RECTRON
RECTRON
SEMICONDUCTOR
FEATURES
*
*
*
*
Power dissipation
PCM: 0.3 W(Tamb=25OC)
Collector current
ICM: 0.6 A
Collector-base voltage
V(BR)CBO: - 160 V
Operating and storage junction temperature range
TJ,Tstg: -55OC to+150OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
SOT-23
MMBT5401LT1
Dimensions in inches and (millimeters)
2006-3
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
NOTES :
Max. Instantaneous Forward Voltage at IF= 10mA
CHARACTERISTICS SYMBOL UNITS
417
-
Volts
oC/WThermal Resistance Junction to Ambient
RATINGS
Zener Current ( see Table "Characteristics" )
Max. Steady State Power Dissipation (1) @TA=25oC Derate above 25OC
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
-
PD
TJ
TSTG
RθJA
VF
VALUE
MAX.
-
-
TYP.
-
-
MIN.
UNITS
-
mW
-
300
1. Alumina=0.4*0.3*0.024in.99.5% alumina
-55 to +150
-55 to +150
oC
oC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
0.118(3.000)
0.012(0.30)
0.020(0.50)
0.003(0.080)
0.006(0.150)
0.110(2.800)
0.019(2.00)
0.071(1.80)
0.100(2.550)
0.089(2.250)
0.020(0.500)
0.012(0.300)
0.043(1.100)
0.035(0.900)
0.004(0.100)
0.000(0.000)
0.037(0.950)TYP
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
-
ELECTRICAL CHARACTERISTICS
(@TA=25OC unless otherwise noted)
OFF CHARACTERISTICS
ON CHARACTERISTICS
Chatacteristic
Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB= 0)
Collector-Base Breakdown Voltage (IC= -100µAdc, IE= 0)
Emitter-Base Breakdown Voltage (IE= -10µAdc, IC= 0)
(VCE= -120Vdc, IE=0, TA= 100OC)
Collector Cutoff Current (VCB= -120Vdc,IE=0)
DC Current Gain (IC= -1.0mAdc, VCE= -5.0Vdc)
(IC= -50mAdc, VCE= -5.0Vdc)
(IC= -10mAdc, VCE= -5.0Vdc)
V(BR)CEO -150 - Vdc
V(BR)CBO -160 - Vdc
V(BR)EBO -5.0 - Vdc
ICES
- -50
- -50
hFE
50 -
-60 240
50 -
µAdc
nAdc
Symbol Min Max Unit
Collector-Emitter Saturation Voltage (IC= -10mAdc, IB= -1.0mAdc)
(IC= -50mAdc, IB= -5.0mAdc)
Vdc
VCE(sat)
- -0.2
- -0.5
Vdc
VBE(sat)
- -1.0
- -1.0
Base-Emitter Saturation Voltage (IC= -10Adc, IB=-1.0mAdc)
(IC= -50mAdc, IB= -5.0mAdc)
RECTRON
SMALL-SIGNAL CHARACTERISTICS
fT100 300 MHz
Current-Gain-Bandwidth Product (IC= -10mAdc, VCE= -10Vdc, f= 100MHz)
Cobo - 6.0 pF
-
hfe
NF
40 200
- 8.0 dB
Output Capacitance (VCB= -10Vdc, IE= 0, f= 1.0MHz)
Noise Figure (VCE= -5.0Vdc, IC= -200µAdc, RS=10
Ω,
f= 1.0kHz)
Small-Signal Current Gain (VCE= -10Vdc, IC= -1.0mAdc, f= 1.0kHz)
RATING AND CHARACTERISTICS CURVES ( MMBT5401LT1 )
Figure 1. DC Current Gain
Figure 3. Collector Cut-Off Region
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
hFE,CURRENT GAIN
VCE,COLLECTOR-EMITTER VOLTAGE(VOLTS)
IC,COLLECTOR CURRENT (mA)
IC,COLLECTOR CURRENT (µA)
V,VOLTAGE(VOLTS)
IC,COLLECTOR CURRENT (mA)
Figure 2. Collector Saturation Region
IB,BASE CURRENT (mA)
0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Figure 4. "On" Voltages
IC,COLLECTOR CURRENT (mA)
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
RECTRON
30
100
150
200
20
TJ=125OC
70
50
VCE = -1.0V
VCE = -5.0V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
103
102
101
100
10-1
10-2
10-3
IC = 1.0 mA 10 mA 30 mA 100 mA
REVERSE
0.4
0.6
0.7
1.0
0.2
0
0.9
0.8
0.5
0.3
0.1
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
IC=ICES
VCE= 30V
25OC
-55OC
TJ=25OC
TJ=125OC
75OC
25OC
FORWARD
RECTRON
RATING AND CHARACTERISTICS CURVES ( MMBT5401LT1 )
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200
ΘV,TEMPERATURE COEFFICIENT(mV/OC)t,TIME(ns)
t,TIME(ns) C,CAPACITANCE(pF)
Figure 5.Temperature Coefficients
IC,COLLECTOR CURRENT(mA)IC,COLLECTOR CURRENT(mA)
IC,COLLECTOR CURRENT(mA)
Figure 7.Turn-On Time Figure 8.Turn-Off Time
VR,REVERSE VOLTAGE(VOLTS)
Figure 6.Capacitances
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
2.5 100
Cibo
2.0
1.5
1.0
0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
TJ = -55
O
Cto 135
O
CTJ =25
O
C
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
1000
100
200
300
500
700
10
20
30
50
70
t
r @ VCC = 120V
t
r @ VCC = 30V
t
d @ VBE(off) = 1.0 V
VCC= 120 V
2000
100
200
300
500
700
20
30
50
70
1000
tf @ VCC = 30 V
ΘVC for VCE(sat)
ΘVB for VBE(sat)
Cobo
TJ =25
O
C
IC/IB = 10
TJ =25
O
C
IC/IB = 10
t
f @ VCC = 120V
t
s @ VCC = 120V