Feb. 2009
RTC
RTC
CIRCUIT DIAGRAM
C2E1
E2 C1
G2E2
E1
G1
CM
G1E1 E2 G2
C2E1 C1
E2
27
24
24
94
16 16
2.5
21.2 7.5
2.5
25
7
17 23
24
114418
13
48
23 4
12 13.5
80 ±0.25 2–φ6.5
MOUNTING HOLES
3–M5NUTS
12mm deep
TAB #110. t=0.5
30
+1
–0.5
LABEL
Tc measured point
CM100DU-24F
APPLICATION
General purpose inverters & Servo controls, etc
MITSUBISHI IGBT MODULES
CM100DU-24F
HIGH POWER SWITCHING USE
¡IC ...................................................................100A
¡VCES ......................................................... 1200V
¡Insulated Type
¡2-elements in a pack
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Feb. 2009
2
VCE = VCES, VGE = 0V
±VGE = VGES, VCE = 0V
VCC = 600V, IC = 100A, VGE = 15V
VCC = 600V, IC = 100A
VGE = ±15V
RG = 3.1Ω, Inductive load
IE = 100A
IE = 100A, VGE = 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to heat sink, Thermal compound applied
*2
(1/2 module)
Case temperature measured point is just under the chips
IC = 10mA, VCE = 10V
IC = 100A, VGE = 15V
VCE = 10V
VGE = 0V
1200
±20
100
200
100
200
500
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
MITSUBISHI IGBT MODULES
CM100DU-24F
HIGH POWER SWITCHING USE
V
V
A
A
A
A
W
°C
°C
Vrms
N • m
N • m
g
1
20
2.4
—
39
1.7
1.0
—
100
50
400
300
150
—
3.2
0.25
0.35
—
0.18*3
31
mA
µA
nF
nF
nF
nC
ns
ns
ns
ns
µC
V
K/W
K/W
K/W
K/W
Ω
—
—
1.8
1.9
—
—
—
1100
—
—
—
—
—
4.1
—
—
—
0.07
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.1
6V
V
57
ns
Collector cutoff current
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
Thermal resistance
External gate resistance
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance*1
ICES
IGES
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Note 1
)
Qrr (
Note 1
)
VEC(
Note 1
)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
RG
Symbol Parameter
VGE(th)
VCE(sat)
Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
*1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using thermally conductive grease of
λ
= 0.9[W/(m • K)].
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Weight
G-E Short
C-E Short
TC = 25°C
Pulse (Note 2)
TC = 25°C
Pulse (Note 2)
TC = 25°C
Charged part to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M6 screw
Typical value
Symbol Parameter
Collector current
Emitter current
Torque strength
Conditions UnitRatings
VCES
VGES
IC
ICM
IE (
Note 1
)
IEM (
Note 1
)
PC (
Note 3
)
Tj
Tstg
Viso
—
Unit
Typ.
Limits
Min. Max.
—
Test conditions
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Tj = 25°C
Tj = 125°C
Feb. 2009
3
MITSUBISHI IGBT MODULES
CM100DU-24F
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
VGE = 20V
Tj = 25°C
15
11
10
9.5
9
8.5
8
200
100
180
160
140
120
80
60
40
20
00 0.5 1 1.5 2 2.5 3 3.5 4
3
2.5
2
1.5
0.5
1
00 120 16040 80 200
Tj = 25°C
Tj = 125°C
VGE = 15V
100
101
102
103
2
3
5
7
2
3
5
7
2
3
5
7
0.5 1 1.5 2 2.5 3 3.5
Tj = 25°C
5
4
3
2
1
02068 12 1610 14 18
IC = 200A
IC = 100A
IC = 40A
Tj = 25°C
10–1
10–1
100
2
3
5
7
101
2
3
5
7
102
2
3
5
7
2100
357 2 101
357 2 102
357
VGE=0V
Cies
Coes
Cres
101102
57 103
23 57
101
2
3
5
7
102
2
3
5
7
103
2
3
5
7
100
Conditions:
VCC = 600V
VGE = ±15V
RG = 3.1Ω
T
j
= 125
°C
Inductive load
23
td(off)
td(on)
tf
tr
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
COLLECTOR CURRENT IC (A)
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT IE (A)
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
CAPACITANCE Cies, Coes, Cres (nF)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
SWITCHING TIMES (ns)
COLLECTOR CURRENT IC (A)
Feb. 2009
4
MITSUBISHI IGBT MODULES
CM100DU-24F
HIGH POWER SWITCHING USE
10
0
10
1
23 57
10
2
23 57
10
1
10
2
2
3
5
7
10
3
2
3
5
7
trr
Irr
0
6
4
2
10
8
16
14
12
20
18
0 500 15001000
VCC = 400V
VCC = 600V
IC = 100A
10
1
10
–3
10–5 10–4
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
7
5
3
2
10–3
23 57 23 57 23 57 23 57
101
10–2 10–1 100
10–3
10
–3
7
5
3
2
10
–2
7
5
3
2
10
–1
3
2
23 57 23 57
Single Pulse
TC = 25°C
Conditions:
V
CC
= 600V
V
GE
= ±15V
R
G
= 3.1Ω
T
j
= 25
°C
Inductive load
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j–c)
TIME (s)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(V)
GATE CHARGE Q
G
(nC)
IGBT part:
Per unit base = Rth(j–c) = 0.25K/W
FWDi part:
Per unit base = Rth(j–c) = 0.35K/W
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
