© 2005 IXYS All rights reserved
VCES = 1700 V
IC25 = 26 A
VCE(sat) = 5.2 V
tfi(typ) = 50 ns
IXGR 32N170AH1
G = Gate, C = Collector,
E = Emitter
Features
zElectrically Isolated tab
zHigh current handling capability
zMOS Gate turn-on
- drive simplicity
zRugged NPT structure
zMolding epoxies meet UL 94 V-0
flammability classification
Applications
zCapacitor discharge & pulser circuits
zAC motor speed control
zDC servo and robot drives
zDC choppers
zUninterruptible power supplies (UPS)
zSwitched-mode and resonant-mode
power supplies
DS99233A(05/05)
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified)
min. typ. max.
BVCES IC= 1mA, VGE = 0 V 1700 V
VGE(th) IC= 250 µA, VCE = VGE 3.0 5.0 V
ICES VCE = 0.8 • VCES 100 µA
VGE = 0 V, Note 1 TJ = 125°C3mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= IT, VGE = 15 V 4.2 5.2 V
Notes 2, 3 TJ = 125°C 5.0 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 1700 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ1700 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C26A
IC90 TC= 90°C14A
IF90 14 A
ICM TC= 25°C, 1 ms 200 A
SSOA VGE = 15 V, TVJ = 125°C, RG = 5Ω ICM = 70 A
(RBSOA) Clamped inductive load @ 0.8 VCES
tSC TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω 10 µs
PCTC= 25°C 200 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
F
CMounting force with clamp 22...130/5...30 N/lb
VISOL 50/60 Hz, 1 minute 2500 ~V
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Weight 5g
High Voltage
IGBT with Diode
Advance Technical Information
Electrically Isolated Tab
ISOLATED TAB
E
G
C
ISOPLUS247 (IXGR)
E153432
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463
IXGR 32N170AH1
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified)
min. typ. max.
gfs IC= IT VCE = 10 V, Note 2 16 26 S
Cies 3670 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 215 pF
Cres 44 pF
Qg155 nC
Qge IC = IT VGE = 15 V, VCE = 0.5 VCES 26 nC
Qgc 56 nC
td(on) 46 ns
tri 57 ns
td(off) 260 500 ns
tfi 50 100 ns
Eoff 1.5 2.6 mJ
td(on) 48 ns
tri 59 ns
Eon 5.0 mJ
td(off) 300 ns
tfi 70 ns
Eoff 2.4 mJ
RthJC 0.65 K/W
RthCK 0.15 K/W
Inductive load, TJ = 125°°
°°
°C
IC = IT, VGE = 15 V
RG = 2.7 Ω, VCE = 0.8 VCES
Note 4
Inductive load, TJ = 25°°
°°
°C
IC = IT, VGE = 15 V
RG = 2.7 Ω, VCE = 0.8 VCES
Note 4
Notes: 1. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
3. Test current IT = 21 A
4. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG.
5. See IXGH32N170A datasheets for additional IGBT characteristics.
ISOPLUS247 Outline
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol Test Conditions min. typ. max.
VFIF = 20A, VGE = 0 V, Note 2 2.85 V
TJ = 150°C 2.9 V
VTO For conduction power losses only 2.1 V
rFO TJ = 150°C40mΩ
IRM IF = 20A, VGE = 0 V, VR = 1200 V 23 A
-diF/dt = 450 A/µsT
J = 125°C27 A
trr 230 ns
TJ = 125°C 400 ns
RthJC 1.5 K/W
