BSS84V DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Product Summary Features and Benefits V(BR)DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = 25C -130mA Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Description Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it Qualified to AEC-Q101 Standards for High Reliability ideal for high efficiency power management applications. Mechanical Data Applications Case: SOT563 General Purpose Interfacing Switch Power Management Functions Analog Switch Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.006 grams (approximate) SOT563 TOP VIEW D2 G1 S1 S2 G2 D1 TOP VIEW Internal Schematic Ordering Information (Note 4) Part Number BSS84V-7 Notes: Case SOT563 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http"//www.diodes.com/products/packages.html. Marking Information K84 Date Code Key Year Code Month Code 2005 S Jan 1 BSS84V Document number: DS30605 Rev. 9 - 2 2006 T Feb 2 Mar 3 K84 = Product Type Marking Code YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September YM 2007 U Apr 4 2008 V May 5 Jun 6 1 of 5 www.diodes.com 2009 W Jul 7 2010 X Aug 8 Sep 9 2011 Y Oct O 2012 Z Nov N Dec D February 2013 (c) Diodes Incorporated BSS84V NEW PRODUCT Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Drain-Source Voltage Drain-Gate Voltage (Note 5) Gate-Source Voltage Drain Current (Note 6) Thermal Characteristics Symbol VDSS VDGR VGSS ID Continuous Continuous Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Units V V V mA Value 150 833 -55 to +150 Units mW C/W C (@TA = +25C, unless otherwise specified.) Characteristic Total Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Value -50 -50 20 -130 Symbol PD RJA Tj, TSTG (@TA = +25C, unless otherwise specified.) Symbol Min Typ Max Unit Test Condition BVDSS -75 -1 -2 -100 V A A nA 50 nA VGS = 0V, ID = -250A VDS = -50V, VGS = 0V, TJ = +25C VDS = -50V, VGS = 0V, TJ = +125C VDS = -25V, VGS = 0V, TJ = +25C VGS = 20V, VDS = 0V Zero Gate Voltage Drain Current IDSS Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time IGSS -50 VGS(th) RDS (ON) gFS -0.8 0.05 -1.6 2 -2.0 10 V S VDS = VGS, ID = -1mA VGS = -5V, ID = -0.100A VDS = -25V, ID = -0.1A Ciss Coss Crss 45 25 12 pF pF pF VDS = -25V, VGS = 0V, f = 1.0MHz tD(ON) tD(OFF) 10 18 ns ns VDD = -30V, ID = -0.27A, RGEN = 50, VGS = -10V Notes: 5. RGS 20K. 6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 7. Short duration pulse test used to minimize self-heating effect. BSS84V Document number: DS30605 Rev. 9 - 2 2 of 5 www.diodes.com February 2013 (c) Diodes Incorporated PD, POWER DISSIPATION (mW) BSS84V 250 -1.4 200 -1.2 ID, DRAIN CURRENT (A) 125 100 75 50 -1.0 -0.8 -0.6 -0.4 -0.2 25 0 0 0 -1 3.0 0 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () ID, DRAIN CURRENT (A) 175 75 25 50 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 1 Max Power Dissipation vs. Ambient Temperature VDS = -10V -0.1 -0.01 -0.001 0 -1 -2 -3 -4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 3 Typical Transfer Characteristics 2.5 2.0 1.5 1.0 0.5 -0.01 -0.1 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current -1 -1 IDR, REVERSE DRAIN CURRENT (A) 7 6 5 4 3 2 1 0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4 -4.5 -5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2 Typical Output Characteristics 0 -0.001 -5 8 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () NEW PRODUCT 150 -0.1 -0.01 -0.001 0 -4 -10 -2 -6 -8 VGS, GATE-SOURCE VOLTAGE (V) Fig. 5 Static Drain-Source On-Resistance vs. Gate-Source Voltage BSS84V Document number: DS30605 Rev. 9 - 2 3 of 5 www.diodes.com 0 -0.5 -1.5 -1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Fig. 6 Reverse Drain Current vs. Body Diode Forward Voltage February 2013 (c) Diodes Incorporated BSS84V Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. NEW PRODUCT A B SOT563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm C D G M K H L Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 1.7 C1 0.5 C2 X BSS84V Document number: DS30605 Rev. 9 - 2 4 of 5 www.diodes.com February 2013 (c) Diodes Incorporated BSS84V IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2013, Diodes Incorporated www.diodes.com BSS84V Document number: DS30605 Rev. 9 - 2 5 of 5 www.diodes.com February 2013 (c) Diodes Incorporated