Semiconductor Group 1
BAT 18
Silicon RF Switching Diode BAT 18 …
●Low-loss VHF/UHF switch above 10 MHz
●Pin diode with low forward resistance
Maximum Ratings per Diode
Type Ordering CodeMarking Package1)
Pin Configuration
BAT 18 Q62702-A787A2 SOT 23
BAT 18-04 Q62702-A938AU
BAT 18-05 Q62702-A940AS
BAT 18-06 Q62702-A942AT
Parameter Symbol Values Unit
Reverse voltage VR35 V
Forward current IF100 mA
Operating and
storage temperature range Top
Tstg – 55 … + 150 ˚C
Thermal Resistance
Junction - ambient Rth JA ≤ 450 K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on alumina 15 mm ×16.7 mm ×0.7 mm.
07.94
Semiconductor Group 2
BAT 18...
Electrical Characteristics per Diode
at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol
min. typ.
UnitValues
max.
Forward voltage
I
F = 100 mA VFV– 0.38 1.2
Reverse current
VR = 20 V
VR = 20 V, TA = 60 ˚C
IRnA
–
––
–20
200
Diode capacitance
VR = 20 V, f = 1 MHz CTpF– 0.75 1
Forward resistance
I
F = 5 mA, f = 100 MHz rfΩ– 0.4 0.7
Series inductance LSnH–2–
Diode capacitance CT = f (VR)
f = 1 MHz Forward resistance rf = f (IF)
f = 100 MHz
