2 mA/MHz, with OE at VIH.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
AC TEST CIRCUIT AC TEST CONDITIONS
I
Current Source
D.U.T.
C = 50 pf
eff
I
OL
V
≈
1.5V
(Bipolar Supply)
Z
Current Source
OH
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 Ω.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
Parameter Typ Unit
Input Pulse Levels VIL = 0, VIH = 3.0 V
Input Rise and Fall 5 ns
Input and Output Reference Level 1.5 V
Output Timing Reference Level 1.5 V
3White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WMF128K8-XXX5
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, WE CONTROLLED
(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
Parameter Symbol -50 -60 -70 -90 -120 -150 Unit
Min Max Min Max Min Max Min Max Min Max Min Max
Write Cycle Time tAVAV tWC 50 60 70 90 120 150 ns
Chip Select Setup Time tELWL tCS 000000ns
Write Enable Pulse Width tWLWH tWP 25 30 35 45 50 50 ns
Address Setup Time tAVWL tAS 000000ns
Data Setup Time tDVWH tDS 25 30 30 45 50 50 ns
Data Hold Time tWHDX tDH 000000ns
Address Hold Time tWLAX tAH 40 45 45 45 50 50 ns
Chip Select Hold Time tWHEH tCH 000000ns
Write Enable Pulse Width High tWHWL tWPH 20 20 20 20 20 20 ns
Duration of Byte Programming Operation (min) tWHWH1 14 14 14 14 14 14 µs
Sector Erase Time tWHWH2 2.2 60 2.2 60 2.2 60 2.2 60 2.2 60 2.2 60 sec
Read Recovery Time Before Write tGHWL 000000ns
VCC Setup Time tVCS 50 50 50 50 50 50 µs
Chip Programming Time 12.5 12.5 12.5 12.5 12.5 12.5 sec
Output Enable Setup Time tOES 000000ns
Output Enable Hold Time (1) tOEH 10 10 10 10 10 10 ns
1. For Toggle and Data Polling.
Parameter Symbol -50 -60 -70 -90 -120 -150 Unit
Min Max Min Max Min Max Min Max Min Max Min Max
Read Cycle Time tAVAV tRC 50 60 70 90 120 150 ns
Address Access Time tAVQV tACC 50 60 70 90 120 150 ns
Chip Select Access Time tELQV tCE 50 60 70 90 120 150 ns
OE to Output Valid tGLQV tOE 25 30 35 40 50 55 ns
Chip Select to Output High Z (1) tEHQZ tDF 20 20 20 25 30 35 ns
OE High to Output High Z (1) tGHQZ tDF 20 20 20 25 30 35 ns
Output Hold from Address, CS or OE Change, tAXQX tOH 00 000 0ns
whichever is first
1. Guaranteed by design, not tested.
AC CHARACTERISTICS – READ ONLY OPERATIONS
(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
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AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, CS CONTROLLED
(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
Parameter Symbol -50 -60 -70 -90 -120 -150 Unit
Min Max Min Max Min Max Min Max Min Max Min Max
Write Cycle Time tAVAV tWC 50 60 70 90 120 150 ns
WE Setup Time tWLEL tWS 000000ns
CS Pulse Width tELEH tCP 25 30 35 45 50 50 ns
Address Setup Time tAVEL tAS 000000ns
Data Setup Time tDVEH tDS 25 30 30 45 50 50 ns
Data Hold Time tEHDX tDH 000000ns
Address Hold Time tELAX tAH 40 45 45 45 50 50 ns
WE Hold from WE High tEHWH tWH 000000ns
CS Pulse Width High tEHEL tCPH 20 20 20 20 20 20 ns
Duration of Programming Operation tWHWH1 14 14 14 14 14 14 µs
Duration of Erase Operation tWHWH2 2.2 60 2.2 60 2.2 60 2.2 60 2.2 60 2.2 60 sec
Read Recovery before Write tGHEL 000000ns
Chip Programming Time 12.5 12.5 12.5 12.5 12.5 12.5 sec
WMF128K8-XXX5
5White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
AC WAVEFORMS FOR READ OPERATIONS
Addresses
CS
OE
WE
Outputs High Z
Addresses Stable
t
OE
t
RC
Output Valid
t
CE
t
ACC
t
OH
High Z
t
DF
WMF128K8-XXX5
6
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WRITE/ERASE/PROGRAM OPERATION, WE CONTROLLED
NOTES:
1. PA is the address of the memory location
to be programmed.
2. PD is the data to be programmed at byte address.
3. I/O7 is the output of the complement of the
data written to the device.
4. I/OOUT is the output of the data written to
the device.
5. Figure indicates last two bus cycles of four bus
cycle sequence.
Addresses
CS
OE
WE
Data
5.0 V
5555H PA PA
tWC
tCS
PD I/O7I/OOUT
tAH
tWPH
tDH
tDS
Data Polling
tAS tRC
tWP
A0H
tOE tDF
tOH
tCE
tGHWL
tWHWH1
WMF128K8-XXX5
7White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
AC WAVEFORMS CHIP/SECTOR ERASE OPERATIONS
NOTES:
1. SA is the sector address
for Sector Erase.
Addresses
CS
OE
WE
Data
V
CC
5555H 2AAAH 2AAAH SA5555H 5555H
t
WP
t
CS
t
VCS
10H/30H55H80H55H AAHAAH
t
AH
t
AS
t
GHWL
t
WPH
t
DH
t
DS
WMF128K8-XXX5
8
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AC WAVEFORMS FOR DATA POLLING DURING
EMBEDDED ALGORITHM OPERATIONS
CS
OE
WE
tOE
tOE
tCE
tCH
tOH
I/O7I/O7 =
Valid Data High Z
I/O0-6 = Invalid I/O0-7
Valid Data
tDF
I/O7
I/O0-6
tOEH
tWHWH 1 or 2
Data
WMF128K8-XXX5
9White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WRITE/ERASE/PROGRAM OPERATION, CS CONTROLLED
NOTES:
1. PA represents the address of the memory location to be programmed.
2. PD represents the data to be programmed at byte address.
3. I/O7 is the output of the complement of the data written to the device.
4. I/OOUT is the output of the data written to the device.
5. Figure indicates the last two bus cycles of a four bus cycle sequence.
Addresses
WE
OE
CS
Data
5.0 V
5555H PA PA
t
WC
t
WS
PD I/O
7
I/O
OUT
t
AH
t
CPH
t
CP
t
DH
t
DS
Data Polling
t
AS
t
GHEL
A0H
t
WHWH1
WMF128K8-XXX5
10
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 101: 32 LEAD, CERAMIC SOJ
1.27 (0.050) TYP
21.1 (0.830) ± 0.25 (0.010)
PIN 1 IDENTIFIER
19.1 (0.750) TYP
11.3 (0.446)
± 0.2 (0.009)
3.96 (0.156) MAX
0.2 (0.008)
± 0.05 (0.002)
9.55 (0.376) ± 0.25 (0.010)
1.27 (0.050) ± 0.25 (0.010)
0.89 (0.035)
Radius TYP
PACKAGE 220: 32 LEAD, CERAMIC FLATPACK
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
10.41 (0.410)
± 0.13 (0.005)
2.60 (0.102) MAX
0.127 (0.005)
+ 0.05 (0.002)
–
0.025 (0.001)
PIN 1
IDENTIFIER
1.27 (0.050) TYP
19.05 (0.750) TYP
10.16 (0.400)
± 0.51 (0.020)
0.43 (0.017)
± 0.05 (0.002)
20.83 (0.820)
± 0.25 (0.010)
WMF128K8-XXX5
11 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED
2.5 (0.100)
TYP 1.27 (0.050)
± 0.1 (0.005) 0.46 (0.018)
± 0.05 (0.002)
0.99 (0.039)
± 0.51 (0.020)
3.2 (0.125) MIN 0.25 (0.010)
± 0.05 (0.002)
15.25 (0.600)
± 0.25 (0.010)
42.8 (1.686) MAX
5.13 (0.202) MAX
PIN 1 IDENTIFIER
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 221: 32 LEAD, FORMED CERAMIC FLATPACK
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
10.41 (0.410)
± 0.13 (0.005)
1.27 (0.050) TYP
19.05 (0.750) TYP 1.52 (0.060) TYP
0.43 (0.017)
± 0.05 (0.002)
20.83 (0.820)
± 0.25 (0.010)
3.35 (0.132)
MAX
1.27 (0.050) TYP
0.15 (0.006)
TYP
0° / -4°
0.63 (0.025) TYP
+
+
13.47 (0.530)
± 0.13 (0.005)
WMF128K8-XXX5
12
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
7.62 (0.300) TYP
5.08
(0.200)
TYP
3.81
(0.150) TYP
10.16
(0.400)
TYP
0.38 (0.015) x 45°
PIN 1 IDENTIFIER
0.56 (0.022)
0.71 (0.028)
11.25 (0.443)
11.60 (0.457)
13.79 (0.543)
14.15 (0.557)
1.63 (0.064)
2.54 (0.100)
PIN 1
1.02 (0.040) x 45°
3 PLACES 32PinCLCCpkgdim.eps
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 601: 32 PIN, RECTANGULAR CERAMIC LEADLESS CHIP CARRIER
WMF128K8-XXX5
13 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
VPP PROGRAMMING VOLTAGE
5 = 5V
DEVICE GRADE:
Q = MIL-STD-883 Compliant
M = Military Screened -55°C to +125°C
I = Industrial -40°C to +85°C
C = Commercial 0°C to +70°C
PACKAGE TYPE:
DE = 32 Lead Ceramic SOJ (Package 101)
C = 32 Pin Ceramic DIP (Package 300)
FE = 32 Lead Ceramic Flatpack (Package 220)
FF = 32 Lead Formed Ceramic Flatpack (Package 221)
CL = 32 Pin rectangular Ceramic Leadless Chip Carrier (Package 601)
ACCESS TIME (ns)
ORGANIZATION, 128K x 8
Flash
MONOLITHIC
WHITE ELECTRONIC DESIGNS CORP.
ORDERING INFORMATION
W M F 128K8 - XXX X X 5 X
WMF128K8-XXX5
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DEVICE TYPE SECTOR SIZE SPEED PACKAGE SMD NO.
128K x 8 Flash Monolithic 16KByte 150ns 32 pin DIP (C) 5962-96690 01HYX
128K x 8 Flash Monolithic 16KByte 120ns 32 pin DIP (C) 5962-96690 02HYX
128K x 8 Flash Monolithic 16KByte 90ns 32 pin DIP (C) 5962-96690 03HYX
128K x 8 Flash Monolithic 16KByte 70ns 32 pin DIP (C) 5962-96690 04HYX
128K x 8 Flash Monolithic 16KByte 60ns 32 pin DIP (C) 5962-96690 05HYX
128K x 8 Flash Monolithic 16KByte 150ns 32 lead SOJ (DE) 5962-96690 01HXX
128K x 8 Flash Monolithic 16KByte 120ns 32 lead SOJ (DE) 5962-96690 02HXX
128K x 8 Flash Monolithic 16KByte 90ns 32 lead SOJ (DE) 5962-96690 03HXX
128K x 8 Flash Monolithic 16KByte 70ns 32 lead SOJ (DE) 5962-96690 04HXX
128K x 8 Flash Monolithic 16KByte 60ns 32 lead SOJ (DE) 5962-96690 05HXX
128K x 8 Flash Monolithic 16KByte 150ns 32 lead Flatpack (FE) 5962-96690 01HTX
128K x 8 Flash Monolithic 16KByte 120ns 32 lead Flatpack (FE) 5962-96690 02HTX
128K x 8 Flash Monolithic 16KByte 90ns 32 lead Flatpack (FE) 5962-96690 03HTX
128K x 8 Flash Monolithic 16KByte 70ns 32 lead Flatpack (FE) 5962-96690 04HTX
128K x 8 Flash Monolithic 16KByte 60ns 32 lead Flatpack (FE) 5962-96690 05HTX
128K x 8 Flash Monolithic 16KByte 150ns 32 lead Formed Flatpack (FF) 5962-96690 01HUX
128K x 8 Flash Monolithic 16KByte 120ns 32 lead Formed Flatpack (FF) 5962-96690 02HUX
128K x 8 Flash Monolithic 16KByte 90ns 32 lead Formed Flatpack (FF) 5962-96690 03HUX
128K x 8 Flash Monolithic 16KByte 70ns 32 lead Formed Flatpack (FF) 5962-96690 04HUX
128K x 8 Flash Monolithic 16KByte 60ns 32 lead Formed Flatpack (FF) 5962-96690 05HUX
WMF128K8-XXX5
