Philips Semiconductors Three quadrant triacs guaranteed commutation Objective specification BTA208X series D, E and F GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL | PARAMETER MAX. | MAX. | MAX. | UNIT triacs in a plastic envelope suitable for surface mounting, intended for use in BTA208X- | 500D | 600D - motor control circuits or with other BTA208X- | 500E | 600E | 800E highly inductive loads. These devices BTA208X- | 500F | 600F | 800F balance the requirements of Vorm Repetitive peak off-state 500 | 600 | 800 Vv commutation performance and gate voltages sensitivity. The sensitive gate E lems) RMS on-state current 8 8 8 A series and logic level" D series are Tem Non-repetitive peak on-state} 65 65 65 A intended for interfacing with low power current drivers, including micro controllers. PINNING - SOT186A PIN CONFIGURATION SYMBOL PIN DESCRIPTION O { main terminal 4 T2 T1 2 | main terminal 2 3 | gate case |isolated G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL |PARAMETER CONDITIONS MIN. MAX. UNIT -500 -600 -800 Von Repetitive peak off-state - 500" 600' 800 Vv voltages hams) RMS on-state current full sine wave; - 8 A Ths $73 C lrsm Non-repetitive peak full sine wave; on-state current T; = 25 C prior to surge t= 20 ms - 65 A t= 16.7 ms - 71 A Pt Pt for fusing t= 10ms - 21 As di,/dt Repetitive rate of rise of hy = 12 A; |, = 0.2 A; 100 A/us on-state current after di,/dt = 0.2 A/us triggering Jon Peak gate current - 2 A Vem Peak gate voltage - 5 Vv Pou Peak gate power - 5 Ww Pasay Average gate power over any 20 ms - 0.5 Ww period Tag Storage temperature -40 150 C T, Operating junction - 125 C temperature Objective specification See Philips Semiconductors for Design-in information 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/us. September 1997 482 Rev 1.000Philips Semiconductors Objective specification Three quadrant triacs guaranteed commutation BTA208X series D, E and F THERMAL RESISTANCES SYMBOL. | PARAMETER CONDITIONS MIN. | TYP. |. MAX. | UNIT Rin hs Thermal resistance full or half cycle junction to heatsink with heatsink compound - - 4.5 | KW without heatsink compound - - 6.5 | KAN Rinya Thermal resistance in free air - 55 - KAN junction to ambient STATIC CHARACTERISTICS T, = 25 C unless otherwise stated SYMBOL |PARAMETER CONDITIONS MIN. | TYP. MAX. UNIT BTA208X- wD | WWE wF lar Gate trigger current Vp =12V;l;=0.1A T2+ G+ 2 - 5 10 25 mA T2+ G- 2 ~ 5 10 25 mA T2- G- 2 - 5 10 25 mA 1, Latching current Vp = 12 V; ler = 0.1 A T2+ G+ - - 6 12 30 mA T2+ G- - - 9 18 45 mA T2- G- - - 6 12 30 mA lu Holding current =12V;Igp=O0.1A - - 6 12 30 mA Vy On-state voltage L=10A - 1.3 1.65 |.1.65 | 1.65 Vv Ver Gate trigger voltage Vp =12V31,50.1A : 0.7 1.5 Vv Vp = 400 V; I, = 0.1 A; 0.25 | 0.4 - Vv | Off-state leakage current = ; - 0.1 0.5 m. Te Ve DYNAMIC CHARACTERISTICS T, = 25 C unless otherwise stated SYMBOL |PARAMETER CONDITIONS MIN. TYP. | MAX. | UNIT BTA208xX- |...0 se E woe F dV,/dt Critical rate of rise of Vom = 67% Voamenaxy? 10 20) 50 - - Vins off-state voltage T, = 125 C; exponential waveform; gate open circuit eof dt Critical rate of change of vou = = 400 V; T, = 125 C; 1.8 2.5) 3.5 - - A/ms commutating current ws) = 8 A; de at = = 20vius; gate open circuit tot Gate controlled tum-on Ing = 12 A; Vo = Vormynax) - i 2 - us time le= = 0.1 A; di,/dt = 5 A/us 2 Device does not trigger in the T2-, G+ quadrant. September 1997 483 Rev 1.000