92612 TKIM/D1003TN (KT)/92098HA (KT)/4107KI/0296AT, TS No.2158-1/7
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
September, 2013
2SD1835
Bipolar Transistor
50V, 2A, Low VCE(sat), NPN Single NP
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Applications
• Voltage regulators, relay drivers, lamp drivers, electrical equipment
Features
• Adoption of FBET, MBIT processes • Large current capacity
• Low collector-to-emitter saturation voltage • Fast switching time
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 60 V
Collector-to-Emitter Voltage VCEO 50 V
Emitter-to-Base Voltage VEBO 6V
Collector Current IC2A
Collector Current (Pulse) ICP 3A
Collector Dissipation PC0.75 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Package Dimensions
unit : mm (typ)
7522-002
Ordering number : EN2158B
123
5.0
4.0 4.0
0.45
0.45 0.44
0.5
1.3
1.3
5.0
0.6
2.0
14.0
1 : Emitter
2 : Collecto
r
3 : Base
NP
2SD1835S
2SD1835T
2SD1835S-AA
2SD1835T-AA
Product & Package Information
• Package : NP
• JEITA, JEDEC : SC-34A, TO-92, TO-226AA, SOT-54
• Minimum Packing Quantity : 1,500 pcs./box, 500pcs./bag
Marking Electrical Connection
D1835
LOT No.
RANK
2
1
3
2SD1835
No.2158-2/7
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Collector Cutoff Current ICBO VCB=50V, IE=0A 100 nA
Emitter Cutoff Current IEBO VEB=4V, IC=0A 100 nA
DC Current Gain hFE1V
CE=2V, IC=100mA 100* 560*
hFE2V
CE=2V, IC=1.5A 40
Gain-Bandwidth Product fTVCE=10V, IC=50mA 150 MHz
Output Capacitance Cob VCB=10V, f=1MHz 12 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=1A, IB=50mA 0.15 0.4 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=1A, IB=50mA 0.9 1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=10μA, IE=0A 60 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0A 6 V
Turn-ON Time ton See specifi ed Test Circuit. 60 ns
Storage Time tstg 550 ns
Fall Time tf30 ns
* : The 2SD1835 is classifi ed by 100mA hFE as follows :
Rank R S T U
hFE 100 to 200 140 to 280 200 to 400 280 to 560
Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
2SD1835S NP 500pcs./bag
Pb Free
2SD1835T NP 500pcs./bag
2SD1835S-AA NP 1,500pcs./box
2SD1835T-AA NP 1,500pcs./box
VRRB
VCC
VBE= --5V
++
50Ω
INPUT
OUTPU
T
RL
100μF 470μF
IB1
IB2
IC=10IB1= --10IB2=500mA, VCC=25V
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
IC -- VCE
ITR09361
0 0.4 0.8 1.2 1.6 2.0 2.4
0
0.4
0.8
1.2
1.6
2.0
2.4
IB=0mA
50mA
25mA
40mA
15mA
8mA
ITR09363
042861210
0
200
400
600
800
1000
1200
IB=0mA
7mA
5mA
4mA
3mA
2mA
1mA
6mA
4mA
2mA
2SD1835
No.2158-3/7
Ambient Temperature, Ta -- °C
PC -- Ta
Collector Dissipation, PC -- mW
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
IC -- VBE
Collector-to-Base Voltage, VCB -- V
Cob -- VCB
Output Capacitance, Cob -- pF DC Current Gain, hFE
Collector Current, IC -- A
hFE -- IC
fT -- IC
Gain-Bandwidth Product, fT -- MHz
Collector Current, IC -- mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector Current, IC -- A
VCE(sat) -- IC
Collector-to-Emitter Voltage, VCE -- V
A S O
Collector Current, IC -- A
VBE(sat) -- IC
Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
ITR09367
0.01 323 5 0.1 1.0
5777232
7
100
1000
5
3
2
7
5
3
2
VCE=2V
VCE=10V
1.0 10 223 357 100
57
10
7
100
5
7
5
3
2
ITR09371
ITR09365
0 0.2 0.4 0.6 0.8 1.0 1.2
0
0.4
0.8
1.2
1.6
2.0
2.4 VCE=2V
Ta=75
°
C
25°C
--25
°
C
f=1MHz
3
10 7100
5237
1000
5232
7
100
5
2
10
2
3
7
1000
5
3
ITR09369
Ta=75°C
25
°
C
--25°C
ITR09373
50.1 2
0.01 2335777 1.0 23
100
1000
5
3
5
3
3
5
7
7
2
10
2
2
IC / IB=20
Ta=75
°
C
25
°
C
--25
°
C
ITR09375
577 7
0.1 2
0.01 23 5 1.0
323
1.0
5
7
7
3
2
10
5
3
IC / IB=20
Ta= --25
°
C
25
°
C
75
°
C
0 20 40 60 80 100 120 140 160
0
200
400
800
750
1000
600
ITR09377
ITR09376
1.0
3
5
5
5
7
7
7
2
2
3
22
33 55777 3
510 100
0.1
5
3
2
1.0
0.01
10ms
1ms
ICP=3A
IC=2A
DC operation
100ms
Ta=25°C
Single pulse
2SD1835
No.2158-4/7
Taping Specifi cation
2SD1835S-AA, 2SD1835T-AA
2SD1835
No.2158-5/7
2SD1835
No.2158-6/7
Outline Drawing
2SD1835S, 2SD1835T
Mass (g) Unit
0.269
* For reference
mm
Bag Packing Specifi cation
2SD1835S, 2SD1835T
2SD1835
PS No.2158-7/7
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