Features
· Broadband performance
· Low insertion loss; 0.6dB typ at 2GHz
· Ultra low DC power consumption
· Fast switching speed; 3ns typical
· Surface mount package
· 50Ωoutput terminations
Description
The P35-4215-1T is a high performance Gallium Arsenide monolithic single pole double throw RF switch, suitable for use
in broadband communications and instrumentation applications. The isolated port of the switch is terminated in 50Ω.
Control is effected by the application of complimentary 0V and -5V levels to the control lines in accordance with the truth
table below.
The die is fabricated using MOC's 0.5µm gate length MESFET process (S20) and is fully protected using Silicon Nitride
passivation for excellent performance and reliability. It is packaged in a hermetically sealed 8-lead gullwing flatpack for
high performance and ease of mounting.
Electrical Performance
Ambient temperature = 22±3° C , ZO= 50Ω, Control voltages = 0V/-5V unless otherwise stated
Notes
1. Return Loss measured in low loss switch state
2. Input power at which insertion loss compresses by 1dB
3. Input power 10dBm/tone
GaAs MMIC SPDT Terminated
Switch, DC - 4GHz
P35-4215-1T Marconi Optical Components
Parameter Conditions Min Typ Max Units
Insertion Loss DC - 1GHz -0.4 0.8 dB
1 - 2GHz -0.6 1.1 dB
2 - 4GHz -1.4 1.8 dB
Isolation DC - 1GH 16 25 -dB
1 - 2GHz 14 20 -dB
2 - 4GHz 8 17 -dB
Input Return Loss1DC - 1GHz 20 30 -dB
1 - 2GHz 15 20 -dB
2 - 4GHz 10 15 -dB
Output Return Loss1DC - 1GHz 20 30 -dB
1 - 2GHz 15 20 -dB
2 - 4GHz 10 15 -dB
1dB power compression point20/-5V Control; 50MHz 18 20 -dBm
0/-5V Control; 4GHz 22 24 -dBm
0/-8V Control; 50MHz 30 32 -dBm
0/-8V Control; 4GHz -3-ns
Switching Speed 50% Control to 10%90%RF -3-ns
Third Order Intercept3500MHz -46 -dBm