DMS3016SSSA
Document number: DS35073 Rev. 1 - 2 1 of 6
www.diodes.com October 2010
© Diodes Incorporated
DMS3016SSS
A
N-CHANNEL ENHAN CEMENT MODE MOSFET WITH SCHOTT KY DIODE
Features
• DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
• Low RDS(ON) - minimizes conduction losses
• Ultra Low VSD – enhanced to reduce losses due to body
diode conduction
• Low Qrr - lower Qrr of the integrated Schottky reduces body
diode switching losses
• Low gate capacitance (Qg/Qgs) ratio – reduces risk of shoot-
through or cross conduction currents at high frequencies
• Avalanche rugged – IAR and EAR rated
• Lead Free, RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Weight: 0.072 grams (approximate)
Ordering Information (Note 3)
Part Number Case Packaging
DMS3016SSSA-13 SO-8 2500 / Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Top View Top View
Internal Schematic
S
D
D
G
D
D
S
S
Logo
Part no.
Year: “09” = 2009
Xth w eek: 01 ~ 53
1 4
8 5
S3016SA
YY WW
Year: “10” = 2010
DMS3016SSSA
Document number: DS35073 Rev. 1 - 2 2 of 6
www.diodes.com October 2010
© Diodes Incorporated
DMS3016SSS
A
Maximum Ratings @TA = 25°C unl ess otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS ±12 V
Continuous Drain Current (Note 4) VGS = 4.5V Steady
State TA = 25°C
TA = 85°C ID 9.8
6.3 A
Pulsed Drain Current (Note 5) IDM 90 A
Avalanche Current (Note 5) (Note 6) IAR 13 A
Repetitive Avalanche Energy (Note 5) (Note 6) L = 0.3mH EAR 25.4 mJ
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) PD 1.54 W
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) RθJA 81 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @ TA = 25°C unless otherwise stated
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS 30 - - V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current IDSS - - 1.0 mA
VDS = 30V, VGS = 0V
Gate-Source Leakage IGSS - - ±100 nA
VGS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS
(
th
)
1.0 - 2.3 V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance RDS (ON) - 9 13
mΩ VGS = 10V, ID = 9.8A
- 11 16 VGS = 4.5V, ID = 9.8A
Forward Transfer Admittance |Yfs| - 11 - S
VDS = 5V, ID = 9.8A
Diode Forward Voltage VSD - 0.35 0.6 V
VGS = 0V, IS = 1A
Maximum Body-Diode + Schottky Continuous Current IS - - 5 A -
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss - 1849 - pF
VDS =15V, VGS = 0V,
f = 1.0MHz
Output Capacitance Coss - 158 - pF
Reverse Transfer Capacitance Crss - 123 - pF
Gate Resistance R
g
0.53 2.68 4.82 Ω VDS =0V, VGS = 0V, f = 1MHz
Total Gate Charge VGS = 4.5V Q
g
- 18.5 - nC
VDS = 15V, VGS = 10V,
ID = 9.8A
Total Gate Charge VGS = 10V Q
g
- 43 - nC
Gate-Source Charge Q
g
s - 4.7 - nC
Gate-Drain Charge Q
g
d - 4.0 - nC
Turn-On Delay Time tD
(
on
)
- 6.62 - ns
VGS = 10V, VDS = 10V,
RG = 3Ω, RL = 1.2Ω
Turn-On Rise Time t
r
- 8.73 - ns
Turn-Off Delay Time tD
(
off
)
- 36.41 - ns
Turn-Off Fall Time tf - 4.69 - ns
Notes: 4. Device mounted on minimum recommended layout. The value in any given application depends on the user’s specific board design.
5. Repetitive rating, pulse width limited by junction temperature.
6. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMS3016SSSA
Document number: DS35073 Rev. 1 - 2 3 of 6
www.diodes.com October 2010
© Diodes Incorporated
DMS3016SSS
A
0 0.5 1 1.5 2
F ig . 1 Typi cal Output C har act er i stic
V , DRAIN-SOURCE VOL TAGE (V)
DS
0
10
15
20
25
30
I, D
R
AIN
C
U
R
R
EN
T
(A )
D
5
V = 2.0V
GS
V = 2.2V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 3.5V
GS
V = 4.5V
GS
V = 4.0V
GS
Fig. 2 T ypical Transfer Characteristic
V , GA T E-SOURCE VOLTAGE (V)
GS
0 1 1.5 2 2.5 30.5
0
5
10
15
20
25
30
I, D
AIN
EN
(A)
D
V = 85°C
GS
V = 125°C
GS
V = 25°C
GS
V = -55°C
GS
V = 150°C
GS
V = 5V
DS
0102015 25 30
Fig. 3 Typical On-Resistance
vs . D r ai n Cu rrent and G at e Voltage
I , DRAIN-SOURCE CURRENT (A)
D
5
0.05
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
0
0.04
0.01
0.02
0.03
V = 2.5V
GS
V = 4.5V
GS
V = 10V
GS
0 5 10 15 20 25 30
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs . Dr ai n Cu rrent and Temper at ur e
0
0.01
0.02
0.04
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
0.03
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 150°C
A
V = 4.5V
GS
T = 125°C
A
Fig. 5 On - Res istance Va r iation w ith Te m perature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERA TURE (°C)
A
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALI ZED)
DSON
0.6
0.8
1.0
1.2
1.4
1.6
V = 4.5V
I = 10A
GS
D
V = 10V
I = 20A
GS
D
Fig. 6 On-Resistance V ariation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERA T URE (°C)
A
0
0.01
0.03
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DSON
Ω
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DSON
Ω
0.02
V = 4.5V
I = 10A
GS
D
V = 10V
I = 20A
GS
D
DMS3016SSSA
Document number: DS35073 Rev. 1 - 2 4 of 6
www.diodes.com October 2010
© Diodes Incorporated
DMS3016SSS
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Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.5
1.0
1.5
2.0
2.5
3.0
V,
A
E
ES
LD V
L
A
E (V)
GS(TH)
I = 1 00mA
D
0
4
8
12
16
20
0 0.4 0.6 0.8 1.0 1.2
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLT AGE (V)
SD
0.2
I, S
E
E
(A )
S
T = 25°C
A
0 5 10 15 20 25 30
Fig. 9 Typical Total Capacitance
V , DRAIN-SOURCE VOLT AGE (V)
DS
10
1,000
10,000
,
A
A
I
A
E (p
)
100
C
iss
C
rss
C
oss
f = 1MHz
0102030
Fig. 10 T ypical Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
10,000
I, LEAKA
E
E
(µA)
DSS
T = 25°C
A
T = 85°C
A
T = 125°C
A
0 5 10 15 20 25 30 35 40 45
Fi g. 11 G at e -Char ge Char ac t er istics
Q , T OTAL GATE CHARGE (nC)
g
0
2
4
6
8
10
V,
A
E-S
E V
L
A
E (V)
GS
V = 15V
I = 12.7A
DS
D
DMS3016SSSA
Document number: DS35073 Rev. 1 - 2 5 of 6
www.diodes.com October 2010
© Diodes Incorporated
DMS3016SSS
A
0.001 0.01 0.1 1 10 100
Fig. 12 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.0001 1,000
0.001
0.01
0.1
1
r(t),
ANSIEN
E
MAL
ESIS
AN
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
θ
R (t) = r(t) *
θ
JA
R
R = 80°C/W
θ
θ
JA
JA
P(pk) t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5
Package Outline Dimensions
Suggested Pad Layout
SO-8
Dim Min Max
A - 1.75
A1 0.10 0.20
A2 1.30 1.50
A3 0.15 0.25
b 0.3 0.5
D 4.85 4.95
E 5.90 6.10
E1 3.85 3.95
e 1.27 Typ
h - 0.35
L 0.62 0.82
θ 0° 8°
All Dimensions in mm
Dimensions Value (in mm)
X 0.60
Y 1.55
C1 5.4
C2 1.27
Gauge Plane
Seating Plane
Det ail ‘A’
Det ail ‘A’
E
E1
h
L
D
eb
A2
A1
A
45
°
7
°~
9
°
A3
0.254
X
C1
C2
Y
DMS3016SSSA
Document number: DS35073 Rev. 1 - 2 6 of 6
www.diodes.com October 2010
© Diodes Incorporated
DMS3016SSS
A
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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