BC847CDXV6T1H - ON SEMICONDUCTOR - Datasheet.Directory

October, 2010 − Rev. 2

1Publication Order Number:

BC847CDXV6T1/D

BC847CDXV6T1,

BC847CDXV6T5

BC848CDXV6T1,

BC848CDXV6T5

Dual General Purpose

Transistors

NPN Duals

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT−563 which is designed for

low power surface mount applications.

Features

•These are Pb−Free Devices

MAXIMUM RATINGS

Rating Symbol BC847 BC848 Unit

Collector − Emitter Voltage VCEO 45 30 V

Collector − Base Voltage VCBO 50 30 V

Emitter − Base Voltage VEBO 6.0 5.0 V

Collector Current − Continuous IC100 100 mAdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated) Symbol Max Unit

Total Device Dissipation, (Note 1)

TA = 25°C

Derate above 25°C

PD357

2.9

mW/°C

Thermal Resistance,

Junction-to-Ambient (Note 1)

RqJA 350 °C/W

Characteristic

(Both Junctions Heated) Symbol Max Unit

Total Device Dissipation, (Note 1)

TA = 25°C

Derate above 25°C

PD500

4.0

mW/°C

Thermal Resistance,

Junction-to-Ambient (Note 1)

RqJA 250 °C/W

Junction and Storage

Temperature Range

TJ, Tstg −55 to +150 °C

1. FR−4 @ Minimum Pad

SOT−563

CASE 463A

PLASTIC

(1)(2)

(3)

(4) (5) (6)

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MARKING DIAGRAMS

1x M G

BC847CDXV6T1

1x = Device Code

x = G or M

M = Date Code

G=Pb−Free Package

(Note: Microdot may be in either location)

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = 10 mA) BC847CDXV6T1

BC848CDXV6T1

V(BR)CEO

−

Collector−Emitter Breakdown Voltage

(IC = 10 mA, VEB = 0) BC847CDXV6T1

BC848CDXV6T1

V(BR)CES

−

Collector−Base Breakdown Voltage

(IC = 10 mA) BC847CDXV6T1

BC848CDXV6T1

V(BR)CBO

−

Emitter−Base Breakdown Voltage

(IE = 1.0 mA) BC847CDXV6T1

BC848CDXV6T1

V(BR)EBO

6.0

5.0

−

Collector Cutoff Current (VCB = 30 V)

(VCB = 30 V, TA = 150°C)

ICBO −

−

5.0

ON CHARACTERISTICS

DC Current Gain

(IC = 10 mA, VCE = 5.0 V)

(IC = 2.0 mA, VCE = 5.0 V)

hFE

−

420

270

520

−

800

−

Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Collector−Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)

VCE(sat) −

−

0.25

0.6

Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)

VBE(sat) −

−

0.7

0.9

−

Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)

Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)

VBE(on) 580

−

660

−

700

770

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)

fT100 − − MHz

Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo − − 4.5 pF

Noise Figure

(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW,f = 1.0 kHz, BW = 200 Hz)

− − 10

ORDERING INFORMATION

Device Specific Marking Package Shipping†

BC847CDXV6T1

SOT−563 4000 Units / Tape & Reel

BC847CDXV6T1G SOT−563

(Pb−Free)

4000 Units / Tape & Reel

BC847CDXV6T5 SOT−563 8000 Units / Tape & Reel

BC847CDXV6T5G SOT−563

(Pb−Free)

8000 Units / Tape & Reel

BC848CDXV6T1

SOT−563 4000 Units / Tape & Reel

BC848CDXV6T1G SOT−563

(Pb−Free)

4000 Units / Tape & Reel

BC848CDXV6T5 SOT−563 8000 Units / Tape & Reel

BC848CDXV6T5G SOT−563

(Pb−Free)

8000 Units / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5

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TYPICAL CHARACTERISTICS

Figure 1. DC Current Gain vs. Collector

Current

Figure 2. Collector Emitter Saturation Voltage

vs. Collector Current

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

10.10.010.001

100

300

400

600

700

900

1000

0.10.010.0010.0001

0.05

0.10

0.15

0.20

0.25

0.30

Figure 3. Base Emitter Saturation Voltage vs.

Collector Current

Figure 4. Base Emitter Voltage vs. Collector

Current

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

0.10.010.0010.0001

0.2

0.3

0.4

0.5

0.6

0.8

1.0

1.1

0.10.010.0010.0001

0.2

0.3

0.5

0.6

0.8

0.9

1.1

1.2

hFE, DC CURRENT GAIN

VCE(sat), COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

VBE(sat), BASE−EMITTER

SATURATION VOLTAGE (V)

VBE(on), BASE−EMITTER VOLTAGE (V)

200

500

800

VCE = 1 V

150°C

25°C

−55°C

IC/IB = 20

150°C

25°C

−55°C

0.7

0.9

IC/IB = 20

150°C

25°C

−55°C

0.4

0.7

1.0

VCE = 5 V

150°C

25°C

−55°C

BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5

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TYPICAL CHARACTERISTICS

Figure 5. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 6. Base−Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

1.6

1.2

2.0

2.8

2.4

1.2

1.6

2.0

0.02 1.0 10

020

0.1

0.4

0.8

VCE, COLLECTOR-EMITTER VOLTAGE (V)

VB, TEMPERATURE COEFFICIENT (mV/ C)°θ

0.2 1.0 10 100

-55°C to +125°CTA = 25°C

IC = 50 mA IC = 100 mA

IC = 200 mA

IC =

20 mA

IC =

10 mA

1.0

Figure 7. Capacitances

VR, REVERSE VOLTAGE (VOLTS)

Figure 8. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mAdc)

0.4 0.6 1.0 10 20

1.0 2.0 6.0 40

100

200

300

400

7.0

5.0

3.0

2.0

0.7 1.0 10 202.0 50

307.05.03.00.5

VCE = 10 V

TA = 25°C

C, CAPACITANCE (pF)

f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)

0.8 4.0 8.0

TA = 25°C

Cob

Cib

Figure 9. Safe Operating Area

VCE, COLLECTOR EMITTER VOLTAGE (V)

1001010.1

0.001

0.01

0.1

IC, COLLECTOR CURRENT (A)

Thermal Limit

100 mS 10 mS

1 mS

1 S

BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5

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PACKAGE DIMENSIONS

DIM MIN NOM MAX

MILLIMETERS

A0.50 0.55 0.60

b0.17 0.22 0.27

D1.50 1.60 1.70

E1.10 1.20 1.30

e0.5 BSC

L0.10 0.20 0.30

1.50 1.60 1.70

0.020 0.021 0.023

0.007 0.009 0.011

0.059 0.062 0.066

0.043 0.047 0.051

0.02 BSC

0.004 0.008 0.012

0.059 0.062 0.066

MIN NOM MAX

INCHES

SOT−563, 6 LEAD

CASE 463A−01

ISSUE F

0.08 (0.003) X

b6 5 PL

−X−

−Y−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD THICKNESS

IS THE MINIMUM THICKNESS OF BASE MATERIAL.

STYLE 1:

PIN 1. EMITTER 1

2. BASE 1

3. COLLECTOR 2

4. EMITTER 2

5. BASE 2

6. COLLECTOR 1

12 3

0.08 0.12 0.18 0.003 0.005 0.007

1.35

0.0531

0.5

0.0197 ǒmm

inchesǓ

SCALE 20:1

0.5

0.0197

1.0

0.0394

0.45

0.0177

0.3

0.0118

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5773−3850

BC847CDXV6T1/D

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