ww Tamwomtens oo T1 8 LLE DO | 4455452 d004Sb4 2 i Data Sheet No. PD-9.376G INTERNATIONAL RECTIFIER , 7-3? -7F INTERNATIONAL RECTIFIER | TOaR | REPETITIVE AVALANCHE AND dv/dt RATED* _ HEXFET TRANSISTORS | _IRFS40 : IRFB41 6 N-CHANNEL IRE8S4de2 5. : IRFS43 te oe 500 Volt, 0.85 Ohm HEXFET - Product Summary incase TO-220AB Plastic Package Part Number | Vps Rpsvon) Ip The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. IRF840 500V 0.852 8.0A The efficient geometry and unique processing of this latest State of the Art design achieves: very low on-state IRF641 450V 0.850 8.0A resistance combined with high transconductance; superior IRF842 _ 500V 119 70A reverse energy and diode recovery dv/dt capability. IRF843 ~ 450V 119 | 70A The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage FEATURES: control, very fast switching, ease of paralleling and 1g: . temperature stability of the electrical parameters. Repetitive Avalanche Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. 287(0 3) ja 29 (0 405) 2.62 (0.103) | 3,78 (0.149) 364 (0.139) O'A- CASE STYLE AND DIMENSIONS 1054 (0418) 1.32 {0.062} [*- 122 ods) 10.54 (0.415) , TERM 3 ~ SOURCE MAX. . TERM 2 ~DRAIN 15.09 sce coe TERM 1 - GATE 1.15 (0 45) MIN. 457 (0.180) i 15.09 (0.594) MAX. 279(0.110) __| 2 29 {0 030) > $6.33 (0210) 83 10.190) x SECTION X-X 13.97 (0.550) b l 051 (00201 MAX. _ 41 (0.016) bo| t 0.939 (0.037) 1.40 (0.058) le 0686 (0027) t 289 (0 114) 15 (0045) en Case Style TO-220A8 Dimensions in Millimeters and (inches) ' *This data sheet applies to product with batch codes that begin with a Oe a7LLE D i 4855452 OO08S69 4 i IRF840, IRF841, IRF842, IRF843 Devices _ T-39-13 INTERNATIONAL RECTIFIER Absolute Maximum Ratings Parameter IRF840, IRF841 IRF842, IRF843 Units t Ip @ Tc = 25C Continuous Drain Current 8.0 7.0 A !p @ Te = 100C ~ Continuous Drain Current 51 44 A lpm Pulsed Drain Current 32 . 28 A Pp @ Tc = 25C Max. Power Dissipation 125 Linear Derating Factor 10 WIK Ves Gate-ta-Source Voltage +20 Eas Single Pulse Avalanche Energy 510 : md (See Fig. 14) laR Avalanche Current 8.0 A (Repetitive or Non-Repetitive) {See Ean) Ear Repetitive Avalanche Energy See lap) mJ dv/dt Peak Diode Recovery dvidt 35 Mins . (See Fig. 17) Ty Operating Junction 65 to 150 c Tst Storage Temperature Range Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C Electrical Characteristics @ T, = 25c (Unless Otherwise Specified) Parameter Type Min. Typ. Max. | Units Tast Conditions : BVpsg__Drain-to-Source Breakdown Voltage IRF840) cao IRF642 -|- V_ | Vag = 0V. Ip = 250 pA IRF841 inre43 | 450 Rpston) Static Drain-to-Source iRF840/ _ 0.70 | 0.85 : On-State Resistance IRFS41 Q Veg = 10, Ip = 4.44 IRF842 IRFB43 - 0.85 11 | On-State Drain Current @ IRF840 . Ben) wrest] | f+ | 4 | Yas > IptontX Roston) Max. IRF842 1 79 Vas = tov IRF843 . . Vastth) Gate Threshold Voltage ALL 2.0 _ 4.0 v Vos = Ves Ip = 250pA , Sts Forward Transconductance @ ALL 49 74 - S(0)} | Vos 2 50V, Ipg = 4.44 Ipss Zero Gate Voltage Drain Currant ALL _ - 250 pA Vos = Max. Rating, Veg = OV - - 1000 Vos = 0.8 x Max. Rating Veg = OV, Ty = 126C Igsg _- Gate-to-Source Leakage Forward ALL - - 500 nA | Vag = 20V Igss Gate-to-Source Leakage Reverse ALL - - -500 | nA | Vgg = -20V Qg Total Gate Charge ALL - 42 63 ac Veg = 10V, Ip = 80A Vos = 0.8 x Max. Rating Qs Gate-to-Source Charge ALL - 6.2 9.3 ac See Fig. 16 Og Gate-to-Drain (Miller) Charge - 22 32 nc (Independent of operating temperature) tdfon) _Turn-On Delay Time Au | 4 a ns_ | Vpp = 250V, Ip = 804, Rg = 910 t Rise Time ALL - 23 3 ns Rp = 300 tdfof) Turn-Off Delay Time ALL - 49 74 ns See Fig. 15 te Fall Time ALL - 20 30 ns {Independent of operating temperature} Lp Internal Drain Inductance ALL =_ 45 - nH Measured from the drain Madified MOSFET symbol tead, 6mm (0.25 in.) from showing the internal . package to center of die. inductances. lg Internal Source Inductance ALL - 75 _ nH Measured from the source 7 lead, 6mm (0.25 in.) from package to source bonding} . pad. . Ciss Input Capacitance ALL 1300 - pF Ves = 0V Vos = 25V . . y Coss Output Capacitance ALL - 180 - pF | f = 1.0 MHz Ciss Reverse Transfer Capacitance ALL _ 45 _ pF See Fig. 10 /wale eee FOL MLE O ff 4assuse coosszo oO i ; IRF840, IRF841, IRF842, IRF843 Devices INTERNATIONAL RECTIFIER Source-Drain Diode Ratings and Characteristics Parameter Type Min. Typ. Max. | Units Test Conditions Ig Continuous Source Current ALL _ - 8.0 A Modified MOSFET symbol showing the integral (Body Diode} Reverse p-n junction rectifier. Igm Pulsed Source Current ac f - | - | 2ta (Body Diode) O Vsp _ Diode Forward Voltage AL | - 20 Vv s| Ty = 26C, Ig = 8.04, Vgg = OV tr Reverse Recovery Time ALL | 210 460 970 ns | Ty = 26C, Ip = 8.0A, ditt = 100 Als Qar Reverse Recovery Charge ALL 2.0 42 8.2 ae ton Forward Tum-On Time ALL | Intrinsic tum-on time Is negligible Tum-on speed is substantially controlled by Lg + Lp. Thermal Resistance Rinse Junction-to-Case AL | - 10 |KW Rincs Case-to-Sink ALL - 0.50 |KAV ] Mounting surface flat, smooth, and greased Rinua _ Junction-to-Ambient ALL - _ 80 |KW ] Typical socket mount Typical SPICE Computer Model Parameters (For more information See Application Note AN-975) Level, W im, L ym), Theta (1M, UO (CM2IV-S), VTO i, Rt (a, F2 (di, RG (0), Davice SPICE Channel Channel Mobility Surface Threshold Drain Source Gate MosreT | Width Length Madutation Mobility Voltage Resistanca Resistance Resistance ALL 3 0.978 12 0.20 450 4.27 0.60 0.02 05 CGSO (ph, CGD (Ff) EM, LD int, LS (nH, LG inti, IS (A), RS (0), Gate- Gate- Voltage Dependent Drain Source Gate Diode Diode Source Drain Voltage Source Indi 4 Ind Bulk Capacitance Capacitance Current Resistance 820 c11 2 + 0.995 VDG 45 75 7.6 1.3 x 1012 0.011 C11 = 3000 pf + 7 x 1022 (Vg_i48 @ Repetitive Rating; Pulse width limited by maximum junction temperature (see figure 5) Refer to current HEXFET reliability report @ Vpp = 50V, Starting Ty = 26C, = 14 mH, Rg = 269, Peak iL = 8.0A. @ tgp 5 9.0A, di/dt = 100 Alps, Voo = 8Vpss. Ty s 180C Suggested Rg = 9.10 @ Pulse width < 300 ys; Duty Cycle = 2% @ KW = CwW WK = WIC 15 102 10V Vpg 2 50V 5 12 40 Tp. DRAIN CURRENT (AMPERES) Ip. DRAIN CURRENT (AMPERES) - 6 2 0.4 3 Vgg=5 OV 5 2 4072 9% 50 0 2 4 6 8 10 50 100 150 200 2 Vpg. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vgg: GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics C-319tel eer . - + ate ae ~_= IRF840, IRF841, IRF842, IRF843 Devices TE 9 Bj sassuse cooss71 2 &f T-39-13 INTERNATIONAL RECTIFIER 45 102 5 rm bi) 10 wo Ip. DRAIN CURRENT (AMPERES} a Ip. DRAIN CURRENT (AMPERES) 3 #11 j=150C 0 0.4 (SENGLE_PULSE 0 3 6 9 42 15 . t 2 5 10 2 5 492 2 5 403 Vpg. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Vpg. DRAIN-TO-SOQURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics Fig. 4 Maximum Safe Operating Area 10 > TL ety td pao oO 1 Po NOTES: 1. DUTY FACTOR, D=t4/to 4074 4073 407@ 0.4 4 40 t4. RECTANGULAR PULSE DURATION (SECONDS) THERMAL RESPONSE (Zp jc) eS oO o Pa i 5 a Fig. 5 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration C-320LLE D i 4a5S452 O008S72e 4 i IRF840, IRF841, IRF842, IRF843 Devices T-39-13 INTERNATIONAL RECTIFIER 15 102 Vpg 2 50V TEST 12 9 T ye25C T )=150C. Seg TRANSCONDUCTANCE (SIEMENS) Ip: REVERSE DRAIN CURRENT (AMPERES) f % 3 6 9 12 15 0.0 0.3 0.6 0.9 1,2 a) Tp, DRAIN CURRENT {AMPERES} Vgp. SOURCE-TO-DAAIN VOLTAGE (VOLTS) Fig. 6 Typical Transconductance Vs. Drain Current Fig. 7 Typical Source-Drain Diode Forward Voltage 4.25 3. 1.45 1.05 a (NORMALIZED) (NORMALIZED) = 0.85 BVpsg. DRAIN-TO-SOURCE BREAKDOWN VOLTAGE Abs (on)> DRAIN-TO-SOURCE ON RESISTANCE Veg = 10V 0.75 0. -60 ~-40 -20 0 20 40 60 80 100 120 140 160 60-40 -20 0 2040 60 80 100 120 140 160 Ty, JUNCTION TEMPERATURE ( C) Ty. JUNCTION TEMPERATURE ( C) Fig. 8 Breakdown Voitage Vs. Temperature Fig 9 Normalized On-Resistance Vs. Temperature C-321whet 7 late . - aes - + 4 =~ LIE O i 4ugass4s2 00085743 & i T-39-13 IRF840, IRF841, IRF842, IRF843 Devices INTERNATIONAL RECTIFIER 3000 7 T= 20 = Cgg + Cgqe Cys SHORTED = Cgq = Cys t Cgg Cgy / (yg + Cyq) Cus * Cya Ip = 8.0A 2400 16 1800 12 1200 C, CAPACITANCE (pF) 600 Veg GATE-TO-SOURCE VOLTAGE (VOLTS) FOR TEST CIACUIT SEE FIGURE 16 2 5 10 2 5 102 % 12 24 36 48 60 Vpg- DBAIN-TO~SOUACE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Fig. 10 Typical Capacitance Vs. Drain-to-Source Voitage Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage Ww ns oO . Zz << Ee 4 a n ty) id 5 Qa S % r = bE 5 Gj a 3 TAF842, 843 ! z 5 q & fs a a = 10V : a Qo c H 2 a Veg = 20V r . 0 ) ) 8 16 24 32 40 25 50 75 100 125 450 . Tp. DRAIN CURRENT (AMPERES) Tc. CASE TEMPERATURE (C) Fig. 12 Typical On-Resistance Vs. Drain Current Fig. 13 Maximum Drain Current Vs. Case Temperature C-322wee et = 11LE D i 48SS4S2 9008574 8 i INTERNATIONAL RECTIFIER Vos VARY tp TO OBTAIN REQUIRED PEAK I, Vos Yoo Fig. 14b Unclamped Inductive Waveforms Vos OUT ~ Rg vos = | | PULSE WIDTH = 1 us OUTY FACTOR <0.1% Fig. 15a Switching Time Test Circuit GATE VOLTAGE CHARGE Fig. 16a Basic Gate Charge Waveform Yoo IRF840, IRF841, IRF842, IRF843 Devices C-323 T-39-13 I, PEAK = 8.0A Von = SOV 600 450 300 150 Eag SINGLE PULSE AVALANCHE ENERGY (mJ) 25 50 75 00 125 i STARTING Ty, JUNCTION TEMPERATURE ( C) Fig. 14c Maximum Avalanche Energy Vs. Starting Junction Temperature Ves Vos ta(atf) Fig. 15b Switching Time Waveforms o +Vps (SOLATED UPPLY) 12V BATTERY Vos Ig = Ip CURRENT CURRENT SAMPLING SAMPLING RESISTOR RESISTOR Fig. 16b Gate Charge Test CircultIRF840, IRF841, IRF842, IRF843 Devices ORIVER GATE ORIVE PW. D = FERIOD r Veg = tev Lid ~____PERI0p > PW| ld @| DUT. tgp WAVEFORM J rt o| BODY DIODE FORWARD REVERSE RECOVERY a CURRENT CURRENT dildt @ | OUT. Vpg WAVEFORM @ DIODE RECOVERY dvidt o nN) RE-APPLIEO LL VOLTAGE 7] BODY DIODE ?FORWARD DROP @ @)| INDUCTOR CURRENT ESE LIE D i wassuse oogss7s O i T-39-13 INTERNATIONAL RECTIFIER CIRCUIT LAYOUT CONSIDERATIONS +_-~ LOW STRAY INDUCTANCE * GROUND PLANE LOW LEAKAGE INDUCTANCE kt CURRENT TRANSFORMER 1% OUT J < 5 @ XC 3 f == Fig. 17 Peak Diode Recovery dv/dt Test Circuit 4012 4910 & TIME (HOURS) % S Po 70 0 110 130 180 TEMPERATURE (C) *Fig. 18 Typical Time to Accumulated 1% Gate Failure *The data shown fs correct as of April 15, 1987. This information Is updated on a quarterly basts; for the latest reliability data, please contact your local IR field office. lt - Vor 4 DRIVER dwdt CONTROLLED BY Rg ORIVER SAME DEVICE GROUP AS DUT Isp CONTROLLED BY OUTY FACTOR, D 104 1 ec 0.1 Z @ w 3 s 402 0.01 = 2 a = & QoQ 2 Z 4 0.001 0.0001 50 70 90 110 130 150 TEMPERATURE (C) *Fig. 19 Typical High Temperature Reverse Bias (HTRB) Failure Rate 1 C-324