©2003 Fairchild Semiconductor Corporation FGA50N60LS Rev. A
IGBT
FGA50N60LS
FGA50N60LS
General Description
Fairchild's LS series product of Insulated Gate Bipolar
Transistors (IGBTs) provides low conduction and switching
losses as well as short circuit ruggedness. The LS series is
especially designed for applications in medium frequencies
such as switched reluctance motor controls, AC & DC
motor controls, general inverters etc.
Features
• Short circuit rated 10µs @ TC = 100°C, VGE = 15V
• Low saturation voltage : VCE(sat) = 1.6 V @ IC = 50A
• High input impedance
• Optimized for medium operating frequencies (1~5kHz)
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteris ti cs
Symbol Description FGA50N60LS Units
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage ± 20 V
ICCollector Current @ TC = 25°C 100 A
Collector Current @ TC = 100°C 50 A
ICM (1) Pulsed Collector Current 150 A
TSC Short Circuit Withstand Time @ TC = 100°C 10 µs
PDMaximum Power Dissipation @ TC = 25°C 240 W
Maximum Power Dissipation @ TC = 100°C 96 W
TJ Operating Junction Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
TLMaximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 °C
Symbol Parameter Typ. Max. Units
RθJC Thermal Resistance, Junction-to- Case -- 0.52 °C/W
RθJA Thermal Resistance, Junction-to- Am bient -- 40 °C/W
Applications
Switched Reluctance Motor Controls , AC & DC motor controls, general purpose inverters,Robot ics, and Servo controls
G
C
E
G
C
E
GCETO-3P
FGA50N60LS Rev. A
FGA50N60LS
©2003 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVCES Collector-Emitter Breakdown Volt age VGE = 0V, IC = 250uA 600 -- -- V
∆BVCES/
∆TJ
Temperature Coefficient of Breakdown
Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/°C
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA
IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA
On Characteri st ics
VGE(th) G-E Threshold Voltage IC = 50mA, VCE = VGE 3.5 5.5 7.5 V
VCE(sat) Collector to Emitter
Saturation V oltage IC = 50A, VGE = 15V -- 1.6 1.8 V
IC = 80A, VGE = 15V -- 1.96 -- V
Dynamic Characteristics
Cies Input Capacitance VCE = 30V, VGE = 0V,
f = 1M H z
-- 2660 -- pF
Coes Output Capacitance -- 250 -- pF
Cres Reverse Transfer Capacitance -- 78 -- pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 300 V, IC = 50A,
RG = 5.9Ω, VGE = 15V,
Inductive Load, TC = 25°C
-- 54 -- ns
trRise Time -- 96 -- ns
td(off) Turn-Off D e l a y Time -- 146 220 ns
tfFall Time -- 326 600 ns
Eon Turn-On Switching Loss -- 1.1 -- mJ
Eoff Turn- Off Sw i t c h i n g Loss -- 3 .2 -- mJ
Ets Total Switching Loss -- 4.3 6.0 mJ
td(on) Turn-On Delay Time
VCC = 300 V, IC = 50A,
RG = 5.9Ω, VGE = 15V,
Inductive Load, TC = 125°C
-- 56 -- ns
trRise Time -- 87 -- ns
td(off) Turn-Off D e l a y Time -- 134 215 ns
tfFall Time -- 575 880 ns
Eon Turn-On Switching Loss -- 1.2 -- mJ
Eoff Turn- Off Sw i t c h i n g Loss -- 5 .0 -- mJ
Ets Total Switching Loss -- 6.2 8.7 mJ
Tsc Short Circuit Withstand Time VCC =300 V, VGE = 15V
@ TC = 100°C 10 -- -- µs
QgTotal Gate Charge VCE = 300 V, IC = 50A,
VGE = 15V
-- 167 240 nC
Qge Gate-Emitter Charge -- 27 35 nC
Qgc Gate-Collector Charge -- 68 100 nC
LeInternal Emitter Inductance Measured 5mm from PKG -- 1 4 -- nH
FGA50N60LS Rev. A
FGA50N60LS
©2003 Fairchild Semiconductor Corporation
Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics
Fig 3. Saturat i on Voltage vs. Ca se
Temperature at Variant Current Level Fig 4. Load Cu rrent vs. Freque ncy
Fig 5. Satur atio n Voltage vs. VGE Fig 6. Saturation Voltage vs. VGE
110
0
20
40
60
80
100
120
140 Common Emitter
VGE = 15 V
TC = 25oC
TC = 12 5oC
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
-50 0 50 100 150
1.0
1.5
2.0
2.5
3.0
100A
Common Emitter
VGE = 15V
IC = 30A
50A
Collector - Em itter Vo ltage , V CE [V]
Case Temperature, TC [oC]
0.1 1 10 100 1000
0
10
20
30
40
50
60 Vcc = 300V
Load C urren t : peak of squa re wa v e
Duty cycle : 50%
Tc = 100oC
Power Dissipation = 48W
Load Current [A]
Frequency [kHz]
048121620
0
4
8
12
16
20 Common Emitter
TC = 25oC
100A
50A
IC = 30A
Colle c to r - E mitter V o lta ge , V CE [V]
Gate - Emitter Vo ltage, VGE [V]
0 4 8 121620
0
4
8
12
16
20 Common Emitter
TC = 125oC
100A
50A
IC = 30A
Collector - Emitter Voltage, V
CE [V]
Gate - Emitter Voltage, VGE [V]
02468
0
20
40
60
80
100
120
140
VGE = 8V
Common Emitter
TC = 25oC
12V
15V
20V
10V
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
FGA50N60LS Rev. A
FGA50N60LS
©2003 Fairchild Semiconductor Corporation
Fig 7. Capac itance Charact er i stics Fig 8. Turn-On Char ac te ri st i cs vs.
Gate Resistance
Fig 9. Turn-Off Characterist ic s vs.
Gate Resistance Fig 10. S witching Loss vs. Gat e R es is ta nce
Fig 11. Tur n-On Charac te ri st i cs vs.
Collector Current Fig 12 . Turn-Of f Characteristics vs.
Collector Current
10 100
100
1000 Common Emitter
VCC = 300V, VGE = +15V
IC = 50A
TC = 25oC
TC = 125 oC
Tr
Ton
Switch ing T im e [ns]
Gate Resistance, RG [Ω]
10 100
100
1000
Tf
Common Emitter
VCC = 300V, VGE = +15V
IC = 50A
TC = 25oC
TC = 125 oC
Tf
Toff
Switch ing T im e [ns]
Gate Resistance, RG [Ω]
10 100
1000
10000
Common Emitter
VCC = 300V, VGE = +15V
IC = 50A
TC = 25 oC
TC = 125oC
Eoff
Eon
Eoff
Switch in g Los s [uJ ]
Gate Resistance, RG [Ω]
20 40 60 80 100
10
100
1000
Toff
Tf
10
Common Emitter
VGE = +15V, R G = 5.9Ω
TC = 25oC
TC = 1 2 5 oC
Tf
Toff
Switchin g T im e [n s]
Collector Current, IC [A]
20 40 60 80 100
10
100
1000
10
Comm on Emitter
VGE = +15V, RG = 5.9Ω
TC = 25 oC
TC = 125oC
Tr
Ton
Switch in g Tim e [ns ]
Collector Current, IC [A]
110
0
1000
2000
3000
4000
5000
6000
7000 Common Emitter
VGE = 0V , f = 1 MHz
TC = 25oC
Cies
Coes
Cres
Capacitance [pF]
Collector - Emitter Voltage, VCE [V]
FGA50N60LS Rev. A
FGA50N60LS
©2003 Fairchild Semiconductor Corporation
10-5 10-4 10-3 10-2 10-1 100101
1E-3
0.01
0.1
1
10
0.1
0.5
0.2
0.05
0.02
0.01 single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Fig 14. Gat e Ch a rge Charac te ristics
Fig 15. SOA Characteristics Fig 16. Turn-Off SOA
Fig 17. Transient Thermal Imped anc e of IGBT
Fig 13. Switching Loss vs. Collector Current
Pdm
t1
t2
Du ty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
20 40 60 80 100
100
1000
10000
10
Common Emitter
VGE = +15V, R G = 5.9Ω
TC = 25oC
TC = 125oC
Eon
Eoff
Eon
Eoff
Switching Loss [uJ]
Collector Current, IC [A]
0 30 60 90 120 150 180
0
3
6
9
12
15
200V
300V
Vcc=100V
Common Em itter
RL= 6 Ω
Tc=25oC
G a te -Emitter Voltage, V GE (V)
Gate C harge, Qg (nC )
1 10 100 1000
1
10
100
Safe Operating A rea
VGE = 2 0V , TC = 100oC
Collector - Emitter Voltage, VCE [V]
Co lle c to r Cur re n t, I C [A ]
0.1 1 10 100 1000
0.1
1
10
100
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
line arly w ith incr e a s e
in temperature
50µs
100µs
1ms
DC Operation
IC MAX. (Pulsed)
IC MAX. (Continuous)
Collector Current, I C [A]
Collector - Emitter Voltage, VCE [V]
©2003 Fairchild Semiconductor Corporation FGA50N60LS Rev. A
FGA50N60LS
Package Dimension
15.60 ±0.20 4.80 ±0.20
13.60 ±0.20
9.60 ±0.20
2.00 ±0.20
3.00 ±0.20
1.00 ±0.20 1.40 ±0.20
ø3.20 ±0.10
3.80 ±0.20
13.90 ±0.20
3.50 ±0.20
16.50 ±0.30
12.76 ±0.20
19.90 ±0.20
23.40 ±0.20
18.70 ±0.20
1.50 +0.15
–0.05
0.60 +0.15
–0.05
5.45TYP
[5.45 ±0.30]5.45TYP
[5.45 ±0.30]
TO-3P
Dimensions in Millimeters
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devic es or syst em s
which, (a) ar e intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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