Order Now Product Folder Support & Community Tools & Software Technical Documents LM386 SNAS545C - MAY 2004 - REVISED MAY 2017 LM386 Low Voltage Audio Power Amplifier 1 Features 3 Description * * * The LM386M-1 and LM386MX-1 are power amplifiers designed for use in low voltage consumer applications. The gain is internally set to 20 to keep external part count low, but the addition of an external resistor and capacitor between pins 1 and 8 will increase the gain to any value from 20 to 200. 1 * * * * * * Battery Operation Minimum External Parts Wide Supply Voltage Range: 4 V-12 V or 5 V-18 V Low Quiescent Current Drain: 4 mA Voltage Gains from 20 to 200 Ground-Referenced Input Self-Centering Output Quiescent Voltage Low Distortion: 0.2% (AV = 20, VS = 6 V, RL = 8 , PO = 125 mW, f = 1 kHz) Available in 8-Pin MSOP Package The inputs are ground referenced while the output automatically biases to one-half the supply voltage. The quiescent power drain is only 24 mW when operating from a 6-V supply, making the LM386M-1 and LM386MX-1 ideal for battery operation. Device Information(1) PART NUMBER PACKAGE BODY SIZE (NOM) 2 Applications LM386N-1 PDIP (8) 9.60 mm x 6.35 mm * * * * * * * * LM386N-3 PDIP (8) 9.60 mm x 6.35 mm LM386N-4 PDIP (8) 9.60 mm x 6.35 mm LM386M-1 SOIC (8) 4.90 mm x 3.90 mm LM386MX-1 SOIC (8) 4.90 mm x 3.90 mm LM386MMX-1 VSSOP (8) 3.00 mm x 3.00 mm AM-FM Radio Amplifiers Portable Tape Player Amplifiers Intercoms TV Sound Systems Line Drivers Ultrasonic Drivers Small Servo Drivers Power Converters (1) For all available packages, see the orderable addendum at the end of the data sheet. Schematic 6 VS 15 k 7 BYPASS 15 k GAIN 8 GAIN 1 15 k 5 VOUT 150 2 1.35 k 3 - INPUT + INPUT 50 k 50 k 4 GND 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. LM386 SNAS545C - MAY 2004 - REVISED MAY 2017 www.ti.com Table of Contents 1 2 3 4 5 6 7 8 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 3 6.1 6.2 6.3 6.4 6.5 6.6 3 3 4 4 4 5 Absolute Maximum Ratings ...................................... ESD Ratings ............................................................ Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Typical Characteristics .............................................. Parameter Measurement Information .................. 6 Detailed Description .............................................. 7 8.1 8.2 8.3 8.4 Overview ................................................................... Functional Block Diagram ......................................... Feature Description................................................... Device Functional Modes.......................................... 7 7 7 7 9 Application and Implementation .......................... 8 9.1 Application Information.............................................. 8 9.2 Typical Application ................................................... 8 10 Power Supply Recommendations ..................... 15 11 Layout................................................................... 16 11.1 Layout Guidelines ................................................. 16 11.2 Layout Examples................................................... 16 12 Device and Documentation Support ................. 18 12.1 12.2 12.3 12.4 12.5 12.6 12.7 12.8 Device Support...................................................... Documentation Support ....................................... Related Links ........................................................ Receiving Notification of Documentation Updates Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 18 18 18 18 18 18 18 18 13 Mechanical, Packaging, and Orderable Information ........................................................... 19 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision B (March 2017) to Revision C Page * Changed devices LM386M-1/LM386MX-1 To: LM386 in the data sheet title ........................................................................ 1 * Changed From: LM386N-4 To: Speaker Impedance in the Recommended Operating Conditions table .............................. 4 * Changed From: 5 to 12 To: 5 V to 12 V for Supply Voltage in Table 1 .......................................................................... 8 * Changed kW To: k in the Gain Control section ................................................................................................................... 8 * Changed kW To: k in the Input Biasing section................................................................................................................... 9 * Changed Figure 11................................................................................................................................................................. 9 * Changed From: 5 to 12 To: 5 V to 12 V for Supply Voltage in Table 2 ........................................................................ 10 * Changed Figure 13............................................................................................................................................................... 10 * Changed From: 5 to 12 To: 5 V to 12 V for Supply Voltage in Table 3 ........................................................................ 11 * Changed Figure 15............................................................................................................................................................... 11 * Changed From: 5 to 12 To: 5 V to 12 V for Supply Voltage in Table 4 ........................................................................ 12 * Changed Figure 17............................................................................................................................................................... 12 * Changed From: 5 to 12 To: 5 V to 12 V for Supply Voltage in Table 5 ........................................................................ 13 * Changed From: 5 to 12 To: 5 V to 12 V for Supply Voltage in Table 6 ........................................................................ 14 * Changed Figure 21............................................................................................................................................................... 14 * Changed From: 5 to 12 To: 5 V to 12 V for Supply Voltage in Table 7 ........................................................................ 15 * Changed Figure 23............................................................................................................................................................... 15 Changes from Revision A (May 2004) to Revision B Page * Added LM386MX-1 device to the data sheet. ....................................................................................................................... 1 * Added Device Information, Application and Implementation, Power Supply Recommendation, Layout, and Device and Documentation Support sections..................................................................................................................................... 1 * Inserted Functional Block Diagram......................................................................................................................................... 7 2 Submit Documentation Feedback Copyright (c) 2004-2017, Texas Instruments Incorporated Product Folder Links: LM386 LM386 www.ti.com SNAS545C - MAY 2004 - REVISED MAY 2017 5 Pin Configuration and Functions D Package 8-Pin MSOP Top View GAIN - INPUT + INPUT GND 1 8 2 7 3 6 4 5 GAIN BYPASS VS VOUT Pin Functions PIN TYPE DESCRIPTION NAME NO. GAIN 1 - Gain setting pin -INPUT 2 I Inverting input +INPUT 3 I Noninverting input GND 4 P Ground reference VOUT 5 O Output VS 6 P Power supply voltage BYPASS 7 O Bypass decoupling path GAIN 8 - Gain setting pin 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN Supply Voltage, VCC 15 LM386N-4 22 LM386N Package Dissipation MAX LM386N-1/-3, LM386M-1 UNIT V 1.25 LM386M 0.73 LM386MM-1 0.595 W Input Voltage, VI -0.4 0.4 V Storage temperature, Tstg -65 150 C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) 1000 Charged-device model (CDM), per JEDEC specification JESD22C101 (2) 1000 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Submit Documentation Feedback Copyright (c) 2004-2017, Texas Instruments Incorporated Product Folder Links: LM386 3 LM386 SNAS545C - MAY 2004 - REVISED MAY 2017 www.ti.com 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT Supply Voltage 4 12 LM386N-4 5 18 Speaker Impedance 4 VI Analog input voltage -0.4 0.4 V TA Operating free-air temperature 0 70 C VCC V V 6.4 Thermal Information THERMAL METRIC (1) LM386 LM386 LM386 D (SOIC) DGK (VSSOP) P (PDIP) 8 8 8 UNIT RJA Junction-to-ambient thermal resistance 115.7 169.3 53.4 C/W RJC(top) Junction-to-case (top) thermal resistance 59.7 73.1 42.1 C/W RJB Junction-to-board thermal resistance 56.2 100.2 30.6 C/W JT Junction-to-top characterization parameter 12.4 9.2 19.0 C/W JB Junction-to-board characterization parameter 55.6 99.1 50.5 C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.5 Electrical Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER VS Operating Supply Voltage IQ Quiescent Current POUT Output Power TEST CONDITIONS TYP MAX 4 12 LM386N-4 5 18 VS = 6 V, VIN = 0 4 VS = 6 V, RL = 8 , THD = 10% (LM386N-1, LM386M-1, LM386MM-1) 250 325 VS = 9 V, RL = 8 , THD = 10% (LM386N-3) 500 700 VS = 16 V, RL = 32 , THD = 10% (LM386N-4) 700 100 VS = 6 V, f = 1 kHz 26 10 F from Pin 1 to 8 46 AV Voltage Gain BW Bandwidth VS = 6 V, Pins 1 and 8 Open THD Total Harmonic Distortion VS = 6 V, RL = 8 , POUT = 125 mW f = 1 kHz, Pins 1 and 8 Open PSRR Power Supply Rejection Ratio VS = 6 V, f = 1 kHz, CBYPASS = 10 F Pins 1 and 8 Open, Referred to Output RIN Input Resistance IBIAS Input Bias Current 4 MIN LM386N-1, -3, LM386M-1, LM386MM-1 VS = 6 V, Pins 2 and 3 Open Submit Documentation Feedback 300 8 UNIT V mA mW dB kHz 0.2% 50 dB 50 k 250 nA Copyright (c) 2004-2017, Texas Instruments Incorporated Product Folder Links: LM386 LM386 www.ti.com SNAS545C - MAY 2004 - REVISED MAY 2017 6.6 Typical Characteristics Figure 1. Supply Current vs Supply Voltage Figure 2. Power Supply Rejection vs Frequency Figure 4. Voltage Gain vs Frequency Figure 3. Output Voltage vs Supply Voltage Figure 5. Total Harmonic Distortion vs Frequency Figure 6. Total Harmonic Distortion vs Power Out Submit Documentation Feedback Copyright (c) 2004-2017, Texas Instruments Incorporated Product Folder Links: LM386 5 LM386 SNAS545C - MAY 2004 - REVISED MAY 2017 www.ti.com Typical Characteristics (continued) Figure 7. Device Dissipation vs Output Power Figure 8. Device Dissipation vs Output Power Figure 9. Device Dissipation vs Output Power 7 Parameter Measurement Information All parameters are measured according to the conditions described in the Specifications section. 6 Submit Documentation Feedback Copyright (c) 2004-2017, Texas Instruments Incorporated Product Folder Links: LM386 LM386 www.ti.com SNAS545C - MAY 2004 - REVISED MAY 2017 8 Detailed Description 8.1 Overview The LM386 is a mono low voltage amplifier that can be used in a variety of applications. It can drive loads from 4 to 32 . The gain is internally set to 20 but it can be modified from 20 to 200 by placing a resistor and capacitor between pins 1 and 8. This device comes in three different 8-pin packages as PDIP, SOIC and VSSOP to fit in different applications. 8.2 Functional Block Diagram Gain Circuitry + Bias Circuitry Bypass 8.3 Feature Description There is an internal 1.35-K resistor that sets the gain of this device to 20. The gain can be modified from 20 to 200. Detailed information about gain setting can be found in the Detailed Design Procedure section. 8.4 Device Functional Modes As this is an Op Amp it can be used in different configurations to fit in several applications. The internal gain setting resistor allows the LM386 to be used in a very low part count system. In addition a series resistor can be placed between pins 1 and 5 to modify the gain and frequency response for specific applications. Submit Documentation Feedback Copyright (c) 2004-2017, Texas Instruments Incorporated Product Folder Links: LM386 7 LM386 SNAS545C - MAY 2004 - REVISED MAY 2017 www.ti.com 9 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI's customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 9.1 Application Information Below are shown different setups that show how the LM386 can be implemented in a variety of applications. 9.2 Typical Application 9.2.1 LM386 with Gain = 20 Figure 10 shows the minimum part count application that can be implemented using LM386. Its gain is internally set to 20. 2 6 - 1 250 F + 8 LM386 VIN 3 10 k 5 7 0.05 F + 4 10 Copyright (c) 2017, Texas Instruments Incorporated Figure 10. LM386 with Gain = 20 9.2.1.1 Design Requirements Table 1. Design Parameters DESIGN PARAMETER EXAMPLE VALUE Load Impedance 4 to 32 Supply Voltage 5 V to 12 V 9.2.1.2 Detailed Design Procedure 9.2.1.2.1 Gain Control To make the LM386 a more versatile amplifier, two pins (1 and 8) are provided for gain control. With pins 1 and 8 open the 1.35-k resistor sets the gain at 20 (26 dB). If a capacitor is put from pin 1 to 8, bypassing the 1.35-k resistor, the gain will go up to 200 (46 dB). If a resistor is placed in series with the capacitor, the gain can be set to any value from 20 to 200. Gain control can also be done by capacitively coupling a resistor (or FET) from pin 1 to ground. Additional external components can be placed in parallel with the internal feedback resistors to tailor the gain and frequency response for individual applications. For example, we can compensate poor speaker bass response by frequency shaping the feedback path. This is done with a series RC from pin 1 to 5 (paralleling the internal 15-k resistor). For 6 dB effective bass boost: R ~= 15 k, the lowest value for good stable operation is R = 10 k if pin 8 is open. If pins 1 and 8 are bypassed then R as low as 2 k can be used. This restriction is because the amplifier is only compensated for closed-loop gains greater than 9. 8 Submit Documentation Feedback Copyright (c) 2004-2017, Texas Instruments Incorporated Product Folder Links: LM386 LM386 www.ti.com SNAS545C - MAY 2004 - REVISED MAY 2017 9.2.1.2.2 Input Biasing The schematic shows that both inputs are biased to ground with a 50 k resistor. The base current of the input transistors is about 250 nA, so the inputs are at about 12.5 mV when left open. If the dc source resistance driving the LM386 is higher than 250 k it will contribute very little additional offset (about 2.5 mV at the input, 50 mV at the output). If the dc source resistance is less than 10 k, then shorting the unused input to ground will keep the offset low (about 2.5 mV at the input, 50 mV at the output). For dc source resistances between these values we can eliminate excess offset by putting a resistor from the unused input to ground, equal in value to the dc source resistance. Of course all offset problems are eliminated if the input is capacitively coupled. When using the LM386 with higher gains (bypassing the 1.35 k resistor between pins 1 and 8) it is necessary to bypass the unused input, preventing degradation of gain and possible instabilities. This is done with a 0.1 F capacitor or a short to ground depending on the dc source resistance on the driven input. 9.2.1.3 Application Curve Figure 11. Supply Current vs Supply Voltage Submit Documentation Feedback Copyright (c) 2004-2017, Texas Instruments Incorporated Product Folder Links: LM386 9 LM386 SNAS545C - MAY 2004 - REVISED MAY 2017 www.ti.com 9.2.2 LM386 with Gain = 200 VS 2 10 F + 6 - 1 250 F + 8 LM386 VIN 3 10 k 5 7 0.05 F + 4 BYPASS 10 Copyright (c) 2017, Texas Instruments Incorporated Figure 12. LM386 with Gain = 200 9.2.2.1 Design Requirements Table 2. Design Parameters DESIGN PARAMETER EXAMPLE VALUE Load Impedance 4 to 32 Supply Voltage 5 V to 12 V 9.2.2.2 Detailed Design Procedure The Detailed Design Procedure can be found in the Detailed Design Procedure section. 9.2.2.3 Application Curve Figure 13. Supply Current vs Supply Voltage 10 Submit Documentation Feedback Copyright (c) 2004-2017, Texas Instruments Incorporated Product Folder Links: LM386 LM386 www.ti.com SNAS545C - MAY 2004 - REVISED MAY 2017 9.2.3 LM386 with Gain = 50 VS 2 1.2 k 6 - 10 F 1 250 F + 8 LM386 VIN 3 10 k 5 7 + 4 10 BYPASS 0.05 F Copyright (c) 2017, Texas Instruments Incorporated Figure 14. LM386 with Gain = 50 9.2.3.1 Design Requirements Table 3. Design Parameters DESIGN PARAMETER EXAMPLE VALUE Load Impedance 4 to 32 Supply Voltage 5 V to 12 V 9.2.3.2 Detailed Design Procedure The Detailed Design Procedure can be found in the Detailed Design Procedure section. 9.2.3.3 Application Curve Figure 15. Supply Current vs Supply Voltage Submit Documentation Feedback Copyright (c) 2004-2017, Texas Instruments Incorporated Product Folder Links: LM386 11 LM386 SNAS545C - MAY 2004 - REVISED MAY 2017 www.ti.com 9.2.4 Low Distortion Power Wienbridge Oscillator 390 10 F + VS 2 6 - 1 50 F + 8 ELDEMA CF-S-2158 LM386 3 3 V 15mA 4 + VO 5 7 0.01 F BYPASS RL 0.05 F 10 47 k f = 1 kHz 0.01 F 4.7 k Copyright (c) 2017, Texas Instruments Incorporated Figure 16. Low Distortion Power Wienbridge Oscillator 9.2.4.1 Design Requirements Table 4. Design Parameters DESIGN PARAMETER EXAMPLE VALUE Load Impedance 4 to 32 Supply Voltage 5 V to 12 V 9.2.4.2 Detailed Design Procedure The Detailed Design Procedure can be found in the Detailed Design Procedure section. 9.2.4.3 Application Curve Figure 17. Supply Current vs Supply Voltage 12 Submit Documentation Feedback Copyright (c) 2004-2017, Texas Instruments Incorporated Product Folder Links: LM386 LM386 www.ti.com SNAS545C - MAY 2004 - REVISED MAY 2017 9.2.5 LM386 with Bass Boost VS 2 6 - BYPASS 7 250 F + LM386 VIN 1 3 10 k 8 + 4 VO 5 RL 0.033 F 0.05 F 10 k 10 Y Copyright (c) 2017, Texas Instruments Incorporated Figure 18. LM386 with Bass Boost 9.2.5.1 Design Requirements Table 5. Design Parameters DESIGN PARAMETER EXAMPLE VALUE Load Impedance 4 to 32 Supply Voltage 5 V to 12 V 9.2.5.2 Detailed Design Procedure The Detailed Design Procedure can be found in the Detailed Design Procedure section. 9.2.5.3 Application Curve Figure 19. Voltage Gain vs Frequency Submit Documentation Feedback Copyright (c) 2004-2017, Texas Instruments Incorporated Product Folder Links: LM386 13 LM386 SNAS545C - MAY 2004 - REVISED MAY 2017 www.ti.com 9.2.6 Square Wave Oscillator VS 2 6 - 30 k 1 0.1 F 8 LM386 3 + 50 F + 5 VO RL 4 10 k 1k f = 1 kHz Copyright (c) 2017, Texas Instruments Incorporated Figure 20. Square Wave Oscillator Table 6. Design Parameters DESIGN PARAMETER EXAMPLE VALUE Load Impedance 4 to 32 Supply Voltage 5 V to 12 V 9.2.6.1 Detailed Design Procedure The Detailed Design Procedure can be found in the Detailed Design Procedure section. 9.2.6.2 Application Curve Figure 21. Supply Current vs Supply Voltage 14 Submit Documentation Feedback Copyright (c) 2004-2017, Texas Instruments Incorporated Product Folder Links: LM386 LM386 www.ti.com SNAS545C - MAY 2004 - REVISED MAY 2017 9.2.7 AM Radio Power Amplifier VS CC FROM DETECTOR VOL 10 k 0.05 F R1 10 k 10 F 2 6 - + BYPASS 1 C1 2200 pF LM386 8 5 FERRITE BEAD 250 F + 7 3 + + 4 10 F + 47 8Y SPEAKER 0.05 F Copyright (c) 2017, Texas Instruments Incorporated Figure 22. AM Radio Power Amplifier 9.2.7.1 Design Requirements Table 7. Design Parameters DESIGN PARAMETER EXAMPLE VALUE Load Impedance 4 to 32 Supply Voltage 5 V to 12 V 9.2.7.2 Detailed Design Procedure The Detailed Design Procedure can be found in the Detailed Design Procedure section. 9.2.7.3 Application Curve Figure 23. Supply Current vs Supply Voltage 10 Power Supply Recommendations The LM386 is specified for operation up to 12 V or 18 V. The power supply should be well regulated and the voltage must be within the specified values. It is recommended to place a capacitor to GND close to the LM386 power supply pin. Submit Documentation Feedback Copyright (c) 2004-2017, Texas Instruments Incorporated Product Folder Links: LM386 15 LM386 SNAS545C - MAY 2004 - REVISED MAY 2017 www.ti.com 11 Layout 11.1 Layout Guidelines Place all required components as close as possible to the device. Use short traces for the output to the speaker connection. Route the analog traces far from the digital signal traces and avoid crossing them. 11.2 Layout Examples 250uF OUTPUT 0.05uF LM386 10 INPUT Connection to ground plane Connection to power 5V Top layer traces Top layer ground plane Figure 24. Layout Example for Minimum Parts Gain = 20 dB on PDIP package 250uF OUTPUT 0.05uF LM386 10 INPUT Connection to ground plane Connection to power 5V Top layer traces Top layer ground plane Figure 25. Layout Example for Minimum Parts Gain = 20 dB on SOIC package 16 Submit Documentation Feedback Copyright (c) 2004-2017, Texas Instruments Incorporated Product Folder Links: LM386 LM386 www.ti.com SNAS545C - MAY 2004 - REVISED MAY 2017 Layout Examples (continued) 250uF OUTPUT 0.05uF LM386 10 INPUT Connection to ground plane Connection to power 5V Top layer traces Top layer ground plane Figure 26. Layout Example for Minimum Parts Gain = 20 dB on VSSOP package Submit Documentation Feedback Copyright (c) 2004-2017, Texas Instruments Incorporated Product Folder Links: LM386 17 LM386 SNAS545C - MAY 2004 - REVISED MAY 2017 www.ti.com 12 Device and Documentation Support 12.1 Device Support 12.1.1 Development Support 12.2 Documentation Support 12.3 Related Links The table below lists quick access links. Categories include technical documents, support and community resources, tools and software, and quick access to order now. Table 8. Related Links PARTS PRODUCT FOLDER ORDER NOW TECHNICAL DOCUMENTS TOOLS & SOFTWARE SUPPORT & COMMUNITY LM386M-1 Click here Click here Click here Click here Click here LM386MX-1 Click here Click here Click here Click here Click here 12.4 Receiving Notification of Documentation Updates To receive notification of documentation updates -- go to the product folder for your device on ti.com. In the upper right-hand corner, click the Alert me button to register and receive a weekly digest of product information that has changed (if any). For change details, check the revision history of any revised document. 12.5 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2ETM Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 12.6 Trademarks E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 12.7 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 12.8 Glossary SLYZ022 -- TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 18 Submit Documentation Feedback Copyright (c) 2004-2017, Texas Instruments Incorporated Product Folder Links: LM386 LM386 www.ti.com SNAS545C - MAY 2004 - REVISED MAY 2017 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Documentation Feedback Copyright (c) 2004-2017, Texas Instruments Incorporated Product Folder Links: LM386 19 PACKAGE OPTION ADDENDUM www.ti.com 21-Nov-2017 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (C) Device Marking (4/5) LM386M-1 LIFEBUY SOIC D 8 95 TBD Call TI Call TI 0 to 70 LM386 M-1 LM386M-1/NOPB ACTIVE SOIC D 8 95 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 LM386 M-1 LM386MMX-1/NOPB ACTIVE VSSOP DGK 8 3500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 Z86 LM386MX-1/NOPB ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 LM386 M-1 LM386N-1/NOPB ACTIVE PDIP P 8 40 Green (RoHS & no Sb/Br) CU SN | Call TI Level-1-NA-UNLIM 0 to 70 LM 386N-1 LM386N-3/NOPB ACTIVE PDIP P 8 40 Green (RoHS & no Sb/Br) CU SN Level-1-NA-UNLIM 0 to 70 LM 386N-3 LM386N-4/NOPB ACTIVE PDIP P 8 40 Green (RoHS & no Sb/Br) CU SN | Call TI Level-1-NA-UNLIM 0 to 70 LM 386N-4 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement. (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 21-Nov-2017 (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. 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Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 26-May-2017 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant LM386MMX-1/NOPB VSSOP DGK 8 3500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 LM386MX-1/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 26-May-2017 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM386MMX-1/NOPB VSSOP DGK 8 3500 367.0 367.0 35.0 LM386MX-1/NOPB SOIC D 8 2500 367.0 367.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated (TI) reserves the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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TI has not conducted any testing other than that specifically described in the published documentation for a particular TI Resource. Designer is authorized to use, copy and modify any individual TI Resource only in connection with the development of applications that include the TI product(s) identified in such TI Resource. NO OTHER LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE TO ANY OTHER TI INTELLECTUAL PROPERTY RIGHT, AND NO LICENSE TO ANY TECHNOLOGY OR INTELLECTUAL PROPERTY RIGHT OF TI OR ANY THIRD PARTY IS GRANTED HEREIN, including but not limited to any patent right, copyright, mask work right, or other intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information regarding or referencing third-party products or services does not constitute a license to use such products or services, or a warranty or endorsement thereof. Use of TI Resources may require a license from a third party under the patents or other intellectual property of the third party, or a license from TI under the patents or other intellectual property of TI. TI RESOURCES ARE PROVIDED "AS IS" AND WITH ALL FAULTS. TI DISCLAIMS ALL OTHER WARRANTIES OR REPRESENTATIONS, EXPRESS OR IMPLIED, REGARDING RESOURCES OR USE THEREOF, INCLUDING BUT NOT LIMITED TO ACCURACY OR COMPLETENESS, TITLE, ANY EPIDEMIC FAILURE WARRANTY AND ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, AND NON-INFRINGEMENT OF ANY THIRD PARTY INTELLECTUAL PROPERTY RIGHTS. TI SHALL NOT BE LIABLE FOR AND SHALL NOT DEFEND OR INDEMNIFY DESIGNER AGAINST ANY CLAIM, INCLUDING BUT NOT LIMITED TO ANY INFRINGEMENT CLAIM THAT RELATES TO OR IS BASED ON ANY COMBINATION OF PRODUCTS EVEN IF DESCRIBED IN TI RESOURCES OR OTHERWISE. IN NO EVENT SHALL TI BE LIABLE FOR ANY ACTUAL, DIRECT, SPECIAL, COLLATERAL, INDIRECT, PUNITIVE, INCIDENTAL, CONSEQUENTIAL OR EXEMPLARY DAMAGES IN CONNECTION WITH OR ARISING OUT OF TI RESOURCES OR USE THEREOF, AND REGARDLESS OF WHETHER TI HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES. Unless TI has explicitly designated an individual product as meeting the requirements of a particular industry standard (e.g., ISO/TS 16949 and ISO 26262), TI is not responsible for any failure to meet such industry standard requirements. Where TI specifically promotes products as facilitating functional safety or as compliant with industry functional safety standards, such products are intended to help enable customers to design and create their own applications that meet applicable functional safety standards and requirements. Using products in an application does not by itself establish any safety features in the application. Designers must ensure compliance with safety-related requirements and standards applicable to their applications. Designer may not use any TI products in life-critical medical equipment unless authorized officers of the parties have executed a special contract specifically governing such use. Life-critical medical equipment is medical equipment where failure of such equipment would cause serious bodily injury or death (e.g., life support, pacemakers, defibrillators, heart pumps, neurostimulators, and implantables). Such equipment includes, without limitation, all medical devices identified by the U.S. Food and Drug Administration as Class III devices and equivalent classifications outside the U.S. TI may expressly designate certain products as completing a particular qualification (e.g., Q100, Military Grade, or Enhanced Product). Designers agree that it has the necessary expertise to select the product with the appropriate qualification designation for their applications and that proper product selection is at Designers' own risk. Designers are solely responsible for compliance with all legal and regulatory requirements in connection with such selection. Designer will fully indemnify TI and its representatives against any damages, costs, losses, and/or liabilities arising out of Designer's noncompliance with the terms and provisions of this Notice. Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265 Copyright (c) 2017, Texas Instruments Incorporated Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Texas Instruments: LM386M-1 LM386M-1/NOPB LM386MMX-1 LM386MMX-1/NOPB LM386MX-1 LM386MX-1/NOPB LM386N1/NOPB LM386N-3/NOPB LM386N-4/NOPB