Number: DB-009
July 2011 Releas e, Rev ision F
Page 1
TAK CHEONG ®
SEMICONDUCTOR
200mW SOD-323 SURFACE MOUNT
Small Outline Flat Lead Plastic Package
Fast Switching Diode
Absolute Ma ximum Ra ti ng s TA = 25°C unless otherwise noted
Symbol Parameter Value Units
PD Power Dissipation 200 mW
TSTG Storage Temperature Range -65 to +150 °C
TJ Operating Junction Temperature +150 °C
VRSM Non-Repetitive Peak Reverse Voltage 100 V
VRRM Repetitive Peak Reverse Voltage 75 V
IFRM Repetitive Peak Forward Current 300 mA
IO Continuous Forward Current 150 mA
IFSM Peak Forward Surge Current
(Pulse Width=1us) 2 A
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Fast Switching Device (TRR <4.0 nS)
General Purpose Diodes
Flat Lead SOD-323 Small Outline Plastic Package
Surface Device Type Mounting
RoHS Compliant
Green EMC
Matte Tin(Sn) Lead Finish
Band Indicates Cathode
DEVICE MARKING CODE:
Device Type Device Marking
1N4148WS S1
1N4448WS S2
1N914BWS S3
Electrical Characteristics TA = 25°C unless otherwise noted Limits
Symbol Parameter Test Condition
Min Max Unit
BV Breakdown Voltage IR=100µA
IR=5µA
100
75
Volts
IR Reverse Leakage Current VR=20V
VR=75V
25
5
nA
µA
VF Forward Voltage 1N4448WS, 1N914BWS
TC1N4448WS, 1N4148WS
1N4448WS, 1N914BWS
IF=5mA
IF=10mA
IF=100mA
0.62 0.72
1.0
1.0
Volts
TRR Reverse Recovery Time IF=10mA
IR=60mA
RL=100Ω
IRR=1mA
4 nS
C Capacitance VR=0V, f=1MHZ 4 pF
1N4148WS/1N4448WS/1N914BWS