CLA 50 E 1200 HB V RRM = I T(AV)M = I T(RMS) = High Efficiency Thyristor Single Thyristor 1200 V 50 A 79 A Part number 2 CLA 50 E 1200 HB 1 3 Backside: anode Features / Advantages: Applications: Package: Thyristor for line frequency Planar passivated chip Long-term stability Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Housing: TO-247 rIndustry standard outline rEpoxy meets UL 94V-0 rRoHS compliant Ratings Conditions Symbol Definition VRSM/DSM max. non-repetitive reverse/forward blocking voltage VRRM/DRM max. repetitive reverse/forward blocking voltage I R/D reverse current, drain current VT forward voltage drop min. typ. 1300 TVJ = 25C 1200 V TVJ = 25C 50 A VR/D = 1200 V TVJ = 125 C 4 mA TVJ = 25C 1.32 V 1.60 V TVJ = 125 C 1.27 V IT = IT = 50 A 50 A I T = 100 A I T(AV)M average forward current TC = 125 C I T(RMS) RMS forward current 180 sine threshold voltage rT slope resistance for power loss calculation only R thJC thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation PGM max. gate power dissipation 1.65 V T VJ = 150 C 50 A 79 A TVJ = 150 C 0.88 V 7.7 m 0.25 K/W 150 C TC = 25C 500 W T C = 150 C 10 W -40 t P = 30 s t P = 300 s PGAV average gate power dissipation I TSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. V VR/D = 1200 V I T = 100 A VT0 Unit max. TVJ = 25C 1 W 0.5 W t = 10 ms; (50 Hz), sine TVJ = 45 C 550 A t = 8,3 ms; (60 Hz), sine VR = 0 V 595 A t = 10 ms; (50 Hz), sine TVJ = 150 C 470 A A t = 8,3 ms; (60 Hz), sine VR = 0 V 505 t = 10 ms; (50 Hz), sine TVJ = 45 C 1.52 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 1.48 kAs TVJ = 150 C 1.11 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25C Data according to IEC 60747and per diode unless otherwise specified (c) 2010 IXYS all rights reserved http://store.iiic.cc/ 1.06 kAs 25 pF 20101215e CLA 50 E 1200 HB Ratings Symbol Definition Conditions (di/dt) cr critical rate of rise of current TVJ = 150 C min. repetitive, IT = typ. 40 A max. Unit 150 A/s f = 50 Hz; tP = 200 s I (dv/dt) cr critical rate of rise of voltage VGT gate trigger voltage = 0.3 A; di /dt = 0.3 A/s VD = VDRM non-repetitive, I T = 50 A 500 A/s VD = VDRM TVJ = 150 C 1000 V/s TVJ = 25 C 1.5 V TVJ = -40 C 1.6 V TVJ = 25 C 50 mA TVJ = -40 C 80 mA TVJ = 150 C 0.2 V 3 mA TVJ = 25 C 125 mA TVJ = 25 C 100 mA TVJ = 25 C 2 s R GK = ; method 1 (linear voltage rise) I GT gate trigger current VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = 6 V VD = 6 V VD = VDRM t p = 10 s I = 0.3 A; di /dt = IH holding current VD = 6 V R GK = t gd gate controlled delay time VD = 1/2 VDRM I tq turn-off time = 0.3 A; di /dt = 0.3 A/s 0.3 A/s VR = 100 V; I T = 33 A TVJ = 150 C 200 s VD = VDRM ; t p = 200 s di/dt = 10 A/s; dv/dt = 20 V/s IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per diode unless otherwise specified (c) 2010 IXYS all rights reserved http://store.iiic.cc/ 20101215e CLA 50 E 1200 HB Ratings Symbol Definition Conditions I RMS RMS current per terminal R thCH thermal resistance case to heatsink Tstg storage temperature min. typ. max. Unit 70 0.25 -55 Weight K/W 150 6 MD mounting torque FC mounting force with clip A C g 0.8 1.2 Nm 20 120 N Part number C L A 50 E 1200 HB Product Marking Logo Marking on product DateCode Assembly Code Ordering Standard = = = = = = = Thyristor (SCR) High Efficiency Thyristor (up to 1200 V) Current Rating [A] Single Part Reverse Voltage [V] TO-247AD (3) abcdef YYWW XXXXXX Part Name CLA 50 E 1200 HB Similar Part CLA50E1200TC IXYS reserves the right to change limits, conditions and dimensions. Marking on Product CLA50E1200HB Package TO-268AA (D3Pak) Delivering Mode Tube Base Qty Code Key 30 503748 Voltage class 1200 Data according to IEC 60747and per diode unless otherwise specified (c) 2010 IXYS all rights reserved http://store.iiic.cc/ 20101215e CLA 50 E 1200 HB Outlines TO-247 A E A2 O P1 OP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 b4 3x b C A1 2x e IXYS reserves the right to change limits, conditions and dimensions. Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 OP Q S b b2 b4 c D1 D2 E1 O P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 Data according to IEC 60747and per diode unless otherwise specified (c) 2010 IXYS all rights reserved http://store.iiic.cc/ 20101215e CLA 50 E 1200 HB 160 900 140 800 10000 VR = 0 V TVJ = 45C 700 120 600 100 I2t ITSM 500 IT TVJ = 45C 1000 80 400 [A] 60 [A2s] [A] 300 TVJ = 125C TVJ = 125C 40 200 TVJ = 125C 20 100 TVJ = 25C 0 0.0 0 0.5 1.0 1.5 2.0 50 Hz, 80% VRRM 2.5 0.01 100 0.1 VT [V] 1 1 Fig. 1 Forward characteristics 80 70 60 100 2 3 typ. tgd VG 1 IT(AV)M 50 Limit 40 6 [V] [A] [s] 5 4 10 TVJ = 125C 5: PGM = 1 W 6: PGM = 10 W IGD, TVJ = 150C 10 0.1 100 1000 30 20 4: PGAV = 0.5 W 10 5 6 7 8 910 2 1000 1 4 Fig. 3 I t versus time (1-10 ms) TVJ = 125C TVJ = 25C TVJ = -40C 1 3 t [ms] Fig. 2 Surge overload current 10 1: IGT, 2: IGT, 3: IGT, 2 t [s] 1 10 10000 0 100 1000 0 20 40 60 80 100 120 140 160 TC [C] IG [mA] IG [mA] Fig. 4 Gate trigger characteristics Fig. 5 Gate controlled delay time tgd 0.3 Fig. 6 Max. forward current at case temperature Ri ti 0.0075 0.0011 0.017 0.2 ZthJC 0.0019 0.057 0.0115 0.158 0.12 0.0105 0.5 [K/W] 0.1 0.0 0.001 0.01 0.1 1 10 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per diode unless otherwise specified (c) 2010 IXYS all rights reserved http://store.iiic.cc/ 20101215e