MSC1058.PDF 05-19-99
2N4240
ABSOLUTE MAXIMUM RATINGS:ABSOLUTE MAXIMUM RATINGS:
SYMBOL CHARACTERISTIC VALUE UNITS
VCBO*Collector-Base Voltage 500 Volts
VCEO*Collector-Emitter Voltage 300 Volts
VCER*Collector-Emitter Voltage RBE = 50ΩΩ 400 Volts
VEBO*Emitter-Base Voltage 6Volts
IC*Peak Collector Current 5Amps
IC*Continuous Collector Current 2Amps
IB*Base Current 1Amps
TSTG*Storage Temperature -65 to 200 °°C
TJ*Operating Junction Temperature -65 to 200 °°C
*Lead Temperature 1/16" from Case for 10 Sec. 235 °°C
PT*
θθ JC
Power Dissipation
TC = 25°°C
Thermal Impedance 35
5.0 Watts
°°C/W
5 Amp, 500V,
High Voltage
NPN Silicon Power
Transistors
TO-66
APPLICATIONS:
• Off-Line Inverters • Deflection Circuits
• Switching Regulators • DC-DC Converters
• Motor Controls • High Voltage Amplifiers
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
DESCRIPTION:DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200°°C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
*
Indicates JEDEC registered data.
FEATURES:
• High Voltage: 250 to 500V • High Current: 2 Amps
• Fast Switching: tf < 3µµsec. • Low VCE (SAT)
• High Power: 35 Watts
MSC1058.PDF 05-19-99
2N4240
ELECTRICAL CHARACTERISTICS:ELECTRICAL CHARACTERISTICS:
(25°°Case Temperature Unless Otherwise Noted) VALUE
SYMBOL CHARACTERISTIC TEST CONDITIONS Min. Max. Units
VCEO(sus)*Collector-Emitter
Sustaining Voltage IC = 0.2 Amp (Notes èè and 2) 300 ---- Volts
VCER(sus) Collector-Emitter
Sustaining Voltage IC = 0.2A, RBE = 50ΩΩ (Notes 1 and 2) 400 ---- Volts
ICEV* Collector Cutoff Current VCE = 450V, VBE = -1.5V ---- 2.0 mA.
ICEV*Collector Cutoff Current
TC = 150°°CVCE = 300V, VBE = -1.5V ---- 5.0 mA.
ICEO* Collector Cutoff Current VCE = 150V, IB = 0 ---- 5.0 mA.
IEB0* Emitter Cutoff Current VEB = 6V, IC = 0 ---- 0.5 mA.
hFE*DC Forward Current
Transfer Ratio
(Note 1)
IC = 0.1A, VCE = 10V
IC = 0.75A, VCE = 10V
IC = 0.75A, VCE = 2V
40
30
10
----
150
100
----
----
----
VCE(sat)*Collector-Emitter
Saturation Voltage
(Note 1)
IC = 0.75A, IB = .075A ---- 1.0 Volts
VBE(sat)*Base-Emitter Saturation
Voltage (Note 1) IC = 0.75A, IB = .075A ---- 1.8 Volts
IS/b Second-Breakdown
Collector Current (with
base forward biased)
VCE = 100V, t = 1.0sec. 0.35 ---- A
ES/b Second-Breakdown
Energy (with base
reverse biased)
VEB = 4V, RBE = 20ΩΩ, L = 100µµh50 ---- µµJ
hfe*Common-Emitter Small-
Signal Forward Current
Transfer Ratio
VCE = 10V, IC = 0.2A, f = 5 MHz 3---- ----
I hfe I*Common-Emitter Small-
Signal Forward Current
Transfer Ratio, f = 5 MHz
VCE = 10V, IC = 0.2A 3.0 ---- ----
COb Collector-Base
Capacitance VCB = 10V, IE = 0, f = 1.0MHz ---- 120 pf
tr* Rise Time IC = .75A, IB2 = .075A ---- .05 µµsec.
ts* Storage Time IC = .75A, IB1 = IB2 = .075A ---- 6.0 µµsec.
tf* Fall Time IC = .75A, IB1 = IB2 = .075A ---- 3.0 µµsec.
Note 1: Pulse Test: Pulse width = 300µµSec., Rep. Rate 60Hz.
Note 2: Caution - Do not use Curve Tracer.
* Indicates JEDEC registered data.
MSC1058.PDF 05-19-99
2N4240
PACKAGE MECHANICAL DATA:PACKAGE MECHANICAL DATA:
NOTE: DIMENSIONS IN [ ] = MILLIMETERS
.050 [1.27]
.075 [1.91]
.028 [0.71]
.034 [0.86]
.958 [24.33]
.962 [24.43]
.142 [3.61]
.152 [3.86]
.620 [15.75] MAX
R.350 [8.89] MAX
.470 [11.94]
.500 [12.70]
.250 [6.35]
.340 [8.64] .190 [4.83]
.210 [5.33]
.095 [2.41]
.105 [2.67]
.570 [14.48]
.590 [14.99]
.360 [9.14] MIN
R.145 [3.68] MAX
.050 [1.27] MAX
SEATING PLANE
2 1
