SCF2N7219T1 JANTX2N7219 JANTXV2N7219 POWER MOSFET FOR RUGGED ENVIRONMENTS REF: MIL-PRF-19500/596 N-Channel 200 Volt < 0.180 Ohms 18 Amp TO-254AA DESCRIPTION SEMICOA's MOSFET technology is designed for rugged environments providing excellent long term reliability. SEMICOA's long heritage providing military grade technology and packaging allows these devices to be used for ground based telecommunications, vehicles, ships, weapon systems and other application where failure is not an option. FEATURES Available in JANTX and JANTXV equivalent levels RDS(ON) < 180 m Simple Drive Requirements Low Gate Charge Ease of Paralleling Hermetically Sealed Die Available ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS lD @ VGS = 10 V, TC = 25 C Continuous Drain Current 18 lD @ VGS = 10 V, TC = 100 C Continuous Drain Current 11 IDM Pulsed Drain Current (1) 72 PD@ TC = 25 C Max Power Dissipation 125 W Linear Derating Factor 1.0 W/C VGS Gate to Source Voltage 20 V EAS Single Pulse Avalanche Energy (2) 450 mJ IAR Avalanche Current (1) 18 A TJ TSTG Operating Junction Storage Temperature Range Lead Temperature Weight -55 to 150 A C 300 C 9.3 typical g For footnotes refer to the last page 333 McCormick Avenue Costa Mesa, CA 92626 714-979-1900 www.semicoa.com sales@semicoa.com Copyright 2012 Rev. 1 SCF2N7219T1 Electrical Characteristics @ TJ 25C (unless otherwise specific) PARAMETER MIN TYP MAX UNITS BVDSS Drain to Source Breakdown Voltage 200 - - V BVDSS/TJ Temperature Coefficient of Breakdown Voltage - 0.29 - V/C - - 0.18 - - 0.25 RDS(ON) Static Drain to Source On-State Resistance TEST CONDITIONS VGS = 0 V, ID = 1.0 mA Reference to 25 C, ID = 1.0 mA VGS = 10 V, ID = 11 A (4) VGS = 10 V, ID = 18 A (4) VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID = 250 A gsf Forward Transconductance 6.1 - - S() IDSS Zero Gate Voltage Drain Current - - 25 - - 1000 A VDS 15 V, IDS = 11 A (4) VDS = 160 V, VGS = 0V VDS = 200V, VGS = 0 V, Tj = 125 C IGSSF Gate to Source Leakage Forward 100 nA VGS = 20 V IGSSR Gate to Source Leakage Reverse -100 nA VGS = -20 V Qg Total Gate Charge - 60 Qgs Gate to Source Charge - 14.6 nC VGS = 10 V, ID = 18 A , VDS = 100 V Qgd Gate to Drain (Miller) Charge - 37.6 Td(on) Turn On Delay Time - - 20 Tr Rise Time - - 105 Td(off) Turn Off Delay Time - - 58 nS VDD = 100 V, ID = 18 A, VGS = 10 V, RG = 9.1 Tf Fall time - - 67 CISS Input Capacitance - - - COSS Output Capacitance - - - pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz CRSS Reverse Transfer Capacitance - - - Source-Drain Diode Rating and Characteristics PARMETER MIN TYP MAX UNITS - - 18 A ISM Pulse Source Current (Body Diode) - - 72 A VSD Diode Forward Voltage - - 1.5 V Ti = 25 C, IS = 18A, VGS = 0 V (4) - - 500 nS Ti =25 C, IF = 18 A, di/dt < 100 A/ S, VDD 50 V (4) IS Continuous Source Current (Body Diode) Trr Reverse Recovery Time TEST CONDITIONS For Footnotes refer to the last page 333 McCormick Avenue Costa Mesa, CA 92626 714-979-1900 www.semicoa.com sales@semicoa.com Copyright 2012 Rev. 1 SCF2N7219T1 TO-254AA Case Outline and Dimensions Dimensions Symbol Pin Assignment Term 1 Drain Term 2 Source Term 3 Gate Inches Millimeters Min Max Min Max BL .535 .545 13.59 13.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 12.95 14.48 LO .150 BSC 3.81 BSC LS .150 BSC 3.81 BSC MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.32 TT .040 .050 1.02 1.27 TW .535 .545 13.59 13.84 CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. Footnotes: 1. 2. 3. 4. Repetitive Rating: Pulse width limited by maximum junction temperature VDD = 50 V starting TJ = 25 C, Peak IL = 18 A ISD 18A, di/dt 150 A/S, VDD 200 V, Tj 150C, Rg = 7.5 Pulse width 300s; Duty cycle 2% Visit us at www.semicoa.com for sales and contact information. Data and specification subject to change without notice. 333 McCormick Avenue Costa Mesa, CA 92626 714-979-1900 www.semicoa.com sales@semicoa.com Copyright 2012 Rev. 1