NTE5555 Silicon Controlled Rectifier (SCR) 820 Amp, TO200AB Absolute Maximum Ratings: (TJ = +125C unless otherwise specified) Repetitive Peak Voltages, VRRM, VDRM, VDSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Non-Repetitive Peak Reverse Blocking Voltage, VRSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Average On-State Current (Half Sine Wave), IT(AV) Ths = +55C (Double Side Cooled) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 735A RMS On-State Current (Ths = +25C, Double Side Cooled), IT(RMS) . . . . . . . . . . . . . . . . . . . . . 820A Continuous On-State Current (Ths = +25C, Double Side Cooled), IT . . . . . . . . . . . . . . . . . . . 1230A Peak One-Cycle Surge (10ms duration, 60% VRRM re-applied), ITSM (1) . . . . . . . . . . . . . . . . . 7600A Non-Repetitive On-State Current (10ms duration, VR 10V), ITSM (2) . . . . . . . . . . . . . . . . . . . 8360A Peak Forward Gate Current (Anode positive with respect to cathode), IFGM . . . . . . . . . . . . . . . . 20A Peak Forward Gate Voltage (Anode positive with respect to cathode), VFGM . . . . . . . . . . . . . . . 18V Peak Reverse Gate Voltage, VRGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Average Gate Power, PG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Peak Gate Power (100s pulse width), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Rate of Rise of Off-State Voltage (To 80% VDRM gate open-circuit), dv/dt . . . . . . . . . . . . . 200V/s Rate of Rise of On-State Current, di/dt (Gate drive 20V, 20 with tr 1s, anode voltage 80% VDRM) Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500A/s Non-Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000A/s Operating Temperature Range, Ths . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Thermal Resistance, Junction-to-Heatsink, Rth(j-hs) (For a device with a maximum forward voltage drop characteristic) Double Side Cooled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.05C/W Single Side Cooled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1C/W Peak On-State Voltage (ITM = 1550A), VTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.78V Forward Conduction Threshold Voltage, VO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.03V Forward Conduction Slope Resistance, r . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.483m Repetitive Peak Off-State Current (At VDRM), IDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA Repetitive Peak Reverse Current (At VRRM), IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA Maximum Gate Current (VA = 6V, IA = 1A, TJ = +25C), IGT . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Maximum Gate Voltage (VA = 6V, IA = 1A, TJ = +25C), VGT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Maximum Holding Current (VA = 6V, IA = 1A, TJ = +25C), IH . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Maximum Gate Voltage Which Will Not Trigger Any Device, VGD . . . . . . . . . . . . . . . . . . . . . . . 0.25V Rev. 12-11 .190 (4.8) 25 1.650 (42.0) Dia 1.102 (28.0) .140 x .075 (3.5 x 1.8) Dia (2 Holes) .012 (0.3) .990 (25.1) Dia Cathode .590 (15.0) Gate Terminal Anode .990 (25.1) Dia