IINMERSIL 2N5902-2N5909 Dual Monolithic N-Channel JFET PIN CHIP / CONFIGURATION TOPOGRAPHY FEATURES TO-99 6015 Tracking<Suvrc 'g<tPa GATES ARE @ Matched Vgs-4 Vgs/4T. Ops & Goss Fut SUBSTRATE ABSOLUTE MAXIMUM RATINGS @ 25C (unless otherwise noted) Gate-Drain or Gate-Source Voltage -40V Gate Current 10 mA b : soe ae . mn 8,{] P2 || Ge Device Dissipation (Each Side}, Ta 250 c a : (Derate 3 mW/C) 367 mw 1 Total Device Dissipation, T , = 25C (Derate 4 mw/C) 500 mW ORDERING INFORMATION Storage Temperature Range -5C to +150C TO-99| WAFER | DICE To-99 | WAFER | DICE 2N5906/D 2N5903/D 2N5907 2N5907/D ELECTRICAL CHARACTERISTICS (25C uniess otherwise noted) 2N5902-5 2N5906-9 PARAMETER MIN MAX | MIN MAX UNIT TEST CONDITIONS | Gate Reverse Current <8 -2 pA VGs = -20 V, Vps = 0 GSS verse beurre ~i0 | -5 | nA GS 1 YDS 128C 6VGssS Gate-Source Breakdown Voltage -40 -40 Ig = -1 uA, Vps = 0 VGS(oft) Gate-Source Cutoff Voltage 0.6 .-45 0.6 -4.5 Vv Vosz=tOV,Ip=1nA . VGsS Gate Source Voltage ~4 ~4 " 73 1 | pA . . ig Gate Operating Current 3 41 nA Vp = 10 V, Ip = 30 pA [rastc loss Saturation Drain Current 30 500 30 500 uA Sts Tommon Bource Forward 70 250 70 250 ransconductance mho t=1kHz Gos Common-Source Output Conductance 5 5 |? Vos = 10 V, VGs=9 Cigs Common-Source Input Capacitance 3 3 pF f=1MHz c Common-Source Reverse Transfer 15 15 rss Capacitance . Sts common Source Forward 50 150 50 150 ransconductance mho | Vv =10V.1p=30uA Qos Common-Source Output Conductance 1 4 a 0G up f=1kHz = Equivalent Short Circuit Input 02 0.1 HV . nN . . Noise Voitage Vz Vos = 10 V, Veg =0 wom NF Spot Noise Figure 3 1 dB Rg=10M 2N5902-6 2N5903-7 2N5904-8 2N5905-9 PARAMETER MIN MAX |MIN| MAX | MIN MAX | MIN MAX UNIT TEST CONDITIONS llerl Differentiat Gate C 20 2.0 20 20 | on Voge tov 2N5902-5 G1-1G2] ifferential Gate Current 02 02 02 02 Do ua TSN5g06-9 Ta = 125C 'pss1 . . . , . ibss2 Saturation Drain Current Ratio 0.95. 1 0.95 1 0.95 1 0.95 1 _ Vos = 10V, VGgsgz0 ast Transconductance Ratio 097 1 |097 1 |o95 1 |o9s 1 f=1kHz 9fs2 IVgsi-VGs2| _ Differential Gate-Source Voltage 5 5 10 15 mV jl VpG=10V,/TA=26C Gate-Source Voltage Differential 5 10 20 40 Vv. - = = Svasi-vasal Drift (Measured at end points wvirc p= 30HA [TB = 126 c TA and Tg) 5 10 20 40 Tp = 28C I90s1-Gos2! Differential Output Conductance 0.2 0.2 0.2 0.2 pmho f= 1kHz 1-89