NTE5555 - NTE ELECTRONICS, INC. - Datasheet.Directory

NTE5555

Silicon Controlled Rectifier (SCR)

820 Amp, TO200AB

Absolute Maximum Ratings: (TJ = +125°C unless otherwise specified)

Repetitive Peak Voltages, VRRM, VDRM, VDSM 600V.........................................

Non−Repetitive Peak Reverse Blocking Voltage, VRSM 700V.................................

Average On−State Current (Half Sine Wave), IT(AV)

Ths = +55°C (Double Side Cooled) 735A............................................

RMS On−State Current (Ths = +25°C, Double Side Cooled), IT(RMS) 820A.....................

Continuous On−State Current (Ths = +25°C, Double Side Cooled), IT1230A...................

Peak One−Cycle Surge (10ms duration, 60% VRRM re−applied), ITSM (1) 7600A.................

Non−Repetitive On−State Current (10ms duration, VR ≤ 10V), ITSM (2) 8360A...................

Peak Forward Gate Current (Anode positive with respect to cathode), IFGM 20A................

Peak Forward Gate Voltage (Anode positive with respect to cathode), VFGM 18V...............

Peak Reverse Gate Voltage, VRGM 5V....................................................

Average Gate Power, PG2W............................................................

Peak Gate Power (100μs pulse width), PGM 100W.........................................

Rate of Rise of Off−State Voltage (To 80% VDRM gate open−circuit), dv/dt 200V/μs.............

Rate of Rise of On−State Current, di/dt

(Gate drive 20V, 20Ω with tr ≤ 1μs, anode voltage ≤ 80% VDRM)

Repetitive 500A/μs............................................................

Non−Repetitive 1000A/μs......................................................

Operating Temperature Range, Ths −40° to +125°C.........................................

Storage Temperature Range, Tstg −40° to +150°C..........................................

Thermal Resistance, Junction−to−Heatsink, Rth(j−hs)

(For a device with a maximum forward voltage drop characteristic)

Double Side Cooled 0.05°C/W..................................................

Single Side Cooled 0.1°C/W....................................................

Peak On−State Voltage (ITM = 1550A), VTM 1.78V..........................................

Forward Conduction Threshold Voltage, VO1.03V..........................................

Forward Conduction Slope Resistance, r 0.483mΩ.........................................

Repetitive Peak Off−State Current (At VDRM), IDRM 40mA...................................

Repetitive Peak Reverse Current (At VRRM), IRRM 40mA....................................

Maximum Gate Current (VA = 6V, IA = 1A, TJ = +25°C), IGT 150mA...........................

Maximum Gate Voltage (VA = 6V, IA = 1A, TJ = +25°C), VGT 3V..............................

Maximum Holding Current (VA = 6V, IA = 1A, TJ = +25°C), IH500mA..........................

Maximum Gate Voltage Which Will Not Trigger Any Device, VGD 0.25V.......................

Rev. 12−11