BAT 18 Silicon RF Switching Diode BAT 18 ... Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance Type Marking Ordering Code Pin Configuration Package1) BAT 18 A2 Q62702-A787 SOT 23 BAT 18-04 AU Q62702-A938 BAT 18-05 AS Q62702-A940 BAT 18-06 AT Q62702-A942 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage VR 35 V Forward current IF 100 mA Operating and storage temperature range Top Tstg - 55 ... + 150 C Rth JA Thermal Resistance Junction - ambient 1) 2) 450 K/W For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 07.94 BAT 18... Electrical Characteristics per Diode at TA = 25 C, unless otherwise specified. Parameter Symbol Forward voltage IF = 100 mA VF Reverse current VR = 20 V VR = 20 V, TA = 60 C IR Diode capacitance VR = 20 V, f = 1 MHz Values Unit min. typ. max. - 0.38 1.2 V nA - - - - 20 200 CT - 0.75 1 pF Forward resistance IF = 5 mA, f = 100 MHz rf - 0.4 0.7 Series inductance LS - 2 - nH Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group Forward resistance rf = f (IF) f = 100 MHz 2