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Preliminary
Data Sheet
NE461M02 / 2SC5337
NPN Silicon RF Transistor for High-Frequency
Low Distortion Amplifier 4-Pin Power Minimold
FEATURES
•Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA
•Low noise
NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz
NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz
•4-pin power minimold package with improved gain from the NE46134 / 2SC4536
ORDERING INFORMATION
mroF gniylppuS ytitnauQ egakcaP rebmuN redrO rebmuN traP
esac enizagaM• )leer noN( scp 52
NE461M02-AZ
2SC5337-AZ
NE461M02
2SC5337
NE461M02-T1
2SC5337-T1
NE461M02-T1-AZ
2SC5337-T1-AZ
4-pin power
minimold
(Pb-Free)Note
1 kpcs/reel •12 mm wide embossed taping
• Collector face the perforation side of the tape
Note Contains Lead in the part except the electrode terminals.
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 30 V
Collector to Emitter Voltage VCEO 15 V
Emitter to Base Voltage VEBO 3.0 V
I tnerruC rotcelloC C 250 mA
Total Power Dissipation Ptot Note 2.0 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg −65 to +150 °C
Note Mounted on 16 cm2× 0.7 mm (t) ceramic substrate (Copper plating)
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0047EJ0300
Rev.3.00
Sep 14, 2012
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JEITA
Part No.
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ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
scitsiretcarahC CD
Collector Cut-off Current ICBO VCB = 20 V, IE 0.5 10.0 – 0 =
μ
A
Emitter Cut-off Current IEBO VBE = 2 V, IC 0.5 30.0 – 0 =
μ
A
DC Current Gain hFE Note 1 VCE = 10 V, IC = 50 mA 60 120 200 –
scitsiretcarahC FR
Insertion Power Gain S21e2 VCE = 10 V, IC = 50 mA, f = 1 GHz 7.0 8.3 – dB
FN )1( erugiF esioN Note 2 VCE = 10 V, IC = 50 mA, f = 500 MHz – 1.5 3.5 dB
FN )2( erugiF esioN Note 2 VCE = 10 V, IC = 50 mA, f = 1 GHz – 2.0 3.5 dB
2nd Order Intermoduration Distortion IM2VCE = 10 V, IC = 50 mA, RS = RL = 75 Ω,
Vin = 105 dB
μ
V/75 Ω, f1 = 190 MHz,
f2 = 90 MHz, f = f1− f2
– 59.0 – dB
3rd Order Intermoduration Distortion IM3VCE = 10 V, IC = 50 mA, RS = RL = 75 Ω,
Vin = 105 dB
μ
V/75 Ω, f1 = 190 MHz,
f2 = 200 MHz, f = 2 × f1− f2
– 82.0 – dB
Notes 1. Pulse measurement: PW ≤ 350
μ
s, Duty Cycle ≤ 2%
2. RS = RL = 50 Ω, tuned
hFE CLASSIFICATION
Rank QR/YQR QS/YQS
Marking QR QS
hFE Value 60 to 120 100 to 200
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TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)
Mounted on Ceramic Substrate
(16 cm2 × 0.7 mm (t) )
2.0
1.0
050 100 150
Total Power Dissipation Ptot (W)
Ambient Temperature TA (˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
VCE = 10 V
DC Current Gain hFE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
300
100
50
10
1000.1 1 10 1 000
f = 1 MHz
Reverse Transfer Capacitance Cre (pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
5.0
2.0
3.0
0.3
1.0
0.5
1 3 5 10 20 30
Gain Bandwidth Product fT (GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
2
3
5
0.3
0.5
1
70 10010 30 50
VCE = 10 V
f = 1 GHz
VCE = 10 V
f = 1 GHz
Collector Current IC (mA)
vs. COLLECTOR CURRENT
INSERTION POWER GAIN
Insertion Power Gain |S21e|2 (dB)
10
5
010 30 50 70 100
Collector Current IC (mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
80
100
20
40
60
010 20
IB = 0.6 mA
0.5 mA
0.4 mA
0.3 mA
0.2 mA
0.1 mA
RemarkThe graphs indicate nominal characteristics.
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VCE = 10 V
IC = 50 mA
Frequency f (GHz)
INSERTION POWER GAIN, MAG
vs. FREQUENCY
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
20
10
00.2 0.4 0.6 0.8 1.0 1.4 2.0
MAG
|S21e|2
7
6
5
4
3
2
1
05 10 20 50 100
Collector Current IC (mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
Noise Figure NF (dB)
VCE = 10 V
f = 1 GHz
70
80
60
50
40
30
10 50 100 300
Collector Current IC (mA)
IM3, IM2+, IM2– vs.
COLLECTOR CURRENT
3rd Order Intermodulation Distortion IM3 (dB)
2nd Order Intermodulation Distortion (+) IM2+ (dB)
2nd Order Intermodulation Distortion (–) IM2– (dB)
IM2–
IM2+
IM3
V
CE
= 10 V
IM
3
: V
in
= 110 dB V/75 Ω 2 tone each
f = 2 × 190 – 200 MHz
IM
2+
: V
in
= 105 dB V/75 Ω 2 tone each
f = 90 + 100 MHz
IM
2–
: V
in
= 105 dB V/75 Ω 2 tone each
f = 190 – 90 MHz
μ
μ
μ
RemarkThe graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[Products] → [RF Devices] → [Device Parameters]
URL http://www.renesas.com/products/microwave/
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PACKAGE DIMENSIONS
4-PIN POWER MINIMOLD (UNIT: mm)
1.5±0.1
0.25±0.02
4.5±0.1
2.1
1.6
0.8
0.42±0.060.42±0.06
0.3
2.45±0.1
0.1
0.8 MIN.
3.95±0.25
0.46
±0.06
3.0
1.5
0.85
1.55
E B
C
E
E : Emitter
C: Collector
B : Base
PIN CONNECTIONS
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All trademarks and registered trademarks are the property of their respective owners.
C - 1
Revision History NE461M02 / 2SC5337 Data Sheet
Description
Rev. Date Page Summary
1.00 Mar 01, 1996 – First edition issued
2.00 Aug 28, 2001 – Second edition issued
2.10 Sep 06, 2001 – Second V1 edition issued
3.00 Sep 14, 2012 Throughout The company name is changed to Renesas Electronics Corporation.
p.1 Modification of ORDERING INFORMATION
p.2 Modification of ELECTRICAL CHARACTERIST I CS
p.2 Modification of hFE CLASSIFICATION
p.4 Modification of method for obtaining S-parameters
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